Semiconductor device and process for production thereof
    51.
    发明授权
    Semiconductor device and process for production thereof 失效
    半导体装置及其制造方法

    公开(公告)号:US06803601B2

    公开(公告)日:2004-10-12

    申请号:US10140424

    申请日:2002-05-06

    申请人: Setsuo Nakajima

    发明人: Setsuo Nakajima

    IPC分类号: H01L2904

    摘要: An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable. The TFT of crystalline semiconductor film has the gate electrode formed from a first gate electrode 113 and a second gate electrode in close contact with said first gate electrode and gate insulating film. The LDD is formed by ion doping using said first gate electrode as a mask, and the source-drain region is formed using said second gate electrode as a mask. After that the second gate electrode in the desired region is selectively removed. In this way it is possible to form LDD region which overlaps with the second gate electrode.

    摘要翻译: 本发明的目的是提供一种其中栅电极与LDD区重叠的新结构的TFT和其中栅电极不与LDD区重叠的结构的TFT。 TFT由结晶半导体膜制成,高度可靠。晶体半导体膜的TFT具有由第一栅电极113和与所述第一栅电极和栅极绝缘膜紧密接触的第二栅极形成的栅电极。 通过使用所述第一栅电极作为掩模的离子掺杂形成LDD,并且使用所述第二栅电极作为掩模形成源极 - 漏极区。 之后,选择性地去除所需区域中的第二栅电极。 以这种方式,可以形成与第二栅电极重叠的LDD区域。

    Thin-film transistor having lightly-doped drain structure
    52.
    发明授权
    Thin-film transistor having lightly-doped drain structure 有权
    具有轻掺杂漏极结构的薄膜晶体管

    公开(公告)号:US06737717B2

    公开(公告)日:2004-05-18

    申请号:US10084428

    申请日:2002-02-28

    IPC分类号: H01L2976

    摘要: There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same. In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.

    摘要翻译: 提供一种半导体器件,其包括由具有高再现性的LDD结构的半导体元件形成的半导体电路,提高TFT的稳定性并提供高生产率及其制造方法。为了实现该目的, 根据与电路配置相关的要求适当地确定第二掩模,以便可以在TFT的沟道形成区域的两侧或一侧上形成期望的LDD区域。

    Method for producing semiconductor device
    54.
    发明授权
    Method for producing semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US06479329B2

    公开(公告)日:2002-11-12

    申请号:US09853588

    申请日:2001-05-14

    IPC分类号: H01L2100

    摘要: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

    摘要翻译: 在制造薄膜晶体管时,在基板上形成非晶硅膜之后,通过用包含镍作为金属元素的溶液(乙酸镍溶液)旋涂形成硅化镍层,其加速(促进)硅的结晶 并通过热处理。 选择性地将硅化镍层图案化以形成岛状硅化镍层。 非晶硅膜被图案化。 在移动激光器时照射激光,使得从形成硅化镍层的区域发生晶体生长,并且获得与单晶相同的区域(单畴区域)。

    Using a temporary substrate to attach components to a display substrate
when fabricating a passive type display device
    55.
    发明授权
    Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device 失效
    当制造无源型显示装置时,使用临时基板将部件附着到显示基板

    公开(公告)号:US6118502A

    公开(公告)日:2000-09-12

    申请号:US62873

    申请日:1998-04-20

    摘要: A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

    摘要翻译: 一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。 驱动电路占用的空间比以前少。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路(棒状晶体)作为驱动电路。 电路接合到显示装置的一个基板,然后电路的端子与显示装置的端子连接。 随后,驱动电路的基板被去除。 这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多,因为导线不是以复杂的方式铺设。 驱动电路可以形成在诸如玻璃基板的大面积基板上。 显示装置可以形成在具有高抗冲击性的轻质材料上,例如塑料基板。 因此,可以获得具有优异便携性的显示装置。

    Solar cell and method of forming the same
    57.
    发明授权
    Solar cell and method of forming the same 失效
    太阳能电池及其形成方法

    公开(公告)号:US5348589A

    公开(公告)日:1994-09-20

    申请号:US996399

    申请日:1992-12-23

    摘要: A manufacturing method and an improved structure for solar cells are described. A transparent conductive film and a photoelectric conversion layer are laminated on a flexible transparent substrate, and thereafter the laminate is divided by a first groove formed by laser scribing. A second groove is also formed at the same time in parallel to the first groove. The first groove is filled with an insulating material. An insulating strip is formed in parallel with the first groove. A reflective conductive film is then coated over the structure in order to make electric contact with the transparent conductive film. Finally, the reflective conductive film is divided by a third groove formed along the insulating strip.

    摘要翻译: 对太阳能电池的制造方法和改进的结构进行说明。 将透明导电膜和光电转换层层压在柔性透明基板上,然后通过激光划线形成的第一槽分隔层叠体。 同时与第一凹槽平行地形成第二凹槽。 第一槽被绝缘材料填充。 绝缘条与第一槽平行地形成。 然后在结构上涂覆反射导电膜,以便与透明导电膜电接触。 最后,反射导电膜被沿着绝缘条形成的第三凹槽分开。

    Edible laminar sheet material and method of preparation
    58.
    发明授权
    Edible laminar sheet material and method of preparation 失效
    食用层状片材及其制备方法

    公开(公告)号:US4279932A

    公开(公告)日:1981-07-21

    申请号:US32705

    申请日:1979-04-23

    IPC分类号: A23L1/00 A23P1/08

    CPC分类号: A23P20/20

    摘要: A food product comprising a laminar sheet material comprising two edible sheets of different swelling properties, the two edible sheets being bonded together along at least a portion of the surfaces of the sheets. At least one of the sheets is capable of swelling and being deformed in water, and the laminar sheet material is so deformed.

    摘要翻译: 一种食品,其包含层状片材料,其包含两种不同溶胀特性的可食用片材,所述两种可食用片材沿片材的至少一部分表面结合在一起。 至少一个片材能够在水中膨胀并变形,并且片状片材变形。

    Method for manufacturing a semiconductor device

    公开(公告)号:US08389342B2

    公开(公告)日:2013-03-05

    申请号:US12719897

    申请日:2010-03-09

    申请人: Setsuo Nakajima

    发明人: Setsuo Nakajima

    IPC分类号: H01L21/336

    摘要: A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic. In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.