公开(公告)号：US20090155580A1

公开(公告)日：2009-06-18

申请号：US12225389

申请日：2007-04-05

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/02 ,  B32B9/00 ,  B32B1/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  H01L33/0075 ,  Y10T428/265 ,  Y10T428/266

摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.

摘要翻译： 提供适合于制造电子器件或光学器件的高品质的半导体衬底。 本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素 在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

公开(公告)号：US20090038539A1

公开(公告)日：2009-02-12

申请号：US12234799

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B29/406

摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

摘要翻译： 称量含有容易氧化的材料的原料混合物。 将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热 熔化固化物从而产生溶液的装置。 从溶液中生长单晶。

公开(公告)号：US20100093157A1

公开(公告)日：2010-04-15

申请号：US12448207

申请日：2007-12-10

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。

公开(公告)号：US20090169444A1

公开(公告)日：2009-07-02

申请号：US12225716

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： B01J19/00

CPC分类号： C30B9/00 ,  C30B29/403

摘要： An object of the invention is to prevent, in the flux method, diffusion of substances that constitute the atmosphere of the outer vessel into the reactor.The apparatus for producing a group III nitride based compound semiconductor, the apparatus including a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, and an outer vessel for accommodating the reactor and the heating apparatus, characterized in that diffusion of substances that constitute the atmosphere of the outer vessel into the reactor is prevented.

摘要翻译： 本发明的目的是在助焊剂方法中防止构成外容器气氛的物质扩散到反应器中。 用于制造III族氮化物基化合物半导体的装置，该装置包括在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置和用于 容纳反应器和加热装置，其特征在于防止构成外部容器的气体的物质扩散到反应器中。

公开(公告)号：US09017479B2

公开(公告)日：2015-04-28

申请号：US12181402

申请日：2008-07-29

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B35/00 ,  C30B11/04 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/40 ,  C30B7/00

CPC分类号： C30B9/10 ,  C30B7/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064 ,  Y10T117/1096

摘要： The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

摘要翻译： 该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器; 用于存储内部容器的加热容器，包括加热元件的加热容器，设置有加热元件的容器主体和与容器主体组合的盖子; 以及用于储存所述加热容器并用于装入至少包含氮气的气体的压力容器。 盖子还具有与容器主体相对于水平面倾斜的配合表面。

公开(公告)号：US08657955B2

公开(公告)日：2014-02-25

申请号：US12462429

申请日：2009-08-03

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B11/02

CPC分类号： C30B29/406 ,  C30B9/12

摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

摘要翻译： 提供一种通过助熔剂生长氮化镓单晶的熔融组合物。 熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

公开(公告)号：US08123856B2

公开(公告)日：2012-02-28

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US20090000542A1

公开(公告)日：2009-01-01

申请号：US12192428

申请日：2008-08-15

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B19/02

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1024

摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

摘要翻译： 公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。 该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B25/12

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。