公开(公告)号：US11917885B2

公开(公告)日：2024-02-27

申请号：US17316712

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jong Bae ,  Deukseok Chung ,  Tae Gon Kim ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: H10K59/38 ,  H10K50/87 ,  H10K50/856 ,  H10K50/858 ,  H10K59/12 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K59/38 ,  H10K50/856 ,  H10K50/858 ,  H10K50/87 ,  H10K59/12 ,  H10K71/00 ,  H10K2102/331

Abstract: An electronic device includes a first substrate, a plurality of light emitting elements each having a horizontal length and a vertical length which are less than or equal to about 10 micrometers (μm), each of the plurality of light emitting elements being disposed on the first substrate, a quantum dot color filter layer disposed on the plurality of light emitting elements, and a first overcoat layer between a plurality of light emitting elements and the quantum dot color filter layer. The quantum dot color filter layer includes a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively.

公开(公告)号：US11760930B2

公开(公告)日：2023-09-19

申请号：US17583305

申请日：2022-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Tae Gon Kim ,  Jooyeon Ahn ,  Ji-Yeong Kim ,  Nayoun Won ,  Shin Ae Jun

IPC: C09K11/88 ,  C09K11/02 ,  G02F1/13357 ,  C09K11/08 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  C09K11/0883 ,  G02F1/133617 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

公开(公告)号：US11746290B2

公开(公告)日：2023-09-05

申请号：US15830134

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/61 ,  C09K11/72 ,  C09K11/70 ,  C09K11/56 ,  C09K11/62 ,  C09K11/88 ,  H01L33/50 ,  H01L29/06 ,  H01L29/22 ,  C09K11/02 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/72 ,  C09K11/722 ,  C09K11/88 ,  H01L29/0665 ,  H01L29/22 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/825 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US11621403B2

公开(公告)日：2023-04-04

申请号：US17080069

申请日：2020-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nayoun Won ,  Mi Hye Lim ,  Tae Gon Kim ,  Taekhoon Kim ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/02 ,  C09K11/70 ,  C09K11/56

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

公开(公告)号：US11139346B2

公开(公告)日：2021-10-05

申请号：US16424729

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Sung Hun Lee ,  Shin Ae Jun ,  Deukseok Chung

IPC: H01L51/52 ,  H01L27/32 ,  G02B3/00 ,  G02B5/20

Abstract: A display device includes an organic emission layer in which a first pixel area, a second pixel area and a third pixel area are defined, a color filter layer disposed on the organic emission layer and including first to third color filters overlapping the first to third pixel areas, respectively, where the first to third color filters emit first light to third light, respectively, a first optical filter layer disposed on the color filter layer and which transmits at least one of the first light and the second light and reflects or absorbs the third light, and a light-focusing layer disposed between the color filter layer and the organic emission layer and including first to third light-focusing parts overlapping the first to third pixel areas, respectively, where at least one of the first to third color filters includes quantum dots.

公开(公告)号：US11034884B2

公开(公告)日：2021-06-15

申请号：US15787214

申请日：2017-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Tae Gon Kim ,  Ha Il Kwon ,  Shin Ae Jun

IPC: H01L33/50 ,  C09K11/02 ,  G03F7/00 ,  C08K3/00 ,  C09D5/22 ,  C09K11/88 ,  G02B5/20 ,  G02F1/1335 ,  G03F7/004 ,  G03F7/031 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L31/054 ,  B82Y20/00 ,  B82Y40/00 ,  H01L31/055

Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

公开(公告)号：US10950427B2

公开(公告)日：2021-03-16

申请号：US16441574

申请日：2019-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Tae Gon Kim ,  Nuri Oh ,  Tianshuo Zhao ,  Cherie Kagan ,  Eun Joo Jang ,  Christopher Murray

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/12 ,  H01L29/66 ,  H01L29/775

Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

公开(公告)号：US10808169B2

公开(公告)日：2020-10-20

申请号：US15644984

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Eun Joo Jang ,  Sang Eui Lee ,  Shin Ae Jun ,  Oul Cho ,  Tae Gon Kim ,  Tae Hyung Kim

IPC: C09K11/02 ,  G02F1/1335 ,  C09K11/59 ,  C01B17/20 ,  C08L33/04 ,  G02F1/361 ,  B24B1/00

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

公开(公告)号：US10676666B2

公开(公告)日：2020-06-09

申请号：US15675251

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il Kwon ,  Tae Gon Kim ,  Jooyeon Ahn ,  Nayoun Won ,  Shin Ae Jun ,  Eun Joo Jang

IPC: C09K11/08 ,  C09K11/02 ,  H01L33/50 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34

Abstract: A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.

公开(公告)号：US20180094190A1

公开(公告)日：2018-04-05

申请号：US15830134

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/72 ,  C09K11/722 ,  C09K11/88 ,  H01L29/0665 ,  H01L29/22 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/825 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide