公开(公告)号：US11105760B2

公开(公告)日：2021-08-31

申请号：US15948665

申请日：2018-04-09

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: G01N27/12

Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.

公开(公告)号：US10672875B2

公开(公告)日：2020-06-02

申请号：US16224225

申请日：2018-12-18

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Guenther Ruhl ,  Hans-Joachim Schulze

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/417 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/41 ,  H01L29/78

Abstract: A method for forming a silicon carbide semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate and forming a silicon carbide layer of the silicon carbide semiconductor device on the at least one graphene layer. At least one of forming the silicon carbide layer and forming the at least one graphene layer includes: heating the semiconductor substrate an inert gas atmosphere until a predefined temperature is reached.

公开(公告)号：US10403556B2

公开(公告)日：2019-09-03

申请号：US15381155

申请日：2016-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Peter Irsigler ,  Joachim Mahler ,  Guenther Ruhl ,  Hans-Joachim Schulze ,  Markus Zundel

IPC: B82Y30/00 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L23/367 ,  H01L23/373 ,  H01L23/427 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739

Abstract: A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

公开(公告)号：US20180240887A1

公开(公告)日：2018-08-23

申请号：US15895427

申请日：2018-02-13

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Marco Kraus ,  Guenther Ruhl

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/16 ,  H01L29/10

CPC classification number: H01L29/66045 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/0642 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1606 ,  H01L29/402 ,  H01L29/408 ,  H01L29/66037 ,  H01L29/66977 ,  H01L29/735 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/861

Abstract: A method for use in manufacturing an electronic component comprises forming a layered structure comprising a dielectric structure layer, a channel layer and a gate layer. The dielectric structure layer comprises a first portion and a second portion that differ from one another in respect of fixed charges. The channel layer comprises a two-dimensional material. The gate layer comprises a gate formed above both, the first portion of the dielectric structure layer and the second portion of the dielectric structure layer. A device for use as an electronic component comprises a dielectric structure and a gate above the dielectric structure and a two-dimensional material between the dielectric structure and the gate. The dielectric structure is configured to expose the two-dimensional material to an inhomogeneous electric field.

公开(公告)号：US20170356869A1

公开(公告)日：2017-12-14

申请号：US15620868

申请日：2017-06-13

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Florian Bachl ,  Alexander Zoepfl ,  Guenther Ruhl

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/121 ,  G01N27/123 ,  G01N27/125 ,  G01N27/127 ,  G01N33/0027

Abstract: Various embodiments relate to a gas sensor, including: a carrier, an electrode structure; and a sensor layer in contact with the electrode structure, wherein the sensor layer includes or essentially consists of turbostratic graphite.

公开(公告)号：US20170278930A1

公开(公告)日：2017-09-28

申请号：US15464405

申请日：2017-03-21

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Hans-Joachim Schulze ,  Thomas Zimmer ,  Gunther Lippert

IPC: H01L29/16 ,  H01L29/04 ,  H01L21/02 ,  H01L21/56 ,  H01L21/18 ,  H01L21/265 ,  H01L21/324 ,  H01L29/165 ,  H01L21/78

CPC classification number: H01L29/1606 ,  H01L21/02002 ,  H01L21/02447 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/02658 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/78 ,  H01L29/04 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/165 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2221/68381

Abstract: A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.

公开(公告)号：US09716227B2

公开(公告)日：2017-07-25

申请号：US14587007

申请日：2014-12-31

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler ,  Guenther Ruhl

IPC: H01L51/00 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16 ,  C01B31/04

CPC classification number: H01L51/0048 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/0226 ,  C01B31/0461 ,  C01B32/184 ,  C01B32/188 ,  H01L21/02373 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02612 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7781 ,  H01L51/0002 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/932

Abstract: In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.

公开(公告)号：US20170186663A1

公开(公告)日：2017-06-29

申请号：US15381155

申请日：2016-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Peter Irsigler ,  Joachim Mahler ,  Guenther Ruhl ,  Hans-Joachim Schulze ,  Markus Zundel

IPC: H01L23/367 ,  H01L29/40 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L23/3672 ,  B82Y30/00 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3737 ,  H01L23/4275 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/417 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7813 ,  Y10S977/742 ,  Y10S977/753

Abstract: A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

公开(公告)号：US20170082502A1

公开(公告)日：2017-03-23

申请号：US15369057

申请日：2016-12-05

Applicant: Infineon Technologies AG

Inventor： Christian Kegler ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Guenther Ruhl ,  Joachim Mahler

IPC: G01K7/16 ,  H01L29/20 ,  H01L29/16

Abstract: Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

公开(公告)号：US09568447B2

公开(公告)日：2017-02-14

申请号：US15136047

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Florian Bachl

IPC: G01N27/12 ,  G01N27/403 ,  G01N33/00 ,  H01L51/00

CPC classification number: G01N27/127 ,  G01N27/125 ,  G01N27/403 ,  G01N33/0027 ,  H01L51/0003 ,  H01L51/0021

Abstract: A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.

Abstract translation: 流体传感器芯片包括包括无定形碳的隔离器基板，包括石墨的电导体和包括石墨烯或碳纳米管的活性材料。