公开(公告)号：US20050173260A1

公开(公告)日：2005-08-11

申请号：US11069202

申请日：2005-02-28

申请人： Bulent Basol ,  Homayoun Talieh

发明人： Bulent Basol ,  Homayoun Talieh

IPC分类号： H01L21/321 ,  B23H5/00

CPC分类号： H01L21/32115

摘要： A system for electrochemical mechanical polishing of a semiconductor wafer. The system includes a wafer carrier for holding the wafer, an electropolishing pad, and a showerhead for applying fluid towards the electrode. The electropolishing pad includes an electrode and a pad material layer attached to the electrode. The pad material layer includes openings to permit processing solution to wet both a conductive surface of the wafer and a surface of the electrode.

摘要翻译： 一种用于半导体晶片的电化学机械抛光的系统。 该系统包括用于保持晶片的晶片载体，电抛光垫和用于向该电极施加流体的喷头。 电抛光垫包括附着在电极上的电极和焊盘材料层。 衬垫材料层包括允许处理溶液润湿晶片的导电表面和电极表面的开口。

公开(公告)号：US20050016868A1

公开(公告)日：2005-01-27

申请号：US10830894

申请日：2004-04-23

申请人： Bulent Basol ,  Homayoun Talieh

发明人： Bulent Basol ,  Homayoun Talieh

IPC分类号： B23H3/00 ,  B23H5/08 ,  B24B21/04 ,  B24B21/22 ,  B24B37/04 ,  B24B47/04 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/12 ,  C25F7/00 ,  H01L21/288 ,  H01L21/321 ,  H01L21/768

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B21/04 ,  B24B21/22 ,  B24B37/04 ,  B24B37/205 ,  B24B47/04 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76877

摘要： Abstract of the DisclosureA system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

摘要翻译： 发明内容提供了晶片的导电表面的电化学机械抛光系统。 该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。 施加导电表面和电极之间的电位差并且在皮带垫和导电表面之间建立相对运动导致从导电表面去除材料。 通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

公开(公告)号：US06413388B1

公开(公告)日：2002-07-02

申请号：US09511278

申请日：2000-02-23

申请人： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

发明人： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

IPC分类号： C25D1700

CPC分类号： B24B37/26 ,  B23H5/08 ,  C25D17/001 ,  C25D17/14

摘要： An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.

摘要翻译： 提供一种能够辅助控制用于处理基板的电解质流动和电场分布的装置。 它包括具有预定形状的顶表面和底表面的刚性构件。 刚性构件包括多个通道，每个通道形成从顶表面到底表面的通道，并且每个通道允许电解质和电场流过其中。 垫通过紧固件附接到刚性构件。 衬垫还允许电解质和电场流过衬底。

公开(公告)号：US20060121725A1

公开(公告)日：2006-06-08

申请号：US11088324

申请日：2005-03-23

申请人： Bulent Basol ,  Homayoun Talieh

发明人： Bulent Basol ,  Homayoun Talieh

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76877

摘要： The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module. After the deposition, the wafer is moved to the second module of the system and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules can be positioned in a cluster tool. The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool.

摘要翻译： 本发明提供一种在系统的第一模块和第二模块中的晶片表面上形成平面铜结构的工艺。 在该过程中，通过在第一模块中利用电化学沉积工艺在晶片表面上形成铜层。 在沉积之后，将晶片移动到系统的第二模块，并且施加电化学机械抛光工艺以将铜层平坦化至预定厚度。 第一个和第二个模块可以放置在集群工具中。 随后通过选择性铜CMP和选择性阻挡层CMP处理晶片，其在另一个簇工具中进行。

公开(公告)号：US20060011485A1

公开(公告)日：2006-01-19

申请号：US11232026

申请日：2005-09-20

申请人： Bulent Basol ,  Cyprian Uzoh ,  Homayoun Talieh

发明人： Bulent Basol ,  Cyprian Uzoh ,  Homayoun Talieh

IPC分类号： C25D5/10 ,  C25D5/02

CPC分类号： C25D5/02 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.

公开(公告)号：US06958114B2

公开(公告)日：2005-10-25

申请号：US10093185

申请日：2002-03-05

申请人： Homayoun Talieh ,  Bulent Basol

发明人： Homayoun Talieh ,  Bulent Basol

IPC分类号： H01L21/00 ,  C25D5/54 ,  C25D5/00 ,  C25D5/20 ,  C25D7/00 ,  C25D7/12

CPC分类号： H01L21/6715 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67075

摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.

