公开(公告)号：US07201413B2

公开(公告)日：2007-04-10

申请号：US11201015

申请日：2005-08-10

Applicant: Bernhard Hillekes ,  Achim Kröning ,  Hui Wang ,  Michael Roll ,  Dirk Kroeger

Inventor： Bernhard Hillekes ,  Achim Kröning ,  Hui Wang ,  Michael Roll ,  Dirk Kroeger

IPC: B60R19/34

CPC classification number: B60R19/34 ,  B60R19/24

Abstract: A crash box for installation between a longitudinal member and a bumper cross member of a motor vehicle, includes a sheet metal body having a deformation member which extends anteriorly of an end surface of the longitudinal member and whose maximum crumpling capability defines the energy absorption of the crash box. In prolongation of the deformation member is an attachment member which is engaged in the longitudinal member and detachably secured by bolts therein. Formed in a transition zone between the deformation member and the attachment member, is a stop which is configured in the form of an outwardly directed material protuberance or outwardly directed thickened area of the sheet metal body and bearing against the end surface of the longitudinal member.

Abstract translation: 用于安装在机动车辆的纵向构件和保险杠横梁之间的碰撞箱包括具有变形构件的金属板体，所述变形构件在纵向构件的端面的前方延伸，并且其最大弯曲能力限定了 碰撞盒。 变形构件的延长部分是与纵向构件接合并通过螺栓可拆卸地固定的附接构件。 在变形构件和附接构件之间的过渡区域中形成的止挡件被构造成金属板体的向外指向的材料突起或向外指向的增厚区域的形式，并且抵靠纵向构件的端表面。

公开(公告)号：US20070039827A1

公开(公告)日：2007-02-22

申请号：US10538402

申请日：2003-12-09

Applicant: Hui Wang ,  Voha Nuch

Inventor： Hui Wang ,  Voha Nuch

IPC: B23H3/00

CPC classification number: C25D17/001 ,  C25D5/08 ,  H01L21/681

Abstract: An apparatus for electropolishing and/or electroplating metal layers on a semiconductor wafer includes a receptacle having a plurality of section walls. The apparatus includes a wafer chuck configured to hold the semiconductor wafer and to position the semiconductor wafer within the receptacle with a surface of the semiconductor wafer adjacent to top portions of the plurality of section walls. The apparatus also includes a first plurality of sensors configured to measure alignment between the center of one of the plurality of section walls to the center of the wafer chuck, and thus the center of the semiconductor wafer.

Abstract translation: 用于在半导体晶片上电解抛光和/或电镀金属层的装置包括具有多个部分壁的插座。 该装置包括晶片卡盘，其被配置为保持半导体晶片并且将半导体晶片定位在插座内，其中半导体晶片的表面与多个部分壁的顶部部分相邻。 该装置还包括第一多个传感器，其被配置为测量多个部分壁中的一个的中心与晶片卡盘的中心之间的对准，并且因此测量半导体晶片的中心。

公开(公告)号：US20060245629A1

公开(公告)日：2006-11-02

申请号：US11412286

申请日：2006-04-27

Applicant: Zhimin Huo ,  Hui Wang ,  Xu Liu

Inventor： Zhimin Huo ,  Hui Wang ,  Xu Liu

IPC: G06K9/00

CPC classification number: G06T7/60 ,  G06T7/0012 ,  G06T2207/10096 ,  G06T2207/20036 ,  G06T2207/30068

Abstract: A method for detecting and analyzing candidate lesions in a magnetic resonance image of a breast. The method includes the steps of: accessing a plurality of temporal magnetic resonance images of the breast; identifying candidate lesions by performing a temporal pattern analysis of the plurality of images to produce temporal features based on an uptake phase and a washout phase; performing a morphological operation on the candidate lesions to produce morphological features; and classifying the candidate lesions using the morphological features and temporal features to produce classified candidate lesions.

