公开(公告)号：US5548127A

公开(公告)日：1996-08-20

申请号：US255933

申请日：1994-06-07

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L33/28 ,  H01L33/40 ,  H01S5/327 ,  H01L29/161

CPC分类号： H01L33/40 ,  H01S5/327 ,  H01L33/28

摘要： In a light emitting device made of a group II-VI semiconductor, a P-type interface film including one or two layers is formed between the positive electrode and the uppermost P-type layer of the group II-VI semiconductor film, to make the energy band increase in steps from the electrode to the semiconductor film, thereby realizing a structure where the current flows at a low voltage. The II-VI semiconductor film is MBE-grown at a substrate temperature of 350.degree. C. or below. The P-type interface film is formed to have a carrier concentration of 10.sup.19 /cm.sup.3 or above by MBE growth at a substrate temperature lower than or equal to the substrate temperature at which the semiconductor film is formed.

摘要翻译： 在由II-VI族半导体制成的发光器件中，在正极和II-VI族半导体膜的最上层的P型层之间形成包含一层或两层的P型界面膜， 从电极到半导体膜的能带增加，从而实现电流以低电压流动的结构。 在350℃或更低的衬底温度下将II-VI半导体膜MBE生长。 在低于或等于形成半导体膜的衬底温度的衬底温度下，通过MBE生长，形成P型界面膜的载流子浓度为1019 / cm3以上。

公开(公告)号：US5477063A

公开(公告)日：1995-12-19

申请号：US260982

申请日：1994-06-15

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L33/145 ,  H01S5/327 ,  H01S5/2206 ,  H01S5/2231

摘要： In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.

摘要翻译： 在II-V族半导体的半导体发光器件中，在夹着有源层的两个光包层中的一个中形成用于使电流仅通过中心条带区域的电流阻挡层，从而提高发光效率 并提供导光路径。 在通过外延生长在衬底上形成每个层的工艺中，通过蚀刻电流阻挡层形成中心条纹区域。

公开(公告)号：US08421119B2

公开(公告)日：2013-04-16

申请号：US11854585

申请日：2007-09-13

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/7809

摘要： A GaN related compound semiconductor element includes: a channel layer made of a GaN related compound semiconductor; and a source layer and a drain layer, which are disposed in a manner of sandwiching the channel layer. The source layer includes two adjacent ridge portions which are formed by selective growth. A source electrode is formed over the surface, sandwiched by the ridge portions, of the channel layer, and the surfaces of the respective two adjacent ridge portions. The selective-growth mask formed between the two ridge portions is removed by wet etching. In addition, as another embodiment, a gate electrode is formed in a manner that the direction of the longer dimension of the gate electrode is aligned with the m plane of the channel layer. Moreover, as still another embodiment, the channel layer has a multilayer structure in which a GaN layer doped with no impurity is used as an intermediate layer.

摘要翻译： GaN相关化合物半导体元件包括：由GaN相关化合物半导体制成的沟道层; 以及以层叠沟道层的方式设置的源极层和漏极层。 源极层包括通过选择性生长形成的两个相邻的脊部分。 源极电极形成在沟道层的表面，被脊部夹持的表面和相应的两个相邻脊部的表面之上。 通过湿蚀刻除去在两个脊部之间形成的选择性生长掩模。 此外，作为另一实施例，栅电极以使栅电极的较长尺寸的方向与沟道层的m平面对齐的方式形成。 此外，作为另一实施例，沟道层具有其中不掺杂杂质的GaN层用作中间层的多层结构。

公开(公告)号：US07899101B2

公开(公告)日：2011-03-01

申请号：US12579130

申请日：2009-10-14

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/32 ,  H01S5/3211 ,  H01S5/3213 ,  H01S2301/173 ,  H01S2304/04

摘要： A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

摘要翻译： 双异质结的半导体发光器件包括有源层和覆层。 包覆层包括n型层和p型层。 包层夹层有源层。 包覆层的带隙能量大于有源层的带隙能量。 n型覆层的带隙能比p型覆层小。

公开(公告)号：US20100289041A1

公开(公告)日：2010-11-18

申请号：US12735376

申请日：2009-01-09

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L27/15 ,  H01L33/62

CPC分类号： H01L33/20 ,  H01L27/156 ,  H01L33/08 ,  H01L33/385

摘要： Provided is a semiconductor light emitting device which includes a number of hexagon-shaped semiconductor light emitting elements formed two-dimensionally, and in which the positive electrodes and the negative electrodes are formed on its light outputting surface side lest the light outputting efficiency should decrease. A mask 11 for selective growth is formed on a substrate 1 for growth, and an AlN buffer layer 2 is formed in regions from each of which a part of the mask 11 for selective growth is removed. An undoped GaN layer 3, an n-type GaN layer 4, an active layer 5 and a p-type GaN layer 6 are sequentially stacked on the AlN buffer layer 2. An isolation groove A for isolating the elements from one another is formed. A p-electrode 8 and an n-electrode 7 of each semiconductor light emitting element D are formed on its hexagon-shaped light outputting surface side, and the p-electrodes or n-electrodes of each two neighboring semiconductor light emitting elements are arranged adjacent to each other with the isolation groove A in between.

