中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

74 records (took 0.028 seconds)

    DISPLAY DEVICE
    51.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20130092934A1

    公开(公告)日：2013-04-18

    申请号：US13706589

    申请日：2012-12-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

    Abstract: The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

    Abstract translation: 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

    LIQUID CRYSTAL DISPLAY DEVICE
    52.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权

    公开(公告)号：US20240393651A1

    公开(公告)日：2024-11-28

    申请号：US18791701

    申请日：2024-08-01

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hajime KIMURA ,  Hideki UOCHI

    IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362

    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    55.
    发明公开
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230326503A1

    公开(公告)日：2023-10-12

    申请号：US18025009

    申请日：2021-09-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hideki UOCHI ,  Atsushi MIYAGUCHI ,  Tatsunori INOUE

    IPC: G11C7/22 ,  G11C11/22 ,  H10B53/30

    CPC classification number: G11C7/22 ,  G11C11/2275 ,  G11C11/2273 ,  G11C11/2293 ,  H10B53/30 ,  G11C11/221

    Abstract: A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

    IMAGE CORRECTION METHOD AND IMAGE CORRECTION SYSTEM
    58.
    发明申请
    IMAGE CORRECTION METHOD AND IMAGE CORRECTION SYSTEM 有权

    公开(公告)号：US20230066071A1

    公开(公告)日：2023-03-02

    申请号：US17894261

    申请日：2022-08-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yusuke KOUMURA ,  Yuki OKAMOTO ,  Toshiki MIZUGUCHI ,  Tatsuya ONUKI ,  Hideki UOCHI

    IPC: G09G3/20 ,  G09G3/3233

    Abstract: A novel image correction system is provided. The image correction system includes an imaging device, a first arithmetic device, a display portion including a plurality of pixels, and a second arithmetic device. The imaging device obtains imaging data by capturing a first-gray-level image displayed on the display portion. The first arithmetic device calculates the luminous intensity of each of the pixels and a correction standard by using the imaging data. The first arithmetic device calculates correction data for each of the pixels by using the luminous intensity and the correction standard. The second arithmetic device corrects a video signal by using the correction data. The display portion displays an image using the corrected video signal. The first arithmetic device calculates correction data for pixels that emit red light, pixels that emit green light, and pixels that emit blue light and modifies the correction data by using color temperature data.

    MEMORY DEVICE
    59.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20220262858A1

    公开(公告)日：2022-08-18

    申请号：US17629804

    申请日：2020-07-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Takanori MATSUZAKI ,  Tatsuya ONUKI ,  Yuki OKAMOTO ,  Hideki UOCHI ,  Satoru OKAMOTO ,  Hiromichi GODO ,  Kazuki TSUDA ,  Hitoshi KUNITAKE

    IPC: H01L27/24

    Abstract: A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. A first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween are provided in the first conductor. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

    DISPLAY DEVICE
    60.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20220231056A1

    公开(公告)日：2022-07-21

    申请号：US17717277

    申请日：2022-04-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/66

    Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Patent Agency Ranking