Abstract translation: 一种用于检测和分析乳房的磁共振图像中的候选病变的方法。 该方法包括以下步骤：访问乳房的多个时间磁共振图像; 通过执行所述多个图像的时间模式分析来识别候选病变，以基于摄取阶段和冲洗阶段产生时间特征; 对候选病变进行形态学运算以产生形态特征; 并使用形态特征和时间特征对候选病变进行分类以产生分类的候选病变。

公开(公告)号：US20060227917A1

公开(公告)日：2006-10-12

申请号：US11446144

申请日：2006-06-05

Applicant: Aaron Buchwald ,  Michael Le ,  Josephus Van Engelen ,  Xicheng Jiang ,  Hui Wang ,  Howard Baumer ,  Avanindra Madisetti

Inventor： Aaron Buchwald ,  Michael Le ,  Josephus Van Engelen ,  Xicheng Jiang ,  Hui Wang ,  Howard Baumer ,  Avanindra Madisetti

IPC: H04L7/00

CPC classification number: H04L25/03885 ,  H03L7/07 ,  H03L7/0814 ,  H03L7/091 ,  H04L7/0025 ,  H04L7/0274 ,  H04L7/0337 ,  H04L25/03006 ,  H04L2025/03477 ,  H04L2025/03617

Abstract: A high-speed serial data transceiver includes multiple receivers and transmitters for receiving and transmitting multiple analog, serial data signals at multi-gigabit-per-second data rates. Each receiver includes a timing recovery system for tracking a phase and a frequency of the serial data signal associated with the receiver. The timing recovery system includes a phase interpolator responsive to phase control signals and a set of reference signals having different predetermined phases. The phase interpolator derives a sampling signal, having an interpolated phase, to sample the serial data signal. The timing recovery system in each receiver independently phase-aligns and frequency synchronizes the sampling signal to the serial data signal associated with the receiver. A receiver can include multiple paths for sampling a received, serial data signal in accordance with multiple time-staggered sampling signals, each having an interpolated phase.

公开(公告)号：US20060221353A9

公开(公告)日：2006-10-05

申请号：US10276286

申请日：2001-05-03

Applicant: Hui Wang

Inventor： Hui Wang

IPC: G01N21/00

CPC classification number: B24B49/10 ,  B24B37/013 ,  C25F3/22 ,  C25F7/00 ,  G01N21/55 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/7684

Abstract: An apparatus for detecting the end-point of an electropolishing process of a metal layer formed on a wafer (1004) includes an end-point detector. The end-point detector is disposed adjacent the nozzle (1008) used to electropolish the wafer. In one embodiment, the end-point detector is configured to measure the optical reflectivity of the portion of the wafer being electropolished.

Abstract translation: 用于检测形成在晶片（1004）上的金属层的电解抛光工艺的端点的装置包括端点检测器。 端点检测器设置在用于电抛光晶片的喷嘴（1008）附近。 在一个实施例中，端点检测器被配置为测量正被电抛光的晶片的部分的光学反射率。

公开(公告)号：US20060049056A1

公开(公告)日：2006-03-09

申请号：US10510656

申请日：2003-04-11

Applicant: Hui Wang ,  Jian Wang ,  Peihaur Yih ,  Huiquan Wu

Inventor： Hui Wang ,  Jian Wang ,  Peihaur Yih ,  Huiquan Wu

IPC: C25D7/12

CPC classification number: C25D3/02 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76877

Abstract: In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed regions within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

Abstract translation: 在本发明的一个方面，提供了一种用于在晶片上电镀导电膜的示例性方法。 该方法包括在金属层在第一密度的凹陷区域之上平面之前在第一电流密度范围内的具有凹陷区域和非凹陷区域的半导体结构上电镀金属膜，并且在金属之后的第二电流密度范围内进行电镀 层在凹陷区域之上是平面的。 第二电流密度范围大于第一电流密度范围。 在一个示例中，该方法还包括在第二电流密度范围内的电镀，直到金属层在第二密度的凹陷区域之上是平面的，第二密度大于第一密度，并且之后在第三电流密度范围内进行电镀。

公开(公告)号：US06995594B2

公开(公告)日：2006-02-07

申请号：US10855392

申请日：2004-05-28

Applicant: Aaron W. Buchwald ,  Myles Wakayama ,  Michael Le ,  Jurgen Van Engelen ,  Xicheng Jiang ,  Hui Wang ,  Howard A. Baumer ,  Avanindra Madisetti

Inventor： Aaron W. Buchwald ,  Myles Wakayama ,  Michael Le ,  Jurgen Van Engelen ,  Xicheng Jiang ,  Hui Wang ,  Howard A. Baumer ,  Avanindra Madisetti

IPC: H03H11/16

CPC classification number: H04L25/03885 ,  H03L7/07 ,  H03L7/0814 ,  H03L7/091 ,  H04L7/0025 ,  H04L7/0274 ,  H04L7/0337 ,  H04L25/03006 ,  H04L2025/03477 ,  H04L2025/03617

