公开(公告)号：US06300783B1

公开(公告)日：2001-10-09

申请号：US09148147

申请日：1998-09-04

申请人： Masao Okubo ,  Kazumasa Okubo ,  Hiroshi Iwata

发明人： Masao Okubo ,  Kazumasa Okubo ,  Hiroshi Iwata

IPC分类号： G01R3102

CPC分类号： G01R3/00 ,  G01R1/07357

摘要： A first assembly configuration features in including: a plurality of probes having a buckling portion to buckle, upon a contact by an end of a contact portion onto an electrode of semiconductor integrated circuit; a first board provided with a first wiring pattern connected with a connecting portion of the probe; a second board removably fastened with the first board and provided with a second wiring pattern connected with the first wiring pattern; housing members mounted with the second board for holding the contact portion of the probe. Next configuration features in including: two kinds of probes; measurement probes and connection probes anew, and a plurality of connection probes include buckling portions to buckle, upon a contact by an end of contact portion onto the wiring pattern provided with the first board when inserted into holes provided with the a second board; wherein through holes provided with the second board are positioned to align to the arrangement of wiring pattern provided with the first board. Thereby, undesirable deviation of contact point by the probe is avoided and a suitable contact pressure is preferably kept, and further convenience in the work of exchanging damaged probes is brought about.

摘要翻译： 第一组装构造的特征在于包括：多个探针，其在接触部分的端部接触到半导体集成电路的电极上时具有弯曲部分以弯曲; 第一板，其设置有与所述探针的连接部分连接的第一布线图案; 第二板，其与所述第一板可移除地紧固并设置有与所述第一布线图形连接的第二布线图案; 安装有第二板的壳体构件用于保持探针的接触部分。 下一个配置功能包括：两种探头; 重新测量探针和连接探针，并且当插入设置有第二板的孔中时，接触部分的端部与设置有第一板的布线图案接触时，多个连接探针包括弯曲部分以弯曲; 其中设置有第二板的通孔被定位成与设置有第一板的布线图案的布置对准。 因此，避免了由探针引起的接触点的不期望的偏差，并且优选地保持适当的接触压力，并且进一步方便了更换损坏的探针的工作。

公开(公告)号：US06291861B1

公开(公告)日：2001-09-18

申请号：US09345414

申请日：1999-06-30

申请人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

发明人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

IPC分类号： H01L21336

CPC分类号： H01L29/66772 ,  H01L21/2257 ,  H01L27/088 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/4941 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78654

摘要： A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide film at a first face, a portion of the source/drain regions being located above the first face. The electrode is in contact with the source/drain region at a second face, the second face constituting an angle with respect to the first face.

摘要翻译： 具有器件分离区域和有源区域的半导体器件包括栅极氧化膜，源极/漏极区域和电耦合到源极/漏极区域的电极。 有源区在第一面处与栅极氧化膜接触，源/漏区的一部分位于第一面的上方。 电极在第二面处与源极/漏极区域接触，第二面部相对于第一面构成一个角度。

公开(公告)号：US5960319A

公开(公告)日：1999-09-28

申请号：US699410

申请日：1996-08-19

申请人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

发明人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/44

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26526 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/823807 ,  H01L29/665 ,  Y10S257/90

摘要： A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

摘要翻译： 公开了一种半导体器件及其制造方法。 在硅半导体衬底上形成氮化硅膜。 然后将杂质离子注入到硅半导体衬底的所需区域中，使得氮化硅膜的氮原子和硅原子与杂质离子的引入一起并入到硅半导体衬底的表面中。 硅半导体衬底具有混入其中的最小化的氧含量，并且在注入杂质离子时恢复由氮原子填充的晶体缺陷。 制造的半导体器件没有栅极电极耗尽和结电流泄漏之间的折衷关系以及短沟道效应。

公开(公告)号：US5725475A

公开(公告)日：1998-03-10

申请号：US712843

申请日：1996-09-12

申请人： Naoki Yasui ,  Hiroshi Iwata ,  Hiroyuki Katsurada ,  Keiji Ito ,  Takayuki Ogino

发明人： Naoki Yasui ,  Hiroshi Iwata ,  Hiroyuki Katsurada ,  Keiji Ito ,  Takayuki Ogino

IPC分类号： G02B23/24 ,  A61B1/00 ,  A61B1/04 ,  A61B1/12

CPC分类号： A61B1/00091 ,  A61B1/00101 ,  A61B1/127 ,  A61B1/042

摘要： A cap assembly of a front end of an inserting portion of an endoscope and a cap to be attached to the front end of the endoscope, comprising; a first engaging portion provided on the front end of the inserting portion of the endoscope; and, a second engaging portion provided on the cap being disengageably engaged with the first engaging portion of the endoscope. The front end of the inserting portion of the endoscope is provided with a projection whose diameter being smaller than a diameter of the front end, the projection being connected to the front end through a stepped portion.

