公开(公告)号：US20120171790A1

公开(公告)日：2012-07-05

申请号：US13413973

申请日：2012-03-07

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01L33/60

CPC classification number: H01S5/18311 ,  H01S5/0286 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18347 ,  Y10S257/918

Abstract: A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

Abstract translation: 表面发射激光器包括层叠在基板上的下多层反射镜，有源层和上多层反射镜。 使用第一沟槽结构在有源层的上方或下方形成具有第一导电区域和第一绝缘区域的第一电流限制层。 使用第二沟槽结构在第一电流限制层的上方或下方形成具有第二导电区域和第二绝缘区域的第二电流限制层。 第一和第二沟槽结构从上多层反射镜的顶表面延伸到衬底，使得第二沟槽结构围绕第一沟槽结构。 当在基板的面内方向上观察表面发射激光时，第一导电区域和第一绝缘区域之间的边界设置在第二导电区域的内部。

公开(公告)号：US20120093188A1

公开(公告)日：2012-04-19

申请号：US13273539

申请日：2011-10-14

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/026

CPC classification number: H01S5/18391 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/34326

Abstract: There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

Abstract translation: 提供了允许远场图案（FFP）重心的方向从提供表面发射激光器的基板的法线方向倾斜的表面发射激光器，包括：基板; 下反射镜，有源层，叠层在基板上的上反射镜; 以及表面浮雕结构，其位于上反射镜的发光表面的上部，所述表面浮雕结构由允许从表面发射激光器发射的至少一些光束透射的材料制成，多个区域 在基板的法线方向上具有与衬底的面内方向上的其他区域接触的预定光学厚度，并且基板的面内方向上的光学厚度的分布不对称于中心 发光区域的轴线。

公开(公告)号：US20120032143A1

公开(公告)日：2012-02-09

申请号：US13273165

申请日：2011-10-13

Applicant: Tetsuya Takeuchi ,  Tatsuro Uchida ,  Mitsuhiro Ikuta

Inventor： Tetsuya Takeuchi ,  Tatsuro Uchida ,  Mitsuhiro Ikuta

IPC: H01L33/04 ,  H01L33/26

CPC classification number: H01L33/34 ,  H01L33/06 ,  H01L33/16

Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract translation: 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括：具有电位限制结构的发射层，包括：包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域，并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料，其中：所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。

公开(公告)号：US07965755B2

公开(公告)日：2011-06-21

申请号：US12582796

申请日：2009-10-21

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00 ,  H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/0655 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/2086 ,  H01S5/34326

Abstract: Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer.

Abstract translation: 提供了能够降低在单横模中上反射镜的反射率的效果的高输出表面发射激光器。 表面发射激光器包括层叠在基板上的多个半导体层，其包括下半导体多层反射镜，有源层和上半导体多层反射镜，其中下半导体多层反射镜或上半导体多层反射镜包括第一半导体层 具有由平行于基板的方向配置的高折射率部分和低折射率部分构成的二维光子晶体结构，其中层压在第一半导体层上的第二半导体层包括到达低折射率部分的微孔 微孔在与基板平行的方向上的横截面小于形成在第一半导体层中的低折射率部分的横截面。

公开(公告)号：US07924901B2

公开(公告)日：2011-04-12

申请号：US12023872

申请日：2008-01-31

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/20 ,  H01S5/026 ,  H01S5/183

CPC classification number: H01S5/18 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/105 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/2027 ,  H01S5/34326

Abstract: A surface emitting laser comprises an underlayer, an active layer formed on the underlayer, a slab layer formed on the active layer and having a photonic crystal structure optically combined with the active layer, and a metal thin film formed on the slab layer and having a periodic fine structure; and enabling taking-out of the light beam propagating in a layer-plane direction in the slab layer through the metal thin film.

Abstract translation: 表面发射激光器包括底层，形成在底层上的有源层，形成在有源层上并具有与有源层光学组合的光子晶体结构的平板层，以及形成在板层上的金属薄膜，并具有 定期精细结构; 并且能够通过金属薄膜取出在板层中沿层平面方向传播的光束。

公开(公告)号：US07863061B2

公开(公告)日：2011-01-04

申请号：US12509635

申请日：2009-07-27

Applicant: Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

Inventor： Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

IPC: H01L21/00

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/18347 ,  H01S2301/166 ,  H01S2301/176

Abstract: Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

公开(公告)号：US20100329745A1

公开(公告)日：2010-12-30

申请号：US12881399

申请日：2010-09-14

Applicant: Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

Inventor： Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

IPC: G03G15/04

CPC classification number: H01S5/423 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/209 ,  H01S5/34326 ,  H01S2301/166

Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

公开(公告)号：US20100303117A1

公开(公告)日：2010-12-02

申请号：US12853393

申请日：2010-08-10

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/18

CPC classification number: H01S5/105 ,  B82Y20/00 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/34326

Abstract: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength λ perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.

Abstract translation: 本发明提供了具有新颖结构的表面发射激光器，其消除了在基板侧的光子晶体层的界面处提供低折射率介质的必要性。 折射率周期性变化的多层反射镜（1300），有源层（1200）和折射率周期性结构层（1020）在与基板（1500）垂直的方向上层叠。 折射率周期结构层被构造成将具有垂直入射在折射率周期结构上的波长λ的光分离成至少透射光和衍射光。 多层反射镜被构造为具有相对于相对于透射光的反射率高的衍射光的反射率。 在包括折射率周期结构层和多层反射镜的波导内实现谐振模式。

公开(公告)号：US07796665B2

公开(公告)日：2010-09-14

申请号：US11916230

申请日：2007-04-05

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00

CPC classification number: H01S5/105 ,  B82Y20/00 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/34326

Abstract: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength λ perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.

Abstract translation: 本发明提供了具有新颖结构的表面发射激光器，其消除了在基板侧的光子晶体层的界面处提供低折射率介质的必要性。 折射率周期性变化的多层反射镜（1300），有源层（1200）和折射率周期性结构层（1020）在与衬底（1500）垂直的方向上层叠。 折射率周期结构层被构造成将具有垂直入射在折射率周期结构上的波长λ的光分离成至少透射光和衍射光。 多层反射镜被构造为具有相对于相对于透射光的反射率高的衍射光的反射率。 在包括折射率周期结构层和多层反射镜的波导内实现谐振模式。

公开(公告)号：US07697586B2

公开(公告)日：2010-04-13

申请号：US12166225

申请日：2008-07-01

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00 ,  H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/0655 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/2086 ,  H01S5/34326

Abstract: Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer.

Abstract translation: 提供了能够降低在单横模中上反射镜的反射率的效果的高输出表面发射激光器。 表面发射激光器包括层叠在基板上的多个半导体层，其包括下半导体多层反射镜，有源层和上半导体多层反射镜，其中下半导体多层反射镜或上半导体多层反射镜包括第一半导体层 具有由平行于基板的方向配置的高折射率部分和低折射率部分构成的二维光子晶体结构，其中层压在第一半导体层上的第二半导体层包括到达低折射率部分的微孔 微孔在与基板平行的方向上的横截面小于形成在第一半导体层中的低折射率部分的横截面。