公开(公告)号：US08299462B2

公开(公告)日：2012-10-30

申请号：US13280556

申请日：2011-10-25

申请人： Cancheepuram V. Srividya ,  Noel Rocklein ,  John Vernon ,  Jeff Nelson ,  F. Daniel Gealy ,  David Korn

发明人： Cancheepuram V. Srividya ,  Noel Rocklein ,  John Vernon ,  Jeff Nelson ,  F. Daniel Gealy ,  David Korn

IPC分类号： H01L29/12

CPC分类号： C23C16/405 ,  C23C16/40 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.

摘要翻译： 本发明包括来自ALD型方法的介电模式，其中使用两种或更多种不同的前体与一种或多种反应物形成电介质材料。 在特定方面，前体是由铪前体制成的材料的铝和铪和/或锆，氧化铪主要是四方晶相。

公开(公告)号：US20120098093A1

公开(公告)日：2012-04-26

申请号：US13338527

申请日：2011-12-28

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L29/02

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US08105896B2

公开(公告)日：2012-01-31

申请号：US12480496

申请日：2009-06-08

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US07863198B2

公开(公告)日：2011-01-04

申请号：US11419173

申请日：2006-05-18

申请人： M. Noel Rocklein ,  F. Daniel Gealy

发明人： M. Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28562 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L28/91

摘要： Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces.

摘要翻译： 示出了用于控制半导体结构中的膜的生长速率的方法和装置。 化学气相沉积方法和装置包括使用选择性地改变沿着表面的沉积速率的反应抑制剂。 一种具体方法包括原子层沉积。 所示的一种方法提供了诸如沟槽板电容器中的沟槽的特征的高阶覆盖。 还示出了提供均匀间歇反应堆层厚度的方法和装置。 还示出了用于形成具有高组成控制的合金层的方法。 还示出了选择性地控制生长速率以仅在所选表面上提供生长的方法。

公开(公告)号：US07759717B2

公开(公告)日：2010-07-20

申请号：US11364383

申请日：2006-02-27

申请人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

IPC分类号： H01L29/76

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A capacitor includes a first capacitor electrode which includes conductive metal. A second capacitor electrode is spaced from the first capacitor electrode. A capacitor dielectric region is received between the first and second capacitor electrodes. Such region comprising a first portion oxide material of a first density over the first capacitor electrode, and a second portion oxide material of a second density received over the first portion. The oxide-comprising material of the first portion and the oxide-comprising material of the second portion are the same in chemical composition and the second density is greater than the first density.

摘要翻译： 电容器包括包括导电金属的第一电容器电极。 第二电容器电极与第一电容器电极间隔开。 电容器电介质区域被接收在第一和第二电容器电极之间。 这种区域包括在第一电容器电极上的第一密度的第一部分氧化物材料和在第一部分上接收的第二密度的第二部分氧化物材料。 第一部分的含氧化物材料和第二部分的含氧化物的材料在化学组成上相同，第二密度大于第一密度。

公开(公告)号：US07687844B2

公开(公告)日：2010-03-30

申请号：US12052124

申请日：2008-03-20

申请人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

发明人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

IPC分类号： H01L27/108

CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

公开(公告)号：US07439564B2

公开(公告)日：2008-10-21

申请号：US11123380

申请日：2005-05-05

申请人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

发明人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

IPC分类号： H01L27/108

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US07378354B2

公开(公告)日：2008-05-27

申请号：US11414407

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L21/302

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

公开(公告)号：US07368382B2

公开(公告)日：2008-05-06

申请号：US11413438

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

公开(公告)号：US20070269982A1

公开(公告)日：2007-11-22

申请号：US11419173

申请日：2006-05-18

申请人： M. Noel Rocklein ,  F. Daniel Gealy

发明人： M. Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/44 ,  H01L21/76 ,  B05D3/00

CPC分类号： H01L21/28562 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L28/91

摘要： Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces.

摘要翻译： 示出了用于控制半导体结构中的膜的生长速率的方法和装置。 化学气相沉积方法和装置包括使用选择性地改变沿着表面的沉积速率的反应抑制剂。 一种具体方法包括原子层沉积。 所示的一种方法提供了诸如沟槽板电容器中的沟槽的特征的高阶覆盖。 还示出了提供均匀间歇反应堆层厚度的方法和装置。 还示出了用于形成具有高组成控制的合金层的方法。 还示出了选择性地控制生长速率以仅在所选表面上提供生长的方法。