公开(公告)号：US08148744B2

公开(公告)日：2012-04-03

申请号：US12827665

申请日：2010-06-30

申请人： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

发明人： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC分类号： H01L33/42

CPC分类号： H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

摘要： A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

公开(公告)号：USD636356S1

公开(公告)日：2011-04-19

申请号：US29377891

申请日：2010-10-27

申请人： Motokazu Yamada

设计人： Motokazu Yamada

公开(公告)号：USD628169S1

公开(公告)日：2010-11-30

申请号：US29366756

申请日：2010-07-29

申请人： Motokazu Yamada

设计人： Motokazu Yamada

公开(公告)号：US20100264445A1

公开(公告)日：2010-10-21

申请号：US12827486

申请日：2010-06-30

申请人： Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

发明人： Isamu NIKI ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC分类号： H01L33/02 ,  B32B5/00

CPC分类号： H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

摘要： A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

摘要翻译： 提供了包括基板，电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

公开(公告)号：US20090309485A1

公开(公告)日：2009-12-17

申请号：US12453535

申请日：2009-05-14

申请人： Hiroto Tamaki ,  Masatoshi Kameshima ,  Suguru Takashima ,  Motokazu Yamada ,  Takahiro Naitou ,  Kazuhiko Sakai ,  Yoshinori Murazaki

发明人： Hiroto Tamaki ,  Masatoshi Kameshima ,  Suguru Takashima ,  Motokazu Yamada ,  Takahiro Naitou ,  Kazuhiko Sakai ,  Yoshinori Murazaki

IPC分类号： C09K11/59 ,  H01J1/63

CPC分类号： H01L33/502 ,  C01B21/0602 ,  C01B21/0821 ,  C01P2002/52 ,  C01P2002/84 ,  C01P2004/03 ,  C01P2004/61 ,  C04B35/44 ,  C04B35/584 ,  C04B35/597 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/764 ,  C09K11/0883 ,  C09K11/77 ,  C09K11/7702 ,  C09K11/7703 ,  C09K11/7728 ,  C09K11/773 ,  C09K11/7731 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01037 ,  H01L2924/01055 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/00012

摘要： To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y−(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

公开(公告)号：US06998690B2

公开(公告)日：2006-02-14

申请号：US10609410

申请日：2003-07-01

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L27/14

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

摘要翻译： 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US06977395B2

公开(公告)日：2005-12-20

申请号：US10433327

申请日：2002-07-12

申请人： Motokazu Yamada ,  Shinya Sonobe ,  Masahiko Sano

发明人： Motokazu Yamada ,  Shinya Sonobe ,  Masahiko Sano

IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387

摘要： A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.

摘要翻译： 半导体器件至少具有n导电型的GaN系半导体和在衬底上层叠有p导电型的GaN系半导体。 电极形成在具有n导电型的GaN系半导体层和具有p导电型的GaN系半导体层的两个表面上。 在具有p导电型的GaN系半导体层的表面上形成有至少包含银和除银以外的第二电极的第一电极，第二电极围绕第一电极的周边。 此外，第一电极具有开口，在该开口处具有p导电型的GaN系半导体层暴露在第一电极的轮廓内部。 根据这样的结构，能够实现使用时的发光效率高，可靠性高的装置。

公开(公告)号：US20050001227A1

公开(公告)日：2005-01-06

申请号：US10897163

申请日：2004-07-23

申请人： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

发明人： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

摘要： A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

摘要翻译： 在半导体发光器件中稳定地确保高的外部量子效率。 在基板的表面部分上形成至少一个凹部和/或突出部分，用于散射或衍射在发光区域中产生的光。 凹部和/或突出部分具有防止在半导体层中发生晶体缺陷的形状。

公开(公告)号：US06204512B1

公开(公告)日：2001-03-20

申请号：US09448479

申请日：1999-11-24

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L2972

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

摘要翻译： 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US5877558A

公开(公告)日：1999-03-02

申请号：US995167

申请日：1997-12-19

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L29/20 ,  H01L29/72 ,  H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/78

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/42 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L29/2003 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L33/38 ,  H01L33/44 ,  H01S5/0425 ,  H01S5/32341 ,  Y02E10/50

摘要： A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.