公开(公告)号：US07211354B2

公开(公告)日：2007-05-01

申请号：US10372396

申请日：2003-02-25

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F9/00 ,  G03F1/00

CPC分类号： G03F9/7084 ,  G03B27/42 ,  G03F1/60 ,  G03F9/7076 ,  Y10T428/24545

摘要： A mask substrate comprises a transparent substrate including a reference mark and a light shielding film formed on the transparent substrate.

摘要翻译： 掩模基板包括具有参考标记的透明基板和形成在透明基板上的遮光膜。

公开(公告)号：US07097946B2

公开(公告)日：2006-08-29

申请号：US10615194

申请日：2003-07-09

申请人： Sachiyo Ito ,  Masamitsu Itoh ,  Masahiko Hasunuma

发明人： Sachiyo Ito ,  Masamitsu Itoh ,  Masahiko Hasunuma

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F1/32

摘要： A photomask comprises a substrate, a translucent film selectively formed on the substrate, and a shading film selectively formed on the translucent film, wherein when the substrate, the translucent film and the shading film have Young's moduli (MPa) E0 E1 and E2, and film thickness (m) d0, d1 and d2 respectively, internal stresses (MPa) of the translucent film and the shading film at room temperature are s1 and s2 respectively, a covering rate by the translucent film defined by an area in which the shading film is not formed is expressed as h, and coefficients are expressed as k1=1.3×10−8, k2=−9.5×10−2, k3=6.0×10−7, and k4=−5.2×10−2 respectively, the substrate, the translucent film and the shading film satisfy a condition given by the following expression:  1 E 0 · d 0 · { h · ( k 1 · S 1 E 1 · d 1 + k 2 ) + ( k 3 · S 2 E 2 · d 2 + k 4 ) }  ≦ 1.4 × 10 - 4 ⁢ ( m - 1 ) .

公开(公告)号：US20050242062A1

公开(公告)日：2005-11-03

申请号：US11103472

申请日：2005-04-12

申请人： Hideaki Sakurai ,  Masamitsu Itoh

发明人： Hideaki Sakurai ,  Masamitsu Itoh

IPC分类号： B44C1/22 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/6708

摘要： A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includes placing the target substrate on the substrate holding mechanism, laying out an auxiliary plate at a periphery of the substrate such that the two main faces are substantially flush with each other, supplying a second chemical solution onto the main faces, dispensing the first solution from the dispensing port and sucking the first and second solutions through the suction port, with the dispensing and suction ports brought into contact with the second solution, and while dispensing the first solution from the dispensing port and sucking the first solution through the suction port, scanning the dispensing/sucking mechanism such that the dispensing and suction ports are opposed to the main face of the substrate.

摘要翻译： 一种具有基板保持机构的基板处理装置和包括用于供给第一化学溶液的化学溶液分配口和化学溶液吸入口的化学溶液分配/吸引机构的方法，包括将目标基板放置在基板保持机构上， 在所述基板的周围布置辅助板，使得所述两个主面彼此基本齐平，将第二化学溶液供应到所述主面上，从所述分配端口分配所述第一溶液并将所述第一溶液和所述第二溶液通过 所述吸入口与所述分配和吸入口与所述第二溶液接触，并且在从所述分配端口分配所述第一溶液并且通过所述吸入口吸入所述第一溶液的同时，扫描所述分配/吸入机构，使得所述分配和抽吸 端口与基板的主面相对。

公开(公告)号：US20050050760A1

公开(公告)日：2005-03-10

申请号：US10868031

申请日：2004-06-16

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： F26B11/18 ,  F26B21/14 ,  H01L21/00 ,  H01L21/304 ,  F26B17/00

CPC分类号： H01L21/67034

摘要： A substrate drying method according to the present invention comprises disposing a flat plate which has an opening and which is equal to a substrate or larger than the substrate above the substrate to have a predetermined space between the flat plate and the substrate and discharging a gas from the opening, and moving, by the gas, a removal target on the substrate outside the substrate.

摘要翻译： 根据本发明的基板干燥方法包括设置具有开口并且等于基板的平板或大于基板上方的基板的平板，以在平板和基板之间具有预定的空间，并将气体从 所述开口和由所述气体移动在所述基板外部的所述基板上的去除靶。

公开(公告)号：US20050019677A1

公开(公告)日：2005-01-27

申请号：US10896970

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： B32B9/00 ,  B32B17/06 ,  G03F1/00 ,  G03F1/60 ,  G03F9/00

CPC分类号： G03F1/60

摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.

摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。

公开(公告)号：US20050019676A1

公开(公告)日：2005-01-27

申请号：US10896968

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/50 ,  G03F1/60 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/60

摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is μoτ μoρε τηαν 0.5 μm is selected.

摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差为muotau muorhoepsilon tauetaalphanu 0.5um的衬底。

公开(公告)号：US06537844B1

公开(公告)日：2003-03-25

申请号：US10087860

申请日：2002-03-05

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： H01L2100

CPC分类号： G03F7/707 ,  G03F1/60 ,  G03F7/703 ,  G03F7/70433 ,  G03F7/70783 ,  Y10S438/975

摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

公开(公告)号：US06316163B1

公开(公告)日：2001-11-13

申请号：US09163421

申请日：1998-09-30

申请人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

发明人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

IPC分类号： G03F900

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/7045 ,  H01J37/3174

摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.

摘要翻译： 一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算 将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层 用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

公开(公告)号：US5629115A

公开(公告)日：1997-05-13

申请号：US583857

申请日：1996-01-11

申请人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

发明人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

IPC分类号： G03F1/32 ,  G03F1/68 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/68

摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.

摘要翻译： 本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域 或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。 另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和 通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

公开(公告)号：US4237232A

公开(公告)日：1980-12-02

申请号：US902225

申请日：1978-05-02

申请人： Kiyoshi Yoshizawa ,  Kikuo Nojiro ,  Masamitsu Itoh ,  Hiroshi Kiuchi ,  Kazuo Horii

发明人： Kiyoshi Yoshizawa ,  Kikuo Nojiro ,  Masamitsu Itoh ,  Hiroshi Kiuchi ,  Kazuo Horii

IPC分类号： A23K1/16 ,  A23K1/18 ,  C12N1/00 ,  C12N1/14 ,  C12N1/16 ,  C12N1/20

CPC分类号： C12N1/00 ,  A23K20/10 ,  A23K50/30 ,  Y10S426/807 ,  Y10S435/839

摘要： Distillers solubles are purified by a centrifugal separation to a degree above 50,000, which is the product of g .times. minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve treatment, ultrafiltration, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying.Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.

摘要翻译： 蒸馏器可溶物通过离心分离纯化至50,000以上，其为g×分钟的产物，或通过加入助滤剂进行过滤。 澄清物质通过分子筛处理，超滤，反渗透或有机溶剂沉淀纯化。 通过喷雾干燥，亲液干燥或空气干燥将由此获得的澄清物质或纯化物粉碎。 将所述澄清物质，纯化物质或粉碎物质作为可用组分加入到发酵培养基或饲料中。