公开(公告)号：US07316947B2

公开(公告)日：2008-01-08

申请号：US10072931

申请日：2002-02-12

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78678

摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.

摘要翻译： 目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加 在制造半导体器件的方法中的吞吐量。 通过本发明，在具有结晶结构的第一半导体膜上形成有阻挡层，第二半导体膜和含有贵重（稀有）气体元素的第三半导体膜。 进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。 然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

公开(公告)号：US07303942B2

公开(公告)日：2007-12-04

申请号：US10735767

申请日：2003-12-16

申请人： Hideaki Kuwabara ,  Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Etsuko Arakawa ,  Shunpei Yamazaki

发明人： Hideaki Kuwabara ,  Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Etsuko Arakawa ,  Shunpei Yamazaki

IPC分类号： H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/563 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L29/0657 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.

摘要翻译： 本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。 在本发明中，通过转印技术制造集成电路膜。

公开(公告)号：US20070211189A1

公开(公告)日：2007-09-13

申请号：US11797535

申请日：2007-05-04

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： G02F1/136

CPC分类号： H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

摘要翻译： 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US07268487B2

公开(公告)日：2007-09-11

申请号：US10662357

申请日：2003-09-16

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

IPC分类号： H05B33/12

CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

摘要翻译： 本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。 在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀 可以防止含氟塑料的膜中的氟。 此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在 发光装置。

公开(公告)号：US20070178687A1

公开(公告)日：2007-08-02

申请号：US11724929

申请日：2007-03-16

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Tetsuji Yamaguchi

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Tetsuji Yamaguchi

IPC分类号： H01L21/44

CPC分类号： G02F1/136227 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1285 ,  H01L27/1292

摘要： To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.

公开(公告)号：US20070158745A1

公开(公告)日：2007-07-12

申请号：US11713606

申请日：2007-03-05

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L27/12 ,  H01L27/01

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： (Object) It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.

摘要翻译： （对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层 大的表面积要完全剥离。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 （解决方案）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11 进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行清晰的分离。

公开(公告)号：US07230271B2

公开(公告)日：2007-06-12

申请号：US10636545

申请日：2003-08-08

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L29/04 ,  H01L33/00

CPC分类号： H01L51/5259 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5315

摘要： A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency and a hygroscopic property, and an inorganic insulating film 312c are repeatedly laminated over a cathode. The stress relaxation layer 312b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310, containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.

摘要翻译： 提供了具有延长寿命的有机化合物的发光元件。 根据本发明，提供一种结构，其中为了保护发光元件免受潮湿，无机绝缘膜312a，具有透明性和吸湿性的应力松弛层312b和无机绝缘膜 312c反复层压在阴极上。 具有透明性和吸湿性的应力松弛层312b使用至少一种选自包含与包含阴极和阳极的有机化合物的层310相同的材料的膜的膜， 能够通过气相沉积形成的层，以及能够通过涂布形成的层。

公开(公告)号：US07211828B2

公开(公告)日：2007-05-01

申请号：US10235839

申请日：2002-09-06

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L51/5253 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3251 ,  H01L29/78603 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/529 ,  H01L2221/6835 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

摘要翻译： 能够抑制水分，氧气，碱金属和碱土金属等杂质的扩散劣化的发光装置，具体而言，在塑料基板上形成有发光元件的柔性发光装置。 在塑料基板上，设置有两层和更多的阻挡膜，其包括由AlNxOy表示的层，其能够阻挡发光层中的水分和氧的侵入并阻止诸如碱金属和碱土金属的杂质的侵入 在TFT的有源层中，并且在两层阻挡膜之间设置含有树脂的应力松弛膜。

公开(公告)号：US07192859B2

公开(公告)日：2007-03-20

申请号：US10845422

申请日：2004-05-13

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Tetsuji Yamaguchi

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Tetsuji Yamaguchi

IPC分类号： H01L21/44

CPC分类号： G02F1/136227 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1285 ,  H01L27/1292

摘要： To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.

摘要翻译： 为了提供一种形成布线的方法，用于提供可靠性和成本性能优异的半导体器件。 此外，通过使用根据本发明的布线形成方法，提供制造半导体器件和显示器件的方法。 根据本发明，当通过液滴喷射方法将主要具有绝缘表面的基板上的布线材料等直接图案化时，布线形成在至少具有与绝缘体上的下层部分接触的开口的位置 通过滴落包含导电组合物的液滴通过液滴喷射法提供开口的膜。 通过用形成在其上的布线来加热基板，开口上的布线的表面和除了开口上的布线以外的布线的表面几乎平整，并且开口被填充。

公开(公告)号：US07189604B2

公开(公告)日：2007-03-13

申请号：US10629069

申请日：2003-07-29

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L21/00 ,  H01L21/77

CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.

摘要翻译： 本发明的目的是实现具有高TFT特性的半导体器件。 在制造有源矩阵显示装置时，通过在掺杂杂质离子时防止氧离子渗透到电极中，使电极材料的电阻率保持较低。 可以获得具有低电阻率的显示装置。