摘要:
A system and method for patterning metal oxide materials in a semiconductor structure. The method comprises a first step of depositing a layer of metal oxide material over a substrate. Then, a patterned mask layer is formed over the metal oxide layer leaving one or more first regions of the metal oxide layer exposed. The exposed first regions of the metal oxide layer are then subjected to an energetic particle bombardment process to thereby damage the first regions of the metal oxide layer. The exposed and damaged first regions of the metal oxide layer are then removed by a chemical etch. Advantageously, the system and method is implemented to provide high-k dielectric materials in small-scale semiconductor devices. Besides using the ion implantation damage (I/I damage) plus wet etch technique to metal oxides (including metal oxides not previously etchable by wet methods), other damage methods including lower energy, plasma-based ion bombardment, may be implemented. Plasma-based ion bombardment typically uses simpler and cheaper tooling, and results in less collateral damage to underlying structures as the damage profile can be more easily localized to the depth of the thin metal oxide film.
摘要:
Systems and methods for providing MEMS devices with integrated desiccant are provided. In one embodiment, a dry composition comprising desiccant is impact sprayed onto the backplate or substrate of a MEMS device, and becomes fused with the substrate. In another embodiment, the desiccant is impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet another embodiment, the impact-sprayed surface is impregnated with the desiccant. In still another embodiment, the desiccant is combined with a suitable inorganic binder, then impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet a further embodiment, the desiccant is micronized or pulverized into a powder of desired particle size, and then impact sprayed onto a surface. Thus, the desiccant particles or powder are fused onto the target surface through the impact spraying process.
摘要:
A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
摘要:
Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.
摘要:
A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.
摘要:
A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要:
Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.
摘要:
Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
摘要:
The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.
摘要翻译:本发明提供具有高移动性和低界面电荷的栅叠层结构,以及包括其的半导体器件,即金属氧化物半导体场效应晶体管(MOSFET)。 在半导体器件中,本发明的栅极堆叠结构位于衬底和覆盖栅极导体之间。 本发明还提供一种制造本发明的栅叠层结构的方法,其中采用了高温退火工艺(大约800℃)。 本发明中使用的高温退火提供了具有大约8×10 10电荷/ cm 2或更小的电荷泵浦的界面状态密度,约250cm 2 / s以上的峰值迁移率和基本上没有 约6.0×10 12反相电荷/ cm 2以上的迁移率降解。
摘要:
A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.