公开(公告)号：US09911864B2

公开(公告)日：2018-03-06

申请号：US15634167

申请日：2017-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka Ishihara ,  Masashi Oota ,  Masashi Tsubuku ,  Masami Jintyou ,  Yukinori Shima ,  Junichi Koezuka ,  Yasuharu Hosaka ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/45 ,  H01L29/04 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US09876099B2

公开(公告)日：2018-01-23

申请号：US15493215

申请日：2017-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami Jintyou ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Suzunosuke Hiraishi

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/441 ,  H01L21/4757 ,  H01L21/385

CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

公开(公告)号：US09859444B2

公开(公告)日：2018-01-02

申请号：US15490433

申请日：2017-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Masami Jintyou

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: A self-aligned transistor including an oxide semiconductor film, which has excellent and stable electrical characteristics, is provided. A semiconductor device is provided with a transistor that includes an oxide semiconductor film, a gate electrode overlapping with part of the oxide semiconductor film, and a gate insulating film between the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a first region and second regions between which the first region is positioned. The second regions include an impurity element. A side of the gate insulating film has a depressed region. Part of the gate electrode overlaps with parts of the second regions in the oxide semiconductor film.

公开(公告)号：US09768315B2

公开(公告)日：2017-09-19

申请号：US14681383

申请日：2015-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device using a transistor including an oxide semiconductor. A semiconductor device includes a transistor which includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, and a drain electrode electrically connected to the oxide semiconductor film. A second insulating film is provided over the transistor, and a protective film is provided over the second insulating film. The second insulating film includes oxygen. The protective film includes at least one of metal elements used for the oxide semiconductor film.

公开(公告)号：US09640669B2

公开(公告)日：2017-05-02

申请号：US14640379

申请日：2015-03-06

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Masataka Nakada

IPC: H01L21/469 ,  H01L29/786 ,  H01L21/34 ,  H01L21/36 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

公开(公告)号：US09536904B2

公开(公告)日：2017-01-03

申请号：US14982042

申请日：2015-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Shunpei Yamazaki

IPC: H01L27/15 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

Abstract translation: 提供能够抑制像素之间的亮度变化的发光装置。 发光装置包括像素和第一和第二电路。 第一电路具有产生包括从像素提取的电流值的信号的功能。 第二电路具有通过该信号校正图像信号的功能。 像素至少包括发光元件和第一和第二晶体管。 第一晶体管具有通过图像信号控制向发光元件的电流的供给的功能。 第二晶体管具有控制从像素提取电流的功能。 第一和第二晶体管中的每一个的半导体膜包括与栅极重叠的第一半导体区域，与源极或漏极接触的第二半导体区域以及第一和第二半导体区域之间的第三半导体区域。

公开(公告)号：US09412876B2

公开(公告)日：2016-08-09

申请号：US14608224

申请日：2015-01-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/04 ,  H01L29/76 ,  H01L29/15 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US09337218B2

公开(公告)日：2016-05-10

申请号：US14038899

申请日：2013-09-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yamato Aihara ,  Masami Jintyou ,  Rai Sato ,  Toru Arakawa

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/13 ,  H01L27/12 ,  G02F1/137

CPC classification number: H01L27/1262 ,  G02F1/133553 ,  G02F1/13725

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

公开(公告)号：US09177969B2

公开(公告)日：2015-11-03

申请号：US14656285

申请日：2015-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US20150214376A1

公开(公告)日：2015-07-30

申请号：US14550091

申请日：2014-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Takashi Hamochi ,  Satoshi Higano ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53233 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.

Abstract translation: 提供一种新颖的半导体器件，其包括晶体管和含有Cu的金属膜用于布线，信号线等。 半导体器件包括第一布线，第二布线，第一晶体管和第二晶体管。 第一布线电连接到第一晶体管的源极或漏极，并且第二布线电连接到第二晶体管的栅极。 第一布线和第二布线均包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。 第一布线中的Cu-X合金膜与第二布线中的Cu-X合金膜连接。