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51.发明授权公开(公告)号：US09681070B2
公开(公告)日：2017-06-13
申请号：US14845738
申请日：2015-09-04
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
CPC classification number: H04N5/35563 , H01L27/14607 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H04N5/23229 , H04N5/3575 , H04N5/363 , H04N5/365 , H04N5/37213 , H04N5/3742 , H04N5/3765 , H04N5/378
Abstract: A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
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公开(公告)号：US09674472B2
公开(公告)日：2017-06-06
申请号：US14765203
申请日：2014-02-03
Applicant: SONY CORPORATION
Inventor： Keiji Mabuchi
CPC classification number: H04N5/37455 , H04N5/341 , H04N5/376 , H04N5/3765 , H04N5/378
Abstract: A solid-state imaging device comprises a plurality of pixel blocks arranged in a matrix, each of the pixel blocks including a plurality of pixels that generate a charge in response to input light; a control unit including a vertical scanning unit and a horizontal scanning unit; and a plurality of analog-to-digital converters, each of the analog-to-digital converters disposed corresponding to pixel blocks. The control unit is configured to sequentially scan the pixels at a timing so that adjacent pixels which are located on a boundary of adjacent pixel blocks are scanned simultaneously.
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公开(公告)号：US09659994B2
公开(公告)日：2017-05-23
申请号：US15148127
申请日：2016-05-06
Applicant: Sony Corporation
Inventor： Tsutomu Imoto , Keiji Mabuchi
IPC: H01L31/113 , H01L27/148 , H01L27/146
CPC classification number: H01L27/14887 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14654 , H01L27/14656 , H01L27/14689 , H01L27/14812
Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.
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公开(公告)号：US09621833B2
公开(公告)日：2017-04-11
申请号：US14767055
申请日：2014-02-13
Applicant: SONY CORPORATION
Inventor： Keiji Mabuchi
CPC classification number: H04N5/37455 , H04N5/3742 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N5/63
Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.
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公开(公告)号：US09584740B2
公开(公告)日：2017-02-28
申请号：US14590693
申请日：2015-01-06
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Koichi Shiono
CPC classification number: H04N5/343 , H01L27/14605 , H01L27/14621 , H01L27/14643 , H01L27/14812 , H04N5/3456 , H04N5/3458 , H04N5/347 , H04N5/374 , H04N5/3765 , H04N5/378 , H04N9/045 , H04N9/04511 , H04N2209/045
Abstract: There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.
Abstract translation: 使用其中两行和两列成为一个单元的XY地址类型的固态图像拾取元件（例如，MOS型图像传感器），以及具有单元重复的颜色编码的滤色器（重复 布置两个垂直线（两个水平线），并且当指定了稀疏读出模式时，系统的时钟频率被改变为1/9，并且基于改变的时钟频率，每三个像素选择一个像素 在行方向和列方向上，以连续地读出像素信号。
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Patent Agency Ranking
公开(公告)号：US09559242B2
公开(公告)日：2017-01-31
申请号：US14052323
申请日：2013-10-11
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H01L31/18 , H01L27/146
CPC classification number: H01L27/1464 , H01L27/14603 , H01L27/14636 , H01L27/14643 , H01L31/18 , H01L2224/48091 , H01L2224/48464 , H01L2224/73257 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a back-illuminated type solid-state imaging device by (a) providing a substrate having, on a front surface side thereof, a semiconductor film on a semiconductor substrate with an insulation film therebetween; (b) forming in the semiconductor substrate a charge accumulation portion of a photoelectric conversion element that constitutes a pixel; (c) forming in the semiconductor film at least some transistors that constitute the pixel; and (d) forming on a rear surface side of the semiconductor substrate a rear surface electrode to which a voltage can be applied.
Abstract translation: 一种背照式固体摄像装置的制造方法，其特征在于，具备：（a）在半导体基板的表面侧设置绝缘膜的半导体膜的基板， （b）在半导体衬底中形成构成像素的光电转换元件的电荷累积部分; （c）在所述半导体膜中形成构成所述像素的至少一些晶体管; 以及（d）在半导体衬底的背表面侧上形成能够施加电压的背面电极。
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公开(公告)号：US09508770B2
公开(公告)日：2016-11-29
申请号：US14414710
申请日：2013-07-08
Applicant: Sony Corporation
Inventor： Takeshi Yanagita , Keiji Mabuchi
IPC: H01L31/062 , H01L27/146
CPC classification number: H01L27/1469 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14689
Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.
Abstract translation: 本文描述了固态成像装置和制造固态成像装置的方法。 作为示例，固态成像装置包括形成在传感器基板上的第一布线层和形成在电路基板上的第二布线层。 传感器基板耦合到电路基板，第一布线层和第二布线层位于传感器基板和电路基板之间。 第一电极形成在第一布线层的表面上，第二电极形成在第二布线层的表面上。 第一电极与第二电极电接触。
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公开(公告)号：US09462201B2
公开(公告)日：2016-10-04
申请号：US14738147
申请日：2015-06-12
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H04N5/357 , H01L27/146 , H04N5/378 , H04N5/374
CPC classification number: H04N5/365 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H04N5/3575 , H04N5/374 , H04N5/37455 , H04N5/37457 , H04N5/378
Abstract: A solid-state imaging device includes a pixel unit in which a plurality of pixels converting physical quantities into electric signals are arranged in a two-dimensional shape, a vertical signal line for reading signals from the pixels, and column circuits arranged corresponding to columns of the pixel unit and collecting the signals from the vertical signal line at the inside of the pixel unit.
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公开(公告)号：US09455296B2
公开(公告)日：2016-09-27
申请号：US14453298
申请日：2014-08-06
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H01L27/146 , H04N5/335 , H04N5/369 , H04N5/3745 , H01L31/0352
CPC classification number: H01L27/14605 , H01L27/14601 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14689 , H01L31/035272 , H04N5/335 , H04N5/357 , H04N5/3575 , H04N5/3696 , H04N5/37455 , H04N5/37457 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
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公开(公告)号：US09281337B2
公开(公告)日：2016-03-08
申请号：US14257644
申请日：2014-04-21
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H01L27/14 , H01L27/146 , H04N5/335 , H04N5/369 , H04N5/3745 , H01L31/0352
CPC classification number: H01L27/14605 , H01L27/14601 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14689 , H01L31/035272 , H04N5/335 , H04N5/357 , H04N5/3575 , H04N5/3696 , H04N5/37455 , H04N5/37457 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
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