公开(公告)号：US5279985A

公开(公告)日：1994-01-18

申请号：US945260

申请日：1992-09-15

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01B3/12 ,  H01L21/02 ,  H01L21/28 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/43 ,  H01L21/70

CPC分类号： H01L28/40 ,  Y10S148/014 ,  Y10S148/163

摘要： The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法，所述半导体器件包括电容结构，该电容结构包括由硅材料构成的下层电极，由氧化钽膜构成的电容绝缘膜和上层 电极，所述上层电极至少包括用于覆盖所述电容绝缘膜的氮化钛膜。 所述制造方法包括以下步骤：形成下层电极; 形成用于覆盖所述下层电极的电容绝缘膜; 以及形成用于覆盖所述电容绝缘膜的氮化钛膜。

公开(公告)号：US5202280A

公开(公告)日：1993-04-13

申请号：US894938

申请日：1992-06-08

申请人： Satoshi Kamiyama ,  Yuchiro Numasawa

发明人： Satoshi Kamiyama ,  Yuchiro Numasawa

IPC分类号： C23C14/48 ,  H01L21/02 ,  H01L21/265 ,  H01L21/334 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L28/40 ,  H01L29/66181

摘要： In a method for fabricating a semiconductor device according to the invention, a tantalum oxide layer is formed on a semiconductor substrate, titanium ions are injected into the tantalum oxide layer, and the tantalum oxide layer is heated to be fined.

摘要翻译： 在根据本发明的半导体器件的制造方法中，在半导体衬底上形成氧化钽层，将钛离子注入到钽氧化物层中，并且氧化钽层被加热以被罚款。

公开(公告)号：US09099597B2

公开(公告)日：2015-08-04

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/12 ,  H01L33/34

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100. Visible light is created from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from the nitride semiconductor layer.

摘要翻译： 提供一种发光二极管，其可以获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发射。由多孔状态的单晶6H型SiC组成的多孔层124形成在 发光二极管元件100的SiC衬底102.当从氮化物半导体层发射的紫外线激发多孔层124时，可见光由蓝色到绿色产生。

公开(公告)号：US08491476B2

公开(公告)日：2013-07-23

申请号：US12557899

申请日：2009-09-11

申请人： Nobuyuki Iwama ,  Isao Uchiumi ,  Masaaki Ishitsuka ,  Satoshi Kamiyama ,  Toru Hirano ,  Takeshi Fukasawa

发明人： Nobuyuki Iwama ,  Isao Uchiumi ,  Masaaki Ishitsuka ,  Satoshi Kamiyama ,  Toru Hirano ,  Takeshi Fukasawa

IPC分类号： A61B5/00 ,  A61B8/00

CPC分类号： A61B8/00 ,  A61B8/4483 ,  A61B8/481 ,  A61B8/488 ,  G01S7/5202 ,  G01S7/523

摘要： A bias gate part supplies a bias current to a transmission pulse generator. The transmission pulse generator receives the supply of the bias current, amplifies an input voltage, and supplies an output voltage obtained by the amplification to array transducer elements. In accordance with the timing of transmitting ultrasound waves from the array transducer elements and the level of the output voltage supplied to the array transducer elements, the bias gate part supplies the bias current to the transmission pulse generator while changing the timing of supplying the bias current.

摘要翻译： 偏置栅极部分向发射脉冲发生器提供偏置电流。 传输脉冲发生器接收偏置电流的供应，放大输入电压，并将通过放大获得的输出电压提供给阵列换能器元件。 根据从阵列换能器元件发送超声波的时间和提供给阵列换能器元件的输出电压的电平，偏置栅极部分将偏置电流提供给发送脉冲发生器，同时改变提供偏置电流的时序 。

公开(公告)号：US20120037923A1

公开(公告)日：2012-02-16

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/02

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.

摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光 被从氮化物半导体层发射的紫外线激发。

公开(公告)号：US07985964B2

公开(公告)日：2011-07-26

申请号：US12313123

申请日：2008-11-17

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/40

摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

摘要翻译： 本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

公开(公告)号：US20110048553A1

公开(公告)日：2011-03-03

申请号：US11996955

申请日：2006-07-25

申请人： Yasuaki Nakamura ,  Hideto Usui ,  Satoshi Kamiyama ,  Mitsuo Hirotomi

发明人： Yasuaki Nakamura ,  Hideto Usui ,  Satoshi Kamiyama ,  Mitsuo Hirotomi

IPC分类号： F16K7/00

CPC分类号： G05D16/0661 ,  Y10T137/7904

摘要： A pressure regulator includes a housing having an inlet port through which pressurized fluid at a primary pressure is supplied, and a discharge port through which pressurized fluid at a secondary pressure lower than the primary pressure is discharged, and at the same time having a flow passage formed therein to extend from the inlet port to the discharge port, and a pressure control mechanism which is disposed on the flow passage to reduce the primary pressure to the secondary pressure. The pressure control mechanism includes a movable body including a diaphragm which is displaced in response to change in the pressure of the fluid and the movable body is provided with an abutment portion which is brought into abutment against a part of the housing to prevent the movable body from being excessively displaced when the primary pressure becomes excessively high.

摘要翻译： 压力调节器包括壳体，该壳体具有供给初级压力的加压流体的入口端口以及排出低于初级压力的次级压力的加压流体的排出口，同时具有流路 形成在其中以从入口端口延伸到排放口;以及压力控制机构，其布置在流动通道上以将初级压力降低到次级压力。 压力控制机构包括：移动体，其包括响应于流体的压力变化而移位的隔膜，并且可移动体设置有邻接部分，抵靠部分抵靠壳体的一部分以防止移动体 当初级压力变得过高时，不会发生过度位移。

公开(公告)号：US20090166674A1

公开(公告)日：2009-07-02

申请号：US12227529

申请日：2006-05-24

申请人： Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L31/0352

CPC分类号： H01L29/2003 ,  H01L31/1126

摘要： In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band 61 by means of a depleted layer generated by irradiating a light having energy larger than band gap energy of an undoped layer 44, and electron-hole pairs are generated. A band structure is varied by the generated electron-hole pairs, and thus a portion having an energy lower than that of a quasi-Fermi level 62 of an electron at a boundary between an undoped layer 43 and the undoped layer 44, so that a two-dimensional electron gas 63 is formed. Since the two-dimensional electron gas 63 mentioned above serves as a channel, a large current is flowed by applying a voltage between drain electrode 46-source electrode 7.

摘要翻译： 在使用III族氮化物半导体的紫外光接收元件中，提供了具有增强的光接收灵敏度的紫外光接收元件。 通过照射具有大于未掺杂层44的带隙能量的能量的光而产生的耗尽层，从价带向导带61激发电子，并产生电子 - 空穴对。 通过产生的电子 - 空穴对，并且因此，在未掺杂层43和未掺杂层44之间的边界处，具有能量低于电子的准费米能级62的能量的部分的带结构变化，使得 形成二维电子气63。 由于上述二维电子束63用作沟道，所以通过在漏电极46源电极7之间施加电压而流过大电流。

公开(公告)号：US20090065763A1

公开(公告)日：2009-03-12

申请号：US12313123

申请日：2008-11-17

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/40

摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

摘要翻译： 本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

公开(公告)号：US20080123713A1

公开(公告)日：2008-05-29

申请号：US11897895

申请日：2007-08-31

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S3/08 ,  H01L21/02

CPC分类号： G03F7/70408 ,  G03F7/70025 ,  H01L33/22 ,  H01S3/082 ,  H01S3/109 ,  H01S3/2207

摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

摘要翻译： 本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。