公开(公告)号：US08124497B2

公开(公告)日：2012-02-28

申请号：US12955222

申请日：2010-11-29

申请人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

发明人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC分类号： H01L21/762

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

摘要翻译： 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US20120003824A1

公开(公告)日：2012-01-05

申请号：US13019146

申请日：2011-02-01

申请人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

发明人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC分类号： H01L21/20

CPC分类号： H01L21/302 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664

摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

摘要翻译： 提供了一种制造氮化镓（GaN）晶片的方法。 在根据实施例的制造GaN晶片的方法中，在衬底上形成蚀刻停止层，并且在蚀刻停止层上形成第一GaN层。 用硅烷气蚀刻第一GaN层的一部分，在蚀刻的第一GaN层上形成第二GaN层。 在第二GaN层上形成第三GaN层。

公开(公告)号：US08054235B2

公开(公告)日：2011-11-08

申请号：US12433180

申请日：2009-04-30

申请人： Sang-Ha Lee ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

发明人： Sang-Ha Lee ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

IPC分类号： H01Q7/08

CPC分类号： H01Q7/06 ,  H01Q7/08 ,  H01Q23/00

摘要： An active magnetic antenna with a ferrite core having a winding is provided, forming a frame magnetic antenna which is connected with a low-noise transistor, to amplify a signal of the frame magnetic antenna. A base of the transistor is connected directly to one contact of the winding, and a second contact of the winding is capable of shifting a voltage of the base of the transistor. The impedance of the frame magnetic antenna is adjusted as a complex conjugate with an impedance of the base of the transistor of the low-noise amplifier, and the winding eliminates its own resonances.

摘要翻译： 提供具有绕组的铁氧体磁芯的有源磁性天线，形成与低噪声晶体管连接的框架磁性天线，以放大帧磁性天线的信号。 晶体管的基极直接连接到绕组的一个触点，并且绕组的第二触点能够移动晶体管的基极的电压。 框架磁性天线的阻抗被调整为与低噪声放大器的晶体管的基极的阻抗的复共轭，并且绕组消除了它自己的谐振。

公开(公告)号：US20110140719A1

公开(公告)日：2011-06-16

申请号：US12872574

申请日：2010-08-31

申请人： HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

发明人： HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

IPC分类号： G01R27/26

CPC分类号： H01J37/32935 ,  H01J37/32174

摘要： A method of monitoring a semiconductor process is provided. The method includes preparing a process chamber including first and second electrodes spaced apart from and facing each other, and connecting the first electrode to a ground and connecting the second electrode to a radio frequency power source. An impedance in the process chamber is measured using a voltage value and a current value at the second electrode. The consumption amount of consumables in the process chamber is checked using the impedance. Varied process conditions are adjusted within an initial set range.

摘要翻译： 提供了一种监测半导体工艺的方法。 该方法包括制备包括彼此间隔开并面对彼此的第一和第二电极以及将第一电极连接到地面并将第二电极连接到射频电源的处理室。 使用第二电极处的电压值和电流值来测量处理室中的阻抗。 使用阻抗检查处理室中的消耗品的消耗量。 不同的工艺条件在初始设定范围内进行调整。

公开(公告)号：US20110092055A1

公开(公告)日：2011-04-21

申请号：US12967897

申请日：2010-12-14

申请人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

发明人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

摘要翻译： 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US07911098B2

公开(公告)日：2011-03-22

申请号：US12638551

申请日：2009-12-15

申请人： Kyoung-Ho Lee ,  Jun-Kun Choi ,  Jae-woo Jun ,  Hwa-Young Oh ,  Kwang-Hyung Lee ,  Je-Hyun Bang ,  Seok-Jun Park ,  Yong-Jin Kim ,  Seung-Heon Han

发明人： Kyoung-Ho Lee ,  Jun-Kun Choi ,  Jae-woo Jun ,  Hwa-Young Oh ,  Kwang-Hyung Lee ,  Je-Hyun Bang ,  Seok-Jun Park ,  Yong-Jin Kim ,  Seung-Heon Han

IPC分类号： H02K7/06 ,  H02K35/00 ,  H02K33/00 ,  H02K11/00

CPC分类号： B06B1/045 ,  H02K33/16

摘要： A linear vibrator is disclosed. The linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively, and a plurality of leaf springs, which are interposed between the magnet and the base. Here, the plurality of leaf springs face one another and are coupled to one another Thus, the linear vibrator can increase the range of vibration displacement in a structure and increase the amount of vibration in the linear vibrator. Also, even though the linear vibrator becomes thinner, the range of displacement can be increased because the weight is vibrated horizontally.

