公开(公告)号：US09001578B2

公开(公告)日：2015-04-07

申请号：US13610433

申请日：2012-09-11

申请人： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney Virgil Bowman

发明人： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney Virgil Bowman

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/16 ,  G11C11/56 ,  G11C16/14

CPC分类号： G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/16 ,  G11C2013/0073 ,  G11C2211/5646

摘要： Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.

摘要翻译： 用于管理存储器中的数据的装置和方法，诸如但不限于闪存阵列。 根据一些实施例，通过切换擦除状态值来对存储器单元块执行软擦除，而不影响块中的单元的写入状态。 随后使用响应于切换的擦除状态值确定的写入极性方向用一组数据覆盖存储器单元。

公开(公告)号：US20140332709A1

公开(公告)日：2014-11-13

申请号：US14367418

申请日：2012-08-16

申请人： Wei Tian ,  Tengfei Zhai ,  Tao Ji

发明人： Wei Tian ,  Tengfei Zhai ,  Tao Ji

IPC分类号： A62D1/06 ,  A62D1/00

CPC分类号： A62D1/06 ,  A62D1/0007 ,  C06B23/04

摘要： A metal-carbonyl-containing fire extinguishing composition comprises metal carbonyl complexes. The fire extinguishing composition uses a pyrotechnic agent as a heat source and a power source. A high temperature in combustion of the pyrotechnic agent enables the fire extinguishing composition to decompose or react under heat; produced fire extinguishing substances are sprayed out together with the pyrotechnic agent, thereby achieving a fire extinguishing objective. In the fire extinguishing composition, by selecting preferable components and optimizing contents of the components, an optimum formula of the fire extinguishing composition is determined, thereby greatly improving the efficacy of the fire extinguishing composition. In addition, efficacies of the components in the fire extinguishing composition are fully utilized, which improves an effective utilization rate of the fire extinguishing composition.

摘要翻译： 含羰基金属的灭火组合物包含羰基金属络合物。 灭火剂组合物使用烟火剂作为热源和电源。 烟火剂的高温燃烧使得灭火组合物在加热下分解或反应; 生产的灭火物质与烟火剂一起喷洒，从而达到灭火目的。 在灭火组合物中，通过选择优选成分并优化成分的含量，确定灭火剂组合物的最佳配方，从而大大提高灭火组合物的功效。 此外，充分利用灭火组合物中的组分的功效，这提高了灭火组合物的有效利用率。

公开(公告)号：US20120257447A1

公开(公告)日：2012-10-11

申请号：US13527845

申请日：2012-06-20

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/16

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US20120199936A1

公开(公告)日：2012-08-09

申请号：US13445351

申请日：2012-04-12

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/868

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US08198181B1

公开(公告)日：2012-06-12

申请号：US13400364

申请日：2012-02-20

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L21/425

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US20110007551A1

公开(公告)日：2011-01-13

申请号：US12502222

申请日：2009-07-13

申请人： Wei Tian ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Haiwen Xi ,  Michael Xuefei Tang ,  Brian Lee

发明人： Wei Tian ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Haiwen Xi ,  Michael Xuefei Tang ,  Brian Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/51 ,  G11C2213/76 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246

摘要： A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.

摘要翻译： 公开了一种包括非欧姆选择层的非易失性存储单元和相关联的方法。 根据一些实施例，非易失性存储器单元由耦合到非欧姆选择层的电阻感测元件（RSE）组成。 响应于大于或等于预定阈值的电流，选择层被配置为从第一电阻状态转变到第二电阻状态。

公开(公告)号：US20110006275A1

公开(公告)日：2011-01-13

申请号：US12501533

申请日：2009-07-13

申请人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

发明人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

IPC分类号： H01L45/00 ,  H01L21/20

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608

摘要： A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

摘要翻译： 电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。 第一和第二电极由电阻式感测存储器堆分隔开。 电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。 方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。

公开(公告)号：US07826256B2

公开(公告)日：2010-11-02

申请号：US12239882

申请日：2008-09-29

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C7/00

CPC分类号： G11C11/161

摘要： Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.

摘要翻译： 公开了具有补偿元件的自转转矩存储器。 自旋转移转矩存储单元包括合成反铁磁参考元件，合成反铁磁补偿元件，合成反铁磁参考元件和合成反铁磁补偿元件之间的自由磁性层，以及将绝缘和非磁性隧道势垒层分离 来自合成反铁磁参考元件的自由磁性层。 自由磁性层具有大于1100emu / cc的饱和力矩值。

公开(公告)号：US20100195380A1

公开(公告)日：2010-08-05

申请号：US12364589

申请日：2009-02-03

申请人： Xiaobin Wang ,  Yong Lu ,  Haiwen Xi ,  Yuankai Zheng ,  Yiran Chen ,  Harry Hongyue Liu ,  Dimitar Dimitrov ,  Wei Tian ,  Brian Seungwhan Lee

发明人： Xiaobin Wang ,  Yong Lu ,  Haiwen Xi ,  Yuankai Zheng ,  Yiran Chen ,  Harry Hongyue Liu ,  Dimitar Dimitrov ,  Wei Tian ,  Brian Seungwhan Lee

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1693 ,  H01F10/3254 ,  H01F10/3286

摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.

摘要翻译： 一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。 在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

公开(公告)号：US20100193761A1

公开(公告)日：2010-08-05

申请号：US12362640

申请日：2009-01-30

申请人： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

发明人： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

摘要： Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

摘要翻译： 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。