摘要:
A method of gradation correction for laser scanning exposure is effected, based on measured density values of a test print (TP) including a horizontal stripe test pattern comprised of a plurality of horizontal lines extending in the main scanning direction and a vertical stripe pattern comprised of a plurality of vertical lines extending in the sub scanning direction. The includes the steps of calculating, based on the measured density values, a rising correction amount for main scanning rising correction of adding a rising correction component to one dot after rising of a modulated laser in order to reduce density difference between the horizontal line and the vertical line and calculating, based on the measured density values, a falling correction amount for main scanning falling correction of adding a falling correction component to one dot after rising of the modulated laser in order to reduce the density difference between the horizontal line and the vertical line.
摘要:
In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.
摘要:
After receiving job data from an information processing terminal, job data wherein an output device is designated as an output destination, a server preserves therein the job data until the moment when an output processing for the job data becomes practicable on the device of the output destination, then, creates second job data representing a replication of the job data before the transfer of the job data to the output device is started, and it conducts changing process for the second job data representing a replication, when it receives an instruction for changing an output destination and output setting, after the transfer. Further, the job data are preserved in the output control server until the moment when the print processing is completed at the output destination, so that they may cope with changing operations for a period up to completion of printing.
摘要:
An image exposing apparatus forms an image on photosensitive material by the technique of exposing and forming an image through direct modulation of a semiconductor laser device. The exposing apparatus includes a beam scanning unit for scanning a beam emitted from a semiconductor laser device to photosensitive material, a laser driving unit for driving the semiconductor laser device, the laser driving unit being operable to vary its driving current to the semiconductor laser device in accordance with a received image signal, and a laser output controller operable to measure current-beam output characteristics of the semiconductor laser device over a predetermined current range and then set a correlation between the image signal for the laser driving unit and the driving current for the semiconductor laser device, based on the measurement information.
摘要:
In a semiconductor flash memory required to have high reliability, injection and extraction of electrons must be performed through an oxide film obtained by directly oxidizing a silicon substrate. Accordingly, the voltage to be used is a large voltage ranging from positive to negative one. In contrast, by storing charges in a plurality of dispersed regions, high reliability is achieved. Based on the high reliability, transfer of electrons is permitted through not only the oxide film obtained by directly thermally oxidizing a high reliability silicon substrate but also another oxide film deposited by CVD, or the like. In consequence, a device is controlled by electric potentials of the same polarity upon writing of data and upon erasing of data.
摘要:
In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.
摘要:
When the use frequencies of the commands or data pieces of the second group are not larger than those of the commands or data pieces of the first group as the result of sorting, displaying the commands or data pieces of the second group in the order of the use frequencies of the second group without changing the order of the commands or data pieces of the first group, commands or data pieces which are frequently used are displayed at the same display positions, thereby allowing easy retrieval and selection of a desired command or data piece depending on a user's memory.
摘要:
Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.
摘要:
A data processor includes an authentication function for judging access right. The data processor further includes a nonvolatile memory cell array formed on an insulator film or a chip, and a conductor layer provided between a logic circuit for the authentication and the nonvolatile memory. The nonvolatile memory can store at least part of authentication information or an authentication program.
摘要:
An electrode drive circuit performs interlaced scanning, ensuring that the phases of the sustaining pulse in odd-numbered lines and even-numbered lines among L1 to L8 between surface discharge electrodes are the reverse of each other. With this, when either odd-numbered lines or even-numbered lines are displayed, the voltages applied between the electrodes of the undisplayed lines are at 0, eliminating the necessity for partitioning walls on the surface discharge electrodes. In surface discharge electrodes, X electrodes are provided on the two sides of a Y electrode and the area between the Y electrode and the X electrode on one side is assigned a display line at an odd-numbered frame, and the area between the Y electrode and the X electrode on the other side is assigned a display line in an even-numbered frame. Alternate areas between the surface discharge electrodes are assigned as blind lines and a discharge light emission in the blind lines is blocked or incident light to the blind lines from the outside is absorbed. Address electrodes are provided for each monochromatic pixel column and selectively connected with the pads above them, performing simultaneous selection of lines.