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    Semiconductor memory cell and semiconductor memory device
    53.
    发明授权
    Semiconductor memory cell and semiconductor memory device 失效
    半导体存储单元和半导体存储器件

    公开(公告)号：US06787832B2

    公开(公告)日：2004-09-07

    申请号：US10395457

    申请日：2003-03-24

    申请人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

    发明人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

    IPC分类号： H01L2976

    CPC分类号： B82Y10/00 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/6684

    摘要： A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.

    摘要翻译： 半导体存储单元具有场效晶体管器件和铁电存储电容器。 场效应晶体管器件具有包含或由有机半导体材料制成的沟道区。 除了场效应晶体管器件的栅电极结构的第一栅电极之外，还提供附加的选择栅电极，通过该栅电极可以切断场效晶体管器件而不影响存储电介质，并且独立于第一栅电极 栅电极。

    Self-aligned contact doping for organic field-effect transistors and method for fabricating the transistor
    56.
    发明申请
    Self-aligned contact doping for organic field-effect transistors and method for fabricating the transistor 审中-公开
    用于有机场效应晶体管的自对准接触掺杂和用于制造晶体管的方法

    公开(公告)号：US20050042548A1

    公开(公告)日：2005-02-24

    申请号：US10680379

    申请日：2003-10-06

    申请人： Hagen Klauk ,  Guenter Schmid

    发明人： Hagen Klauk ,  Guenter Schmid

    IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/425 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40 ,  G03F7/00

    CPC分类号： H01L51/002 ,  H01L51/0021 ,  H01L51/0052 ,  H01L51/0083 ,  H01L51/0084 ,  H01L51/0097 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

    摘要： A method for doping electrically conductive organic compounds, fabricating organic field-effect transistors, and the transistor includes a dopant activated by radiation exposure, introduced into an electrically conductive organic compound, and exposed thereby, which triggers a chemical reaction to irreversibly fix the dopant in the organic compound. Such a transistor is significantly less expensive to fabricate than prior art organic field-effect transistors. Source and drain contacts and a gate electrode are next to one another on a substrate and a gate dielectric insulates the gate electrode. A distance, in which the organic semiconductor is applied directly to the substrate, is formed between gate dielectric and source or drain contact. Back-surface exposure enables production of doped regions in which the organic semiconductor has an increased electrical conductivity, while a low electrical conductivity of the organic semiconductor is retained in the channel region influenced by the field of the gate electrode.

    摘要翻译： 用于掺杂导电有机化合物，制造有机场效应晶体管和晶体管的方法包括通过放射线暴露而被引入导电有机化合物中并由此暴露的掺杂剂，其引发化学反应以将掺杂剂不可逆地固定 有机化合物。 这种晶体管比现有技术的有机场效应晶体管制造成本要低得多。 源极和漏极接触点和栅极电极在衬底上彼此相邻并且栅极介质绝缘栅电极。 将有机半导体直接施加到基板的距离形成在栅极电介质和源极或漏极接触之间。 背面曝光能够产生其中有机半导体具有增加的导电性的掺杂区域，而有机半导体的低电导率保留在受栅极电场的场影响的沟道区中。

    METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION
    57.
    发明授权
    METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION 有权
    在有机场效应晶体管中减少接触电阻的方法，通过应用选择性接触区域中有机半导体层区域的反应性中间层

    公开(公告)号：US06806124B2

    公开(公告)日：2004-10-19

    申请号：US10285049

    申请日：2002-10-31

    申请人： Hagen Klauk ,  Günter Schmid ,  Tarik Kriem

    发明人： Hagen Klauk ,  Günter Schmid ,  Tarik Kriem

    IPC分类号： H01L2100

    CPC分类号： H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/308

    摘要： A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.

    摘要翻译： 制造半导体器件并且包含由有机半导体材料制成的第一主体和形成公共接触区域的由导电触点材料制成的第二主体。 首先，在基板上制造主体，该主体可以由接触材料或有机半导体材料构成，并且在其上施加中间层，中间层包含反应性掺杂剂。 之后，在中间层上制造由有机半导体材料或接触材料制成的本体。 包含在中间层中的掺杂剂影响有机半导体材料的区域选择性掺杂，结果是接触材料与有机半导体材料之间的电荷载流子的转变的接触电阻显着降低。

    Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
    58.
    发明授权
    Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production 有权
    集成无机/有机互补薄膜晶体管电路及其制造方法

    公开(公告)号：US06528816B1

    公开(公告)日：2003-03-04

    申请号：US09485847

    申请日：2001-05-29

    申请人： Thomas Jackson ,  Mathias Bonse ,  Daniel B. Thomasson ,  Hagen Klauk ,  David J. Gundlach

    发明人： Thomas Jackson ,  Mathias Bonse ,  Daniel B. Thomasson ,  Hagen Klauk ,  David J. Gundlach

    IPC分类号： H01L3300

    CPC分类号： H01L27/286 ,  H01L27/1214 ,  H01L27/283 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78684 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0545

    摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.

    摘要翻译： 一种集成有机/无机互补薄膜晶体管电路，包括可操作地连接在公共衬底上的第一和第二晶体管，其中第一晶体管是无机薄膜晶体管，第二晶体管是有机薄膜晶体管。 无机薄膜晶体管是n沟道晶体管，有机薄膜晶体管是p沟道晶体管，反之亦然。 每个晶体管具有单独的栅电极，并且在与无机薄膜晶体管电隔离的有机薄膜晶体管中的p沟道半导体的情况下，有机有源半导体材料。 在制造这种晶体管电路的第一种方法中，在公共衬底上为每个晶体管沉积单独的栅电极，有机薄膜晶体管的源极和漏极的材料沉积在相同的层级上 有机薄膜晶体管的薄膜结构，并且在每种情况下，有机p沟道晶体管中的有机活性半导体材料与无机n沟道晶体管电隔离，并且有机半导体材料中的有机半导体材料， 可选地与无机p沟道晶体管电隔离。

    Organic light emitters with improved carrier injection
    59.
    发明授权
    Organic light emitters with improved carrier injection 失效
    具有改进载流子注入的有机发光体

    公开(公告)号：US06720572B1

    公开(公告)日：2004-04-13

    申请号：US09602438

    申请日：2000-06-23

    申请人： Thomas N. Jackson ,  Hagen Klauk

    发明人： Thomas N. Jackson ,  Hagen Klauk

    IPC分类号： H01L3524

    CPC分类号： H01L51/5296 ,  H01L51/0081 ,  H01L51/0545 ,  H01L51/5088

    摘要： A light emitting device with improved carrier injection. The device has a layer of organic light emitting material and a layer of organic semiconductor material that are interposed between first and second contact layers. A carrier transport layer,may optionally be included between the semiconductor and light emitting layers. When used as a diode, the first and second contacts are functionally the anode and cathode. The device can also be a field effect transistor device by adding a gate contact and a gate dielectric. The first and second contacts then additionally have the function of source and drain, depending on whether the organic semiconductor material is a p-type or an n-type. Preferably, the organic semiconductor is formed with pentacene.

    摘要翻译： 具有改进载流子注入的发光器件。 该器件具有介于第一和第二接触层之间的有机发光材料层和有机半导体材料层。 载体传输层可以可选地包括在半导体和发光层之间。 当用作二极管时，第一和第二触点在功能上是阳极和阴极。 该器件还可以通过添加栅极接触和栅极电介质来形成场效应晶体管器件。 根据有机半导体材料是p型还是n型，第一和第二触点另外具有源极和漏极的功能。 优选地，有机半导体与并五苯形成。