Abstract: A high-speed serial data transceiver includes multiple receivers and transmitters for receiving and transmitting multiple analog, serial data signals at multi-gigabit-per-second data rates. Each receiver includes a timing recovery system for tracking a phase and a frequency of the serial data signal associated with the receiver. The timing recovery system includes a phase interpolator responsive to phase control signals and a set of reference signals having different predetermined phases. The phase interpolator derives a sampling signal, having an interpolated phase, to sample the serial data signal. The timing recovery system in each receiver independently phase-aligns and frequency synchronizes the sampling signal to the serial data signal associated with the receiver. A receiver can include multiple paths for sampling a received, serial data signal in accordance with multiple time-staggered sampling signals, each having an interpolated phase.

公开(公告)号：US06853941B2

公开(公告)日：2005-02-08

申请号：US10136710

申请日：2002-04-30

Applicant: Hui Wang ,  Kenichi Kanai ,  Hiroyasu Koike

Inventor： Hui Wang ,  Kenichi Kanai ,  Hiroyasu Koike

IPC: G01R31/305 ,  G01R31/00

CPC classification number: G01R31/305

Abstract: Methods and apparatus, including computer program products, implementing and using techniques for open-loop waveform acquisition. In general, in one aspect, the invention provides a method for open-loop waveform acquisition. The method includes acquiring an S-curve of an acquisition loop of an electron-beam probe system. The S-curve represents a response of the acquisition loop to changes of potential differences between the acquisition loop and a device under test. The method includes calibrating the acquisition loop to obtain a linear region in the acquired S-curve and using the linear portion of the acquired S-curve to calculate voltage at a probe point of the device under test.

Abstract translation: 方法和设备，包括计算机程序产品，实现和使用开环波形采集技术。 通常，一方面，本发明提供了一种开环波形采集方法。 该方法包括获取电子束探针系统的采集环路的S曲线。 S曲线表示采集环路对采集环路和被测器件之间的电位差的变化的响应。 该方法包括校准采集环路以获得所获得的S曲线中的线性区域，并且使用获取的S曲线的线性部分来计算被测器件的探针点处的电压。

公开(公告)号：US06495007B2

公开(公告)日：2002-12-17

申请号：US09800990

申请日：2001-03-07

Applicant: Hui Wang

Inventor： Hui Wang

IPC: B23H304

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/06 ,  C25F7/00

Abstract: A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.

Abstract translation: 用于在晶片的电抛光和/或电镀期间保持晶片的晶片卡盘包括顶部部分，底部部分和弹簧部件。 根据本发明的一个方面，顶部部分和底部部分构造成接收用于处理的晶片。 弹簧构件设置在底部上并构造成向晶片施加电荷。 根据本发明的另一方面，弹簧构件接触晶片外周的一部分。 在本发明的另一种配置中，晶片卡盘还包括密封件，用于将弹簧件与用于电抛光和/或电镀工艺中的电解液密封。

公开(公告)号：US06440295B1

公开(公告)日：2002-08-27

申请号：US09497894

申请日：2000-02-04

Applicant: Hui Wang

Inventor： Hui Wang

IPC: C25F316

CPC classification number: H01L21/32115 ,  C25F3/22 ,  C25F7/00 ,  H01L21/32134 ,  H01L21/7684

Abstract: An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the polishing receptacle (100). The electrolyte (34) is delivered through the fluid inlet (5, 7, 9) into the polishing receptacle (100). The cathode (1, 2, 3) then applies an electropolishing current to the electrolyte to electropolish the wafer (31). In accordance with one aspect of the present invention, discrete portions of the wafer (31) can be electropolished to enhance the uniformity of the electropolished wafer.

Abstract translation: 用于抛光形成在晶片（31）上的金属层的电抛光设备包括电解质（34），抛光容器（100），晶片卡盘（29），流体入口（5,7,9） 一个阴极（1,2,3）。 晶片卡盘（29）将晶片（31）保持并定位在抛光容器（100）内。 电解质（34）通过流体入口（5,7,9）输送到抛光容器（100）中。 然后，阴极（1,2,3）将电解抛光电流施加到电解质上以对晶片（31）进行电解抛光。 根据本发明的一个方面，晶片（31）的离散部分可以被电抛光以增强电抛光晶片的均匀性。