摘要翻译： 本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。 液体导体储存在储存器中并通过入口通道泵送到液体室。 液体导体被注入到液体室中，使得液体导体与工件的外表面接触。 还设有可充气管以防止液体导体到达工件的背面。 可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。 在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。 可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。 此外，本发明可用于从工件的周边溶解/蚀刻金属层。

公开(公告)号：US20050170080A1

公开(公告)日：2005-08-04

申请号：US10976534

申请日：2004-10-28

申请人： Bulent Basol ,  Gerald Marcyk ,  Homayoun Talieh

发明人： Bulent Basol ,  Gerald Marcyk ,  Homayoun Talieh

IPC分类号： C23C18/16 ,  C23C18/18 ,  H01L21/00 ,  H01L21/768 ,  H05K3/00 ,  C23C20/00

CPC分类号： H01L21/67155 ,  C23C18/1632 ,  C23C18/1692 ,  C23C18/1896 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864

摘要： A system and method for processing, in a single process tool, a surface of a semiconductor workpiece having a barrier layer and a conductor. The single process tool includes a first planarization module, a second planarization module, and an electroless deposition module. The conductor is planarized in the first planarization module until a portion of the barrier layer is exposed. In the second planarization module, the exposed portion of the barrier layer is removed from the surface. The workpiece is then moved to the electroless plating module, where a cap layer is formed on the planarized conductor.

摘要翻译： 一种用于在单个工艺工具中处理具有阻挡层和导体的半导体工件的表面的系统和方法。 单一工艺工具包括第一平面化模块，第二平面化模块和无电沉积模块。 导体在第一平坦化模块中被平坦化，直到暴露出阻挡层的一部分。 在第二平坦化模块中，阻挡层的暴露部分从表面去除。 然后将工件移动到化学镀模块，其中在平坦化导体上形成覆盖层。

公开(公告)号：US20050145489A1

公开(公告)日：2005-07-07

申请号：US11054053

申请日：2005-02-08

申请人： Bulent Basol ,  Cyprian Uzoh ,  Halit Yakupoglu ,  Homayoun Talieh

发明人： Bulent Basol ,  Cyprian Uzoh ,  Halit Yakupoglu ,  Homayoun Talieh

IPC分类号： B23H5/08 ,  C25F3/14 ,  H01L21/288 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  C25B9/00 ,  C25D17/00

CPC分类号： H01L21/32115 ,  B23H5/08 ,  C25F3/14 ,  H01L21/2885 ,  H01L21/32134 ,  H01L21/7684

摘要： A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

公开(公告)号：US20050133380A1

公开(公告)日：2005-06-23

申请号：US10996165

申请日：2004-11-22

申请人： Bulent Basol ,  Cyprian Uzoh ,  Paul Lindquist ,  Homayoun Talieh

发明人： Bulent Basol ,  Cyprian Uzoh ,  Paul Lindquist ,  Homayoun Talieh

IPC分类号： B23H5/08 ,  C25D5/22 ,  C25D7/12 ,  C25F3/14 ,  C25F7/00 ,  H01L21/3213 ,  B23H3/00

CPC分类号： C25D17/001 ,  B23H5/08 ,  C25D5/22 ,  C25F3/14 ,  C25F7/00 ,  H01L21/32134

摘要： The present invention applies an electrochemical etching solution to a material layer, preferably a metal layer, disposed on a workpiece, in the presence of a current. This electrochemical etching solution supplies to the material on the substrate surface the species to form an intermediate compound on the surface that can be more easily mechanically removed as intermediate compound fragments than the material. By removing the intermediate compound fragments, the process allows more efficient use of the supplied current to form another layer of intermediate compound that can also be mechanically removed, rather than using the current to result in another compound on the surface of the material that eventually dissolves into the solution. In another aspect of the invention, such intermediate compound particulates are externally generated and used to mechanically remove the surface layer of the material. Such intermediate particulates do not contaminate, and thus allow for more efficient material removal, as well as plating to occur within the same chamber, if desired.

摘要翻译： 本发明在存在电流的情况下将电化学蚀刻溶液应用于设置在工件上的材料层，优选金属层。 该电化学蚀刻溶液向基材表面上的材料提供物质，以在表面上形成中间体化合物，其可以比材料作为中间体化合物片段更容易地机械去除。 通过去除中间体化合物片段，该方法允许更有效地使用所提供的电流以形成也可机械去除的另一层中间体化合物，而不是使用电流在材料表面上产生最终溶解的另一种化合物 进入解决方案。 在本发明的另一方面，这种中间体化合物颗粒是外部生成的并用于机械地去除材料的表面层。 如果需要，这样的中间颗粒不会污染，因此允许更有效的材料去除以及电镀发生在相同的室内。

公开(公告)号：US06354916B1

公开(公告)日：2002-03-12

申请号：US09544558

申请日：2000-04-06

申请人： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

发明人： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

IPC分类号： B24B100

CPC分类号： B24B37/042 ,  C25D3/38 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A modified plating solution that can be used to electroplate a high quality conductive material that can be effectively polished and planarized includes (1) a solvent, (2) an ionic species of the conductive material to be deposited, (3) at least one additive to improve electrical and structural properties, and (4) a modifying agent.