公开(公告)号：US20060121742A1

公开(公告)日：2006-06-08

申请号：US11006438

申请日：2004-12-07

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/02052 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/823462 ,  H01L29/495 ,  H01L29/513

摘要： A method for making a semiconductor device is described. That method comprises applying an atomic layer chemical vapor deposition process to form a high-k gate dielectric layer directly on a hydrophobic surface of a substrate. The atomic layer chemical vapor deposition process initiates growth of the high-k gate dielectric layer in less than about twenty growth cycles.

摘要翻译： 描述制造半导体器件的方法。 该方法包括应用原子层化学气相沉积工艺以在衬底的疏水表面上直接形成高k栅介质层。 原子层化学气相沉积工艺在低于约20个生长周期中引发高k栅极电介质层的生长。

公开(公告)号：US20060091483A1

公开(公告)日：2006-05-04

申请号：US11242807

申请日：2005-10-03

申请人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Suman Datta ,  Robert Chau

发明人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L21/28097 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, forming a barrier layer on the high-k gate dielectric layer, and forming a fully silicided gate electrode on the barrier layer.

公开(公告)号：US20060079005A1

公开(公告)日：2006-04-13

申请号：US10964464

申请日：2004-10-12

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC分类号： H01L21/00 ,  H01L21/8238

CPC分类号： H01L21/823462

摘要： A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface.

摘要翻译： 描述制造半导体器件的方法。 该方法包括将基底的疏水表面转化为亲水表面，并在亲水表面上形成高k栅介质层。

公开(公告)号：US20060046399A1

公开(公告)日：2006-03-02

申请号：US10925566

申请日：2004-08-25

申请人： Nick Lindert ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau ,  Mark Bohr ,  Anand Murthy

发明人： Nick Lindert ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau ,  Mark Bohr ,  Anand Murthy

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656

摘要： A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the process of forming a trench into the substrate, a portion of the source drain region is removed. Then the substrate is filled back up with an epitaxial material and a new gate structure is formed thereover. As a result, more abrupt source drain junctions may be achieved.

摘要翻译： 栅极结构可以用作掩模以形成源区和漏区。 然后可以去除栅极结构以形成间隙，并且可以在间隙中形成间隔物以限定沟槽。 在将沟槽形成衬底的过程中，去除源极漏极区的一部分。 然后用外延材料填充衬底，并在其上形成新的栅极结构。 结果，可以实现更突然的源极漏极结。

公开(公告)号：US20060017098A1

公开(公告)日：2006-01-26

申请号：US10896124

申请日：2004-07-20

申请人： Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Justin Brask ,  Suman Datta ,  Robert Chau

发明人： Mark Doczy ,  Jack Kavalieros ,  Matthew Metz ,  Justin Brask ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/76

CPC分类号： H01L21/28194 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide.

公开(公告)号：US20050285213A1

公开(公告)日：2005-12-29

申请号：US10877836

申请日：2004-06-24

申请人： Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau

发明人： Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28247 ,  H01L21/26586 ,  H01L21/28238 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553

摘要： In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have a vertical portion that may be exposed to a silicon ion implantation. As a result of the implantation, the dielectric constant of a vertical portion may be reduced, reducing fringe capacitance.

摘要翻译： 在金属栅极更换工艺中，杯状栅极金属氧化物电介质可以具有可暴露于硅离子注入的垂直部分。 作为注入的结果，可以减小垂直部分的介电常数，减少边缘电容。

公开(公告)号：US20050250258A1

公开(公告)日：2005-11-10

申请号：US10839077

申请日：2004-05-04

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/8238 ,  H01L21/335

CPC分类号： H01L21/823842

摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and forming a masking layer on a first part of the high-k gate dielectric layer. After forming a first metal layer on the masking layer and on an exposed second part of the high-k gate dielectric layer, the masking layer is removed. A second metal layer is then formed on the first metal layer and on the first part of the high-k gate dielectric layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成高k栅极电介质层，并在高k栅极电介质层的第一部分上形成掩模层。 在掩模层和高k栅极电介质层的暴露的第二部分上形成第一金属层之后，去除掩模层。 然后在第一金属层和高k栅极电介质层的第一部分上形成第二金属层。

公开(公告)号：US20080090397A1

公开(公告)日：2008-04-17

申请号：US11986510

申请日：2007-11-21

申请人： Justin Brask ,  Brian Dovle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Dovle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L21/3205

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

摘要翻译： 要求保护半导体器件，该半导体器件具有形成在绝缘衬底上的具有顶表面和第一和第二横向相对侧壁的半导体本体。 在半导体本体的顶表面和半导体本体的第一和第二横向相对的侧壁上形成栅极电介质。 然后在半导体主体的顶表面上的栅电介质上形成栅电极，并且与半导体本体的第一和第二横向相对的侧壁上的栅电介质相邻。 栅电极包括直接与栅介电层相邻形成的金属膜。 然后在栅电极的相对侧上的半导体本体中形成一对源区和漏区。

公开(公告)号：US20060138553A1

公开(公告)日：2006-06-29

申请号：US11362453

申请日：2006-02-24

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20070040223A1

公开(公告)日：2007-02-22

申请号：US11207051

申请日：2005-08-17

申请人： Suman Datta ,  Justin Brask ,  Jack Kavalieros ,  Brian Doyle ,  Gilbert Dewey ,  Mark Doczy ,  Robert Chau

发明人： Suman Datta ,  Justin Brask ,  Jack Kavalieros ,  Brian Doyle ,  Gilbert Dewey ,  Mark Doczy ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/42376 ,  H01L21/28114 ,  H01L29/42384 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78654

摘要： Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.

摘要翻译： 本发明的实施例提供一种具有金属栅极，高k栅极电介质层，金属栅极下方距离的源极/漏极延伸部以及金属栅极侧面中的横向底切的器件。