公开(公告)号：US5694779A

公开(公告)日：1997-12-09

申请号：US686066

申请日：1996-07-24

申请人： Hiroaki Matsushima ,  Kazuya Matsuo ,  Kazuhiro Endoh ,  Hiroshi Iwata

发明人： Hiroaki Matsushima ,  Kazuya Matsuo ,  Kazuhiro Endoh ,  Hiroshi Iwata

IPC分类号： F25D17/00 ,  F25B25/00 ,  F25B39/02 ,  F25B39/04 ,  F25B45/00 ,  F25D11/02 ,  F25D17/02 ,  F25D17/06 ,  F25D29/00 ,  F28F1/22 ,  F28F13/06 ,  C25D19/00

CPC分类号： F28D1/0308 ,  F25B25/005 ,  F25B39/04 ,  F25D17/065 ,  F28F1/22 ,  F28F13/06 ,  F25B2309/06 ,  F25B2339/043 ,  F25B2400/12 ,  F25D17/02 ,  F25D2317/0653 ,  F25D2400/04 ,  F25D2700/02

摘要： In a refrigerator, an intermediate heat exchanger as an evaporator in the refrigeration cycle 11 in which a flammable refrigerant is sealed is provided inside of a heat insulating material. A heat transferring device is provided between the intermediate heat exchanger and a heat exchanger for cooling. At the time of stop and occurrence of the refrigerant leakage, the refrigerant inside of the intermediate heat exchanger is recovered into the condenser or into the refrigerant recovery cylinder so that even if the refrigerant leaks out, a leaked amount of the refrigerant into the refrigerator is reduced.

摘要翻译： 在制冷机中，在隔热材料的内部设置有制冷循环11中的作为蒸发器的中间热交换器，其中可燃性制冷剂被密封。 在中间热交换器和用于冷却的热交换器之间设置有传热装置。 在制冷剂泄漏停止和发生时，中间热交换器内的制冷剂回收到冷凝器或制冷剂回收缸中，使得即使制冷剂泄漏，制冷剂的泄漏量也被设置为 减少

公开(公告)号：US5670889A

公开(公告)日：1997-09-23

申请号：US404729

申请日：1995-03-15

申请人： Masao Okubo ,  Nobuyuki Murakami ,  Kouji Katahira ,  Hiroshi Iwata ,  Kazumasa Okubo

发明人： Masao Okubo ,  Nobuyuki Murakami ,  Kouji Katahira ,  Hiroshi Iwata ,  Kazumasa Okubo

IPC分类号： G01R1/073 ,  G01R31/28 ,  H01L21/66 ,  G01R31/02

CPC分类号： G01R1/07342 ,  G01R31/2855

摘要： Probe card is a part which is incorporated into a probing equipment to test finished IC chips, This card is customarily mounted with a plurality of probes, very fine needle and generally bent, and each probe is disposed so that its front end may pinpoint to a pad of an IC chip of interest. In performing the probing test, a most important condition is to keep the probe contact pressure on the pad of an IC chip at a constant position during measurement time, but in performing such at a high temperature, heated IC chips radiate the probe card and thereby positional deviation of the contact point is caused by heat expansion of the probe card and hence the contact pressure may change. The invented probe card employs a ceramic material in fabricating the probe card for possessing a very low expansion coefficient or for possessing an equivalent coefficient value to the IC chip or wafers, thereby the positional deviation of the probe contact is avoided and other devices to cope with difficulties caused by performance at a high temperature are disclosed.

摘要翻译： 探针卡是结合在探测设备中以测试完成的IC芯片的部件。该卡通常安装有多个探针，非常细的针并且通常弯曲，并且每个探针被设置成使得其前端可以精确定位到 感兴趣的IC芯片的焊盘。 在进行探测测试时，最重要的条件是在测量时间内将探针接触压力保持在恒定位置，但是在高温下进行，加热的IC芯片辐射探针卡 接触点的位置偏差是由探针卡的热膨胀引起的，因此接触压力可能改变。 本发明的探针卡采用陶瓷材料制造探针卡，用于具有非常低的膨胀系数或者具有相当于IC芯片或晶片的系数值，从而避免了探针接触的位置偏差，并且其他装置可以应付 公开了在高温下由性能引起的困难。

公开(公告)号：US5378289A

公开(公告)日：1995-01-03

申请号：US151271

申请日：1993-11-12

申请人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

发明人： Shigeru Noguchi ,  Keiichi Sano ,  Hiroshi Iwata

IPC分类号： H01L21/20 ,  H01L31/0236 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/0236 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： A mold of crystalline silicon having a textured surface is placed on an amorphous silicon film so that projecting portions of the textured surface are in contact with a surface of the silicon film. The amorphous silicon film is then heated for crystallizing the same by solid phase epitaxy, thereby forming a crystalline silicon film having a textured surface corresponding to that of the mold.

