摘要:
A method of patterning a substrate using a dual-tone development process is described. The patterning method comprises forming a layer of radiation-sensitive material on a substrate, wherein the layer of radiation-sensitive material comprises a dual tone resist. Thereafter, the patterning method comprises performing one or more exposures of the layer of radiation-sensitive material to one or more patterns of radiation, wherein at least one of the one or more exposures comprises using a mask having a dual-tone mask pattern region configured for printing dual tone features and a half-tone mask pattern region configured for printing half-tone features. Furthermore, the half-tone mask pattern region is optimized for use with the dual tone resist.
摘要:
A method of making a halftone contact screen having a plurality of discrete different optical transmittance levels by making multiple relative translations of light-sensitive material under and in close contact with a ruling mask while exposures to light through the ruling mask are made between the translations. The mask comprises a thin flat plate having an array of parallel periodic equal width opaque straight bars separated by an array of parallel equal width transparent bars. In a first process, translations are normally made perpendicular to the parallel of the bars. Two-dimensional or dot halftone contact screens are made by repeating the process wherein the light-sensitive material is rotated relative to the ruling mask, in its own plane, at an angle greater than zero to the direction of the ruling bars during the first process. Using the single process creates a line halftone contact screen; adding the second process creates a dot halftone contact screen. The effective translation distance between two successive exposures is a non-integral multiple of half of the total width of a single pair of opaque and transparent bars in the ruling mask.
摘要:
Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a boundary region of a thin film transistor; etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor; removing residual photoresist via an ashing procedure; and etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, the electric leakage problem of thin film transistor due to diffusion of copper and contamination of organic stripping liquid can be eliminated.
摘要:
Negative and positive films for use in multi-color printing are prepared by a process which utilizes crystals and interstices therebetween in color-separation negatives for multi-color printing without the use of half-tone screens. Exposure through masks of controlled density ranges relative to the color-separation negatives and positives prepared from the color original result in final negatives and positives as well as duplication negatives and positives which can be utilized in the multi-color printing process.