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    Circuits including switches for electronic devices and methods of using the electronic devices
    52.
    发明申请
    Circuits including switches for electronic devices and methods of using the electronic devices 有权
    包括用于电子设备的开关和使用电子设备的方法的电路

    公开(公告)号：US20060119548A1

    公开(公告)日：2006-06-08

    申请号：US11003172

    申请日：2004-12-03

    Applicant: Je-Hsiung Lan ,  Gang Yu

    Inventor： Je-Hsiung Lan ,  Gang Yu

    IPC: G09G3/30

    CPC classification number: G09G3/3233 ,  G09G3/2022 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043 ,  G09G2330/021

    Abstract: A circuit for an electronic device includes a select unit, a data holder unit, an electronic component, a transistor, and a switch. The control terminal of the switch is coupled to a first select line, the first terminal of the switch is connected to a first electrode of the electronic component, and the second terminal of the switch is connected to a reference voltage line. A method of using an electronic component that includes such a circuit includes writing data to a pixel and driving the electronic component. The select unit and the switch are configured to turn on at substantially a same time, and the select unit and the switch are configured to turn off at substantially a same time during writing and driving, respectively.

    Abstract translation: 电子设备的电路包括选择单元，数据保持单元，电子元件，晶体管和开关。 开关的控制端子耦合到第一选择线，开关的第一端子连接到电子部件的第一电极，并且开关的第二端子连接到参考电压线。 使用包括这种电路的电子部件的方法包括将数据写入像素并驱动电子部件。 选择单元和开关被配置为基本上同时接通，并且选择单元和开关分别被配置为在写入和驱动期间基本上同时关闭。

    Circuit for driving an electronic component and method of operating an electronic device having the circuit
    53.
    发明申请
    Circuit for driving an electronic component and method of operating an electronic device having the circuit 有权
    用于驱动电子部件的电路和操作具有电路的电子设备的方法

    公开(公告)号：US20060012310A1

    公开(公告)日：2006-01-19

    申请号：US10893211

    申请日：2004-07-16

    Applicant: Zhining Chen ,  Matthew Stevenson ,  Gang Yu ,  Weixiao Zhang

    Inventor： Zhining Chen ,  Matthew Stevenson ,  Gang Yu ,  Weixiao Zhang

    IPC: G09G3/30

    CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2310/0256 ,  G09G2320/043 ,  Y10T29/49105

    Abstract: In one embodiment, a circuit for driving an electronic component includes a first signal line and a first switch. The first switch is connected to the first signal line and is coupled to a first terminal of the electronic component. The first switch is configured to allow a state where the first signal line electrically floats. In another embodiment, a circuit for driving an electronic component includes a first switch and a second switch. In yet another embodiment, a method for using any or all of the circuits includes electrically floating a second terminal of the electronic component, a source/drain region of a field-effect transistor, or both. In yet a further embodiment, during a first time period having a first switch at a first setting and a second switch at a second setting. During a second time period, changing the first switch, the second switch, or both to different setting(s).

    Abstract translation: 在一个实施例中，用于驱动电子部件的电路包括第一信号线和第一开关。 第一开关连接到第一信号线并且耦合到电子部件的第一端子。 第一开关被配置为允许第一信号线电浮动的状态。 在另一个实施例中，用于驱动电子部件的电路包括第一开关和第二开关。 在另一个实施例中，使用任何或所有电路的方法包括电浮动电子部件的第二端子，场效应晶体管的源极/漏极区域或两者。 在又一个实施例中，在第一时间段期间具有第一设置的第一开关和第二设置的第二开关。 在第二时间段期间，将第一开关，第二开关或两者改变为不同的设置。

    Image sensors made from organic semiconductors
    57.
    发明授权
    Image sensors made from organic semiconductors 有权
    图像传感器由有机半导体制成

    公开(公告)号：US06300612B1

    公开(公告)日：2001-10-09

    申请号：US09241657

    申请日：1999-02-02

    Applicant: Gang Yu

    Inventor： Gang Yu

    IPC: H01L2700

    CPC classification number: H01L51/424 ,  B82Y10/00 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14647 ,  H01L27/14692 ,  H01L27/307 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/4206 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549

    Abstract: Image sensors with monochromatic or multi-color response made from organic semiconductors are disclosed. The image sensors are comprised of image sensing elements (pixels) each of which comprises a thin layer (or multiple layers) of organic semiconductor(s) sandwiched between conductive electrodes. These image sensors can be integrated or hybridized with electronic or optical devices on the same substrate or on different substrates. The electrical output signals from the image sensors resulting from the input image are probed by a circuit connected to the electrodes. The spectral response of the image sensing, elements can be modified and adjusted to desired spectral profiles through material selection, through device thickness adjustment and/or through optical filtering. Several approaches for achieving red, green, and blue full-color detection are disclosed. Similar approaches can be used for multiple-band detection (wavelength multiplexing) in desired response profiles and in other selected spectral ranges.

    Abstract translation: 公开了具有由有机半导体制成的单色或多色响应的图像传感器。 图像传感器由图像感测元件（像素）组成，每个像素包括夹在导电电极之间的有机半导体的薄层（或多层）。 这些图像传感器可以与同一基底上或不同基底上的电子或光学器件集成或杂交。 来自输入图像的图像传感器的电输出信号由连接到电极的电路探测。 通过材料选择，通过器件厚度调节和/或通过光学滤波，可以修改图像感测元件的光谱响应并将其调整到所需的光谱曲线。 公开了用于实现红色，绿色和蓝色全色检测的几种方法。 类似的方法可用于期望的响应曲线和其它所选光谱范围内的多波段检测（波长复用）。

    Method of recovery of MOTFT backplane after a-Si photodiode fabrication
    59.
    发明授权
    Method of recovery of MOTFT backplane after a-Si photodiode fabrication 有权

    公开(公告)号：US09947704B1

    公开(公告)日：2018-04-17

    申请号：US15296586

    申请日：2016-10-18

    Applicant: Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

    Inventor： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

    IPC: H01L27/146

    CPC classification number: H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

    Abstract: A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY
    60.
    发明申请
    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY 有权
    具有改进的源/漏联系和可靠性的金属氧化物薄膜

    公开(公告)号：US20170033227A1

    公开(公告)日：2017-02-02

    申请号：US15225592

    申请日：2016-08-01

    Applicant: Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    Inventor： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    IPC: H01L29/786 ,  H01L23/00 ,  H01L23/31 ,  H01L29/49

    CPC classification number: H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

    Abstract translation: 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

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