摘要翻译： 提供了一种半导体发光器件，其包括二维形成的多个六边形半导体发光元件，并且其正极和负极形成在其光输出表面侧，从而导致光输出效率降低。 在用于生长的基板1上形成用于选择性生长的掩模11，并且在去除了用于选择性生长的掩模11的一部分的区域中形成AlN缓冲层2。 未掺杂的GaN层3，n型GaN层4，有源层5和p型GaN层6依次层叠在AlN缓冲层2上。形成用于隔离元件的隔离槽A。 每个半导体发光元件D的p电极8和n电极7形成在其六边形光输出表面侧上，并且每个两个相邻的半导体发光元件的p电极或n电极被布置为相邻 彼此之间具有隔离槽A。

公开(公告)号：US20090166668A1

公开(公告)日：2009-07-02

申请号：US12085516

申请日：2006-11-28

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/3408

摘要： There is provided a nitride semiconductor light emitting device having high internal quantum efficiency by accelerating recombination radiation while employing a multiple quantum well structure in which each of well layers has a relatively large thickness. The nitride semiconductor light emitting device is provided with a nitride semiconductor lamination portion (6) provided on a substrate (1). The nitride semiconductor lamination portion (6) includes at least an active layer (4) in which a light emitting portion is formed. And the active layer is constituted with a multiple quantum well structure formed by laminating well layers (7) made of InxGa1-xN (0

摘要翻译： 提供了一种通过加速复合辐射而具有高内部量子效率的氮化物半导体发光器件，同时采用其中每个阱层具有相对较大厚度的多量子阱结构。 氮化物半导体发光器件设置有设置在基板（1）上的氮化物半导体层叠部（6）。 氮化物半导体层叠部（6）至少包括形成有发光部的活性层（4）。 并且有源层由通过层叠由In x Ga 1-x N（0

公开(公告)号：US20050145870A1

公开(公告)日：2005-07-07

申请号：US11052296

申请日：2005-02-08

申请人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

发明人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

IPC分类号： H01L33/38 ,  H01L33/42 ,  H01L29/06

CPC分类号： H01L33/38 ,  H01L33/42

摘要： A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.

摘要翻译： 在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。 在其表面上部分地形成电流阻挡层，同时在其整个表面上形成电流扩散电极。 电流扩散电极被图案化成多个发光单元部分（A），电极焊盘部分（B）和用于连接电极焊盘部分（B）和发光单元部分（A）的连接部分（C） 或两个发光单元部分（A）之间，并且可以根据电流扩散电极的图案化蚀刻半导体层叠部分的一部分。 接合电极可以形成在形成为使发光层形成部分不发光的电极焊盘部分（B）上。

公开(公告)号：US20050139853A1

公开(公告)日：2005-06-30

申请号：US11027945

申请日：2005-01-04

申请人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

发明人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L29/06

CPC分类号： H01L33/38 ,  H01L33/42

摘要： A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

公开(公告)号：US06680492B2

公开(公告)日：2004-01-20

申请号：US10127810

申请日：2002-04-23

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L3300

CPC分类号： H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16

摘要： A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor, layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductur substrate is employed.

摘要翻译： 提供了使用不产生晶体缺陷，位错并且可以通过切割容易地分离成芯片的氮化镓型化合物半导体的发光器件及其制造方法。 作为层叠氮化镓系化合物半导体层的衬底，使用氮化镓系化合物半导体衬底，单晶硅，II-VI族化合物半导体衬底或III-V族化合物半导体衬底。

公开(公告)号：US06426518B1

公开(公告)日：2002-07-30

申请号：US09477830

申请日：2000-01-05

申请人： Yukio Shakuda ,  Yukio Matsumoto ,  Shunji Nakata

发明人： Yukio Shakuda ,  Yukio Matsumoto ,  Shunji Nakata

IPC分类号： H01L2715

CPC分类号： H01L33/30 ,  H01L33/14 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.

摘要翻译： 在n型GaAs衬底（1）上沉积包括InGaAlP基化合物半导体并形成发光层的发光层形成部分（9），包括AlGaAs基化合物半导体的p型电流分散层（5） 在发光层形成部分（9）的表面上，通过包括p型GaAs的接触层（6）在电流分散层（5）的表面的一部分上设置p侧电极（7） 并且在背面设置有n侧电极（8）。 GaAs衬底（1）的表面。 包含AlGaAs的电流色散层（5）的维氏硬度为700以上。 结果，在处理安装或引线接合时，在LED芯片中不产生断裂或裂纹，并且可以提高组装步骤的产量。