摘要翻译： 具有纹理表面的晶体硅的模具被放置在非晶硅膜上，使得纹理表面的突出部分与硅膜的表面接触。 然后通过固相外延加热非晶硅膜使其结晶，从而形成具有对应于模具的纹理表面的结晶硅膜。

公开(公告)号：US5370747A

公开(公告)日：1994-12-06

申请号：US980451

申请日：1992-11-23

申请人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Shigeru Noguchi ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H01L31/04 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/075 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/0236 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： A photovoltaic device including a substrate, a first electrode layer provided on the substrate, a photoelectric conversion layer provided on the first electrode, and a second electrode layer provided on the photoelectric conversion layer. A discontinuous interfacial layer is provided at at least one of the interfaces between a first conductivity type layer and a photoactive layer provided in the photoelectric conversion layer, between the photoactive layer and a second, opposite conductivity type layer of the photoelectric conversion layer, and between the photoelectric conversion layer and the second electrode layer. The at least one interface provided with the discontinuous interfacial layer may be so textured that portions of the interface not provided with interfacial layers project toward the substrate.

摘要翻译： 一种光电器件，包括衬底，设置在衬底上的第一电极层，设置在第一电极上的光电转换层和设置在光电转换层上的第二电极层。 在第一导电类型层和设置在光电转换层中的光敏层之间的光电转换层和光电转换层的第二相反导电类型层之间的界面中的至少一个界面和介于 光电转换层和第二电极层。 设置有不连续界面层的至少一个界面可以是如此纹理的，使得不具有界面层的界面的部分向基板突出。

公开(公告)号：US5318919A

公开(公告)日：1994-06-07

申请号：US738201

申请日：1991-07-30

申请人： Shigeru Noguchi ,  Satoshi Ishida ,  Hiroshi Iwata ,  Keiichi Sano

发明人： Shigeru Noguchi ,  Satoshi Ishida ,  Hiroshi Iwata ,  Keiichi Sano

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L29/784

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/78618 ,  H01L29/78675

摘要： A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.

摘要翻译： 一种薄膜晶体管的制造方法，其中在玻璃基板上形成由本征非晶硅层和导电非晶硅层构成的层叠体，并在不高于600℃的低温下退火，从而获得多晶硅 电影。 导电非晶硅层在芯体上产生多晶化，因此本征非晶硅层通过在低温退火而容易地重结晶。

公开(公告)号：US5295808A

公开(公告)日：1994-03-22

申请号：US859860

申请日：1992-03-30

申请人： Shigeru Machida ,  Hiroshi Iwata ,  Isamu Tsubono ,  Kazutaka Suefuji ,  Seiji Ohtake ,  Kenji Tojo

发明人： Shigeru Machida ,  Hiroshi Iwata ,  Isamu Tsubono ,  Kazutaka Suefuji ,  Seiji Ohtake ,  Kenji Tojo

IPC分类号： F04C18/02 ,  F04C29/00 ,  F04B35/04 ,  F04B39/06 ,  F01C1/04 ,  F01C21/00

CPC分类号： F04C18/023 ,  F04C29/0085

摘要： A synchronous rotating type scroll fluid machine has a first scroll member driven by a shaft of a first motor and having an end plate and a scroll wrap protruding from a surface of the scroll end plate, and a second scroll member driven by a shaft of a second motor and having a scroll end plate and a scroll wrap protruding from a surface of the scroll end plate. The machine further has a mounting structure for mounting the scroll members such that the axes of the scroll members are offset from each other and that said scroll wraps of the scroll members mesh with each other. Thrust balancing arrangements are provided for attaining a balance between the thrusting forces acting on each said scroll member, both at the mounting structure and said scroll members. The thrust balancing arrangement includes through-bores formed in the respective motor shafts and serving as passage bores for discharging a compressed gas. This arrangement also provides cooling effect as the compressed working gas functions as a cooling medium and, in addition, serves to suppress distortion of the scroll end plate of each scroll member.

摘要翻译： 同步旋转式涡旋流体机具有由第一马达的轴驱动的第一涡旋构件，具有从涡旋端板的表面突出的端板和涡卷，以及由轴的驱动的第二涡旋构件 第二电动机并具有从涡旋端板的表面突出的涡旋端板和涡卷。 该机器还具有用于安装涡旋构件的安装结构，使得涡旋构件的轴线彼此偏移，并且涡旋构件的所述涡旋涡卷彼此啮合。 提供了推力平衡装置，用于在安装结构和所述涡旋构件两者之间实现作用在每个所述涡旋构件上的推力之间的平衡。 推力平衡装置包括形成在各个电动机轴中的通孔，并且用作排出压缩气体的通道孔。 这种布置还提供冷却效果，因为压缩的工作气体用作冷却介质，另外还用于抑制每个涡旋件的涡旋端板的变形。