摘要翻译： 公开了线性振动器。 线性振动器包括基座，耦合到基座的线圈单元，耦合到线圈单元的磁体，使得磁体可以相对移动，并且多个板簧插入在磁体和 的基地。 这里，多个板簧彼此面对并且彼此耦合。因此，线性振动器可以增加结构中的振动位移的范围并增加线性振动器中的振动量。 此外，即使线性振动器变薄，由于重量水平振动，因此可以增加位移范围。

公开(公告)号：US07816241B2

公开(公告)日：2010-10-19

申请号：US12177917

申请日：2008-07-23

申请人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

发明人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

IPC分类号： H01L21/28

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

公开(公告)号：US20100156272A1

公开(公告)日：2010-06-24

申请号：US12490163

申请日：2009-06-23

申请人： Yong-Jin Kim ,  Jin-Kyoung Yoo ,  Young-Joon Hong ,  Gyu-Chul Yi ,  Chul-Ho Lee

发明人： Yong-Jin Kim ,  Jin-Kyoung Yoo ,  Young-Joon Hong ,  Gyu-Chul Yi ,  Chul-Ho Lee

IPC分类号： H01J1/62 ,  H01J1/14 ,  H01J9/02 ,  H01J9/20

CPC分类号： H01J31/127 ,  H01J29/04 ,  H01J2201/30469

摘要： A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.

摘要翻译： 公开了场致发射器件，场致发射显示器件及其制造方法。 场致发射器件包括：i）衬底; ii）位于基底上的电极; iii）掩模层，其位于所述电极上并且包括一个或多个开口; 以及iv）多个纳米结构，其经由所述开口定位在所述电极上并且形成为径向延伸。 可以施加多个纳米结构以在从电极接收电压时发射电子。

公开(公告)号：US07705973B2

公开(公告)日：2010-04-27

申请号：US12151516

申请日：2008-05-07

申请人： Keun-Hee Bai ,  Yong-Jin Kim

发明人： Keun-Hee Bai ,  Yong-Jin Kim

IPC分类号： G01J3/443 ,  H05H1/00

CPC分类号： G01J3/443 ,  H01J37/32935 ,  H01J37/32972

摘要： Provided are methods and systems for monitoring a state of a plasma chamber. In the method, an optical characteristic of plasma generated in a plasma chamber including a window is measured in a predetermined measurement wavelength band. A process status index (PSI) is extracted from the measured optical characteristic. A state of the plasma chamber is evaluated by analyzing the extracted PSI. The optical characteristic of the plasma is measured in the predetermined measurement wavelength band in which a transmittance of light passing through the window is substantially independent of a wavelength of the light.

摘要翻译： 提供了用于监测等离子体室的状态的方法和系统。 在该方法中，在预定的测量波长带中测量在包括窗口的等离子体室中产生的等离子体的光学特性。 从测量的光学特性中提取过程状态指数（PSI）。 通过分析所提取的PSI来评估等离子体室的状态。 在通过窗口的光的透射率基本上与光的波长无关的预定测量波长带中测量等离子体的光学特性。

公开(公告)号：US07443405B2

公开(公告)日：2008-10-28

申请号：US10800387

申请日：2004-03-12

申请人： Yong-Jin Kim

发明人： Yong-Jin Kim

IPC分类号： G09G5/10 ,  G09G3/28

CPC分类号： G09G3/2803 ,  G09G3/2029 ,  G09G3/2946 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/0271 ,  G09G2320/0606 ,  G09G2320/0626

摘要： A gray-scale representation method for a plasma display panel, which method includes arranging, in time sequence, a plurality of subfields each having a brightness weight and achieving gray-scale representation by a combination of the subfields, each subfield including an address period and a sustain period. In the gray-scale representation method, the number of sustain pulses for each subfield is determined so that a light generated from the difference of the number of sustain pulses between two adjacent gray scales can be greater than a light discharged in the address period, when the number of subfields for the higher one of the two adjacent gray scales is less than that for the lower one. The reversion of gray scales that occurs when the address light is increased as high as the sustain light can be eliminated to achieve correct gray-scale representation. A smoother gray-scale representation can be achieved with reduced power consumption by adjusting the difference of the number of sustain pulses between the two adjacent gray scales in consideration of the address light.

摘要翻译： 一种用于等离子体显示面板的灰度表示方法，该方法包括按时间顺序排列多个子场，每个子场具有亮度权重，并通过子场的组合实现灰度表示，每个子场包括地址周期和 维持期 在灰阶表示方法中，确定每个子场的维持脉冲数，使得从两个相邻灰度级之间的维持脉冲数的差异产生的光可以大于在寻址周期中放出的光，当 两个相邻灰度中较高的一个灰度级的子场数小于下一个灰度级的子场数。 当可以消除地址光增加到持续光的高度时发生的灰度的反转，以获得正确的灰度级表示。 考虑到地址光，可以通过调整两个相邻灰度级之间的维持脉冲数量的差异来降低功耗，从而实现更平滑的灰度表示。