公开(公告)号：US08450191B2

公开(公告)日：2013-05-28

申请号：US13089966

申请日：2011-04-19

申请人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

发明人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

IPC分类号： H01L21/20 ,  H01L21/3205

CPC分类号： H01L21/0262 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/28556

摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.

摘要翻译： 描述形成多晶硅层的方法。 所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。 所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。 偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。 当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

公开(公告)号：US08414747B2

公开(公告)日：2013-04-09

申请号：US11941263

申请日：2007-11-16

申请人： Bo Qi ,  Young S. Lee

发明人： Bo Qi ,  Young S. Lee

IPC分类号： C23C14/34

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02274 ,  H01L21/31612

摘要： Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio. A second high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a second deposition/sputter ratio. The second deposition/sputter ratio is less than the first deposition/sputter ratio. Each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.

摘要翻译： 提供了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 含硅气体，含氧气体和流动气体流入衬底处理室。 流动气体的平均分子量小于5 amu。 由含硅气体，含氧气体和流动气体形成第一高密度等离子体，以将第一部分氧化硅膜沉积在衬底上并且在间隙内，同时具有同时存在的第一沉积工艺 具有由第一沉积/溅射比限定的相对贡献的沉积和溅射部件。 由含硅气体，含氧气体和流动气体形成第二高密度等离子体，以将第二部分的氧化硅膜沉积在衬底上并在间隙内，同时具有同时存在的第二沉积工艺 沉积和溅射组分具有由第二沉积/溅射比定义的相对贡献。 第二沉积/溅射比小于第一沉积/溅射比。 第一和第二沉积/溅射比率中的每一个被定义为净沉积速率和覆盖溅射速率之和与覆盖溅射速率的比率。

公开(公告)号：US20120150578A1

公开(公告)日：2012-06-14

申请号：US12962782

申请日：2010-12-08

申请人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

发明人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

IPC分类号： G06Q10/00 ,  H04B15/00 ,  G06Q30/00

CPC分类号： G06Q10/00 ,  G06Q10/06311 ,  G06Q30/00 ,  G06Q30/0241

摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.

摘要翻译： 可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。 然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。 声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。 声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。 例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。

公开(公告)号：US07910491B2

公开(公告)日：2011-03-22

申请号：US12437256

申请日：2009-05-07

申请人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

发明人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

IPC分类号： H01L21/302

CPC分类号： H01L21/76224 ,  H01L21/02112 ,  H01L21/02247 ,  H01L21/02304 ,  H01L21/318

摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

摘要翻译： 描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。 氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。 电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。 氧化硅再次沉积在沟槽内以基本上填充沟槽。

公开(公告)号：US07867921B2

公开(公告)日：2011-01-11

申请号：US12204503

申请日：2008-09-04

申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.

摘要翻译： 通过向处理室提供季节前体的流动来调节处理室。 通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。 使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。 将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。 在基板的顺序转印之间清洁处理室。

公开(公告)号：US20100095979A1

公开(公告)日：2010-04-22

申请号：US12508381

申请日：2009-07-23

申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

IPC分类号： B08B7/00

CPC分类号： B08B7/0035 ,  C23C16/4405

摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

公开(公告)号：US07678715B2

公开(公告)日：2010-03-16

申请号：US11962674

申请日：2007-12-21

申请人： Hemant P. Mungekar ,  Jing Wu ,  Young S. Lee ,  Anchuan Wang

发明人： Hemant P. Mungekar ,  Jing Wu ,  Young S. Lee ,  Anchuan Wang

IPC分类号： H01L21/00 ,  C23C14/08

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

摘要： The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.

摘要翻译： 本发明涉及在低于600℃的衬底温度下使用高密度等离子体化学气相沉积技术在衬底上沉积低湿蚀刻速率的氮化硅膜的方法。该方法还涉及维持相对较高的氮与硅比例 等离子体和低过程压力。

公开(公告)号：US07629271B1

公开(公告)日：2009-12-08

申请号：US12233881

申请日：2008-09-19

申请人： Jing Wu ,  Anchuan Wang ,  Robert T. Chen ,  Young S. Lee

发明人： Jing Wu ,  Anchuan Wang ,  Robert T. Chen ,  Young S. Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/0218 ,  C23C16/26

摘要： A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.

摘要翻译： 提供了一种在衬底上形成场效应晶体管上的压缩膜的方法。 场效应晶体管包括在衬底内的漏极和源极之间的沟道区域。 沟道区域由栅电极控制。 该方法包括在场效应晶体管上沉积类金刚石碳（DLC）膜，以通过产生包括前体气体和添加气体的处理气体的等离子体来压缩沟道区域，其中前体基本上仅包含C2H2和添加剂 气体包括Ar。

公开(公告)号：US20090068853A1

公开(公告)日：2009-03-12

申请号：US12204523

申请日：2008-09-04

申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

IPC分类号： H01L21/314

CPC分类号： C23C16/045 ,  C23C16/4408 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76229

摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

摘要翻译： 公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。 此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。 这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在部分已被回蚀后终止流动卤素前体。 此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。 此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

公开(公告)号：US20080029484A1

公开(公告)日：2008-02-07

申请号：US11492639

申请日：2006-07-25

申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Young S. Lee

发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Young S. Lee

IPC分类号： C23F1/00 ,  G06F19/00 ,  H01L21/306 ,  H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32972 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/32935

摘要： The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.

摘要翻译： 为了防止在衬底上沉积不可接受量的污染物，可以在诸如硅晶片的衬底的处理期间监测等离子体中各种污染物的浓度。 可以通过诸如光发射光谱仪（OES）的工具来检测和测量从等离子体通过处理室中的处理室中的窗口发射的辐射，并且可以按顺序分析对应于各种污染物的光谱中的峰的相对强度 以确定污染物浓度。 在一个实施例中，在等离子体化学气相沉积（CVD）工艺期间监测等离子体中铝的浓度，以确保所生产的装置中的铝量低于最大阈值量。