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    Light emitting device
    51.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US09024343B2

    公开(公告)日：2015-05-05

    申请号：US13242641

    申请日：2011-09-23

    申请人： Motokazu Yamada ,  Mototaka Inobe

    发明人： Motokazu Yamada ,  Mototaka Inobe

    IPC分类号： H01L33/08 ,  H01L33/60 ,  H01L25/075 ,  H01L25/16 ,  H01L33/62

    CPC分类号： H01L33/46 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/486 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/48465 ,  H01L2224/4945 ,  H01L2924/01322 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

    摘要： A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional electrically conductive wire, and a sealing member. The substrate is provided with a conductor wiring. The light emitting element is mounted on the substrate. The electrically conductive wire electrically connects the conductor wiring and the light emitting element with at least a part of the electrically conductive wire being embedded in the light reflecting resin member. The additional electrically conductive wire electrically connects the light emitting element and the additional light emitting element, with the additional electrically conductive wire not being in contact with the light reflecting resin member. The sealing member is disposed in a region surrounded by the light reflecting resin member to cover the light emitting element.

    摘要翻译： 发光器件包括衬底，发光元件，附加发光元件，光反射树脂构件，导电线，附加导电线和密封构件。 基板设有导线。 发光元件安装在基板上。 所述导电线将所述导体布线和所述发光元件电连接，所述导电线的至少一部分嵌入在所述光反射树脂构件中。 附加的导电线将发光元件和附加的发光元件电连接，附加的导电线不与光反射树脂构件接触。 密封构件设置在由光反射树脂构件包围的区域中以覆盖发光元件。

    Semiconductor device
    59.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06977395B2

    公开(公告)日：2005-12-20

    申请号：US10433327

    申请日：2002-07-12

    申请人： Motokazu Yamada ,  Shinya Sonobe ,  Masahiko Sano

    发明人： Motokazu Yamada ,  Shinya Sonobe ,  Masahiko Sano

    IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387

    摘要： A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.

    摘要翻译： 半导体器件至少具有n导电型的GaN系半导体和在衬底上层叠有p导电型的GaN系半导体。 电极形成在具有n导电型的GaN系半导体层和具有p导电型的GaN系半导体层的两个表面上。 在具有p导电型的GaN系半导体层的表面上形成有至少包含银和除银以外的第二电极的第一电极，第二电极围绕第一电极的周边。 此外，第一电极具有开口，在该开口处具有p导电型的GaN系半导体层暴露在第一电极的轮廓内部。 根据这样的结构，能够实现使用时的发光效率高，可靠性高的装置。