摘要:
A method is available for forming a solder film on a metallic surface such as a pad of a metallic circuit of a printed circuit board and a lead frame of electronic parts which is capable of forming a precise and fine pattern. The method comprises selectively imparting tackiness to only a predetermined part of the metallic surface by use of a tacky layer-forming solution, adhering a powdered solder to the resulting tacky part, and then melting the solder by heating to thereby form a solder film.
摘要:
The distributed index of refraction type optical element consists of an element composing a glass forming oxide and a cation composing a glass modifying oxide, and has therein a distributed index of refraction imparted by a gradient of density of the element and a distributed index of refraction imparted by a gradient of density of the cation which are completely independent of each other. This optical element permits controlling chromatic aberration in various ways and has various favorable optical characteristics. The method of making the optical element comprises a first step for imparting a first distributed index of refraction to a glass body material by forming a gradient of density of the element and a second step for imparting a second distributed index of refraction to the glass body material by forming a gradient of density of the cation.
摘要:
In accordance with the present invention, the dopant within one gradient index optical element has two independent concentration distributions. Particularly to use the present invention to obtain a gradient index optical element having an excellent chromatic aberration correction ability, it is only needed to make such dopant distributions as shown in the previously stated Japanese Patent Application No. 280897/1989. However, as to the doping of a dopant into a porous body, there is a limit in the amount which can be doped. This is a disadvantage of the molecular stuffing method, but the reason for this is that the dopant must be supplied into the holes as a solution and it is largely restricted by the solubility of the dopant in the solvent. In addition, since the intra-hole fixing of the dopant depends on the solubility difference by temperature or that by solvent exchange, it is further restricted. For this, the latter process which is an application of the molecular stuffing method preferably takes the distribution that has less doping amount.Accordingly, a large concentration distribution must be provided to the dopant in the preceding process. For that, the preceding process is desirably a gel which has sufficiently large concentration gradient by the sol-gel method. However, the sol-gel method also has a defect, in which the distribution provision relies on the elution of the dopant metal, and thus a convex distribution is easier to produce in principle.In view of the foregoing, it is the most effective that the concentration gradient of the first dopant is formed in a convex shape by the sol-gel method using alcoxide as the raw material for retreiving the first dopant, and that the concentration gradient of the second dopant is formed in a concave shape by an application of the molecular stuffing method.
摘要:
A composition for oral cavity and skin which contains an antibacterial agent and does not have adverse side effects due to steroids, is provided.The composition contains 0.01 to 4.5% by mass of at least one selected from the group consisting of an antibacterial agent, an antiviral agent, an anti-HIV agent, a non-nucleic acid-based reverse transcriptase inhibitor, an anticancer agent for external use and a disinfectant; 0.01 to 4.5% by mass of a non-steroidal anti-inflammatory agent; 0.001 to 4.5% by mass of a steroidal anti-inflammatory agent; and 0.001 to 10% by mass of a highly water-absorbent polymer or a cellulose derivative.
摘要:
A nonvolatile memory includes circuits each having first control transistors, memory transistors, second control transistors and memory transistors repeatedly connected in series in sequence. Inversion layers are formed in the direction intersecting the serial direction with turning on of the control transistors. A selection circuit selects a connection of the inversion layer placed under the first control transistor and its corresponding read/write circuit. The control transistors placed on both sides adjacent to the memory transistor are turned on to perform reading. The first control transistors placed on both sides of the second control transistor as viewed from side to side are turned on to perform writing into the other of the right and left memory transistors via one of the right and left memory transistors. The selection circuit connects the read/write circuit and the inversion layer in such a manner that the same read/write circuit is used in reading and writing for the same memory transistor.
摘要:
A normally open hydraulic control valve includes: a linear solenoid unit; a spool driven by an output force of the linear solenoid unit to move forward; a valve body in which the spool is fitted; and a return spring for biasing the spool in a retreating direction. The valve body includes: a reaction force oil chamber for introducing hydraulic pressure, which presses the spool in a direction against a biasing force of the return spring, from the output port; and a damper oil chamber which suppresses vibration of the spool. The damper oil chamber is adjacent to the reaction force oil chamber with the third land portion of the spool therebetween. A slide gap which leaks and supplies oil from the reaction force oil chamber to the damper oil chamber is provided between the third land portion and the valve body. Thus, it is possible to quickly supply the oil to the damper oil chamber at the early stage of the operation without restriction on the arrangement, and to prevent delay in operation of the damper oil chamber.
摘要:
An electrically programmable and erasable nonvolatile semiconductor memory such as a flash memory is designed into a configuration in which, when a cutoff of the power supply occurs in the course of a write or erase operation carried out on a memory cell employed in the non-volatile semiconductor memory, the operation currently being executed is discontinued and a write-back operation is carried out to change a threshold voltage of the memory cell in the reversed direction. In addition, the configuration also allows the number of charge-pump stages in an internal power-supply configuration to be changed in accordance with the level of a power-supply voltage so as to make the write-back operation correctly executable. As a result, no memory cells are put in deplete state even in the event of a power-supply cutoff in the course of a write or erase operation.
摘要:
A normally open hydraulic control valve includes: a linear solenoid unit; a spool driven by an output force of the linear solenoid unit to move forward; a valve body in which the spool is fitted; and a return spring for biasing the spool in a retreating direction. The valve body includes: a reaction force oil chamber for introducing hydraulic pressure, which presses the spool in a direction against a biasing force of the return spring, from the output port; and a damper oil chamber which suppresses vibration of the spool. The damper oil chamber is adjacent to the reaction force oil chamber with the third land portion of the spool therebetween. A slide gap which leaks and supplies oil from the reaction force oil chamber to the damper oil chamber is provided between the third land portion and the valve body. Thus, it is possible to quickly supply the oil to the damper oil chamber at the early stage of the operation without restriction on the arrangement, and to prevent delay in operation of the damper oil chamber.
摘要:
In order to manufacture a discharging roller which discharges a recording medium from a recording apparatus, there are a first die formed with a first recess extending in an axial direction of a shaft portion of the discharging roller, and a second die formed with a second recess extending in the axial direction. The first die and the second die are combined such that the first recess and the second recess face to form a continuous cavity. Synthetic resin is injected into the cavity to mold a bore portion of the shaft portion.
摘要:
A control of a flash memory includes control for supplying a pulse-shaped voltage to each of non-volatile memory cells until a threshold voltage of the non-volatile memory cell having a first threshold voltage is changed to a second threshold voltage. The control involves a first write mode (coarse write) in which the amount of change in threshold voltage of each non-volatile memory cell, which is varied each time the pulse-shaped voltage is applied, is relatively rendered high, and a second write mode (high-accuracy write) in which the amount of change in threshold voltage thereof is relatively rendered low. As compared with the high-accuracy mode, the number of pulses required to change the threshold voltage of each memory cell is smaller than that in the coarse write mode. Therefore, the number of verify operations at the time that the coarse write mode is used, is small and hence the entire write operation can be speeded up.