公开(公告)号：US10978490B2

公开(公告)日：2021-04-13

申请号：US16535698

申请日：2019-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/45 ,  G09G3/20 ,  H01L29/66

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US10566459B2

公开(公告)日：2020-02-18

申请号：US15795736

申请日：2017-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51

Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

公开(公告)号：US10418491B2

公开(公告)日：2019-09-17

申请号：US15846518

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L21/20 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/12 ,  H01L21/263 ,  H01L29/66 ,  H01L29/24 ,  H01L29/417

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US10403763B2

公开(公告)日：2019-09-03

申请号：US15891583

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US20180315957A1

公开(公告)日：2018-11-01

申请号：US16031035

申请日：2018-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L51/52 ,  H01L51/50 ,  G09G3/3291 ,  H01L27/32

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US10079306B2

公开(公告)日：2018-09-18

申请号：US15368984

申请日：2016-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC: H01L29/00 ,  H01L27/00 ,  H01L29/786 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/51 ,  G02F1/167 ,  G02F1/136 ,  H01L27/32 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/34 ,  G09G3/36

CPC classification number: H01L29/78606 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/13606 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US10062570B2

公开(公告)日：2018-08-28

申请号：US14480760

申请日：2014-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US09985118B2

公开(公告)日：2018-05-29

申请号：US15193827

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US09941310B2

公开(公告)日：2018-04-10

申请号：US15285661

申请日：2016-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

公开(公告)号：US09893200B2

公开(公告)日：2018-02-13

申请号：US14972964

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).