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148 条记录 (耗时 0.027 秒)

    Film formation apparatus for semiconductor process
    51.
    发明申请
    Film formation apparatus for semiconductor process 审中-公开
    用于半导体工艺的成膜装置

    公开(公告)号：US20090114156A1

    公开(公告)日：2009-05-07

    申请号：US12285512

    申请日：2008-10-07

    申请人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

    发明人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4405 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/3185

    摘要： A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.

    摘要翻译： 一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。 清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。

    POWER AMPLIFIER
    52.
    发明申请
    POWER AMPLIFIER 有权
    功率放大器

    公开(公告)号：US20090051437A1

    公开(公告)日：2009-02-26

    申请号：US11946931

    申请日：2007-11-29

    申请人： Kazuya Yamamoto ,  Miyo Miyashita

    发明人： Kazuya Yamamoto ,  Miyo Miyashita

    IPC分类号： H03G3/10

    CPC分类号： H03F1/302 ,  H03F3/19 ,  H03F2200/18 ,  H03F2200/447 ,  H03F2200/451 ,  H03G1/0035

    摘要： An emitter follower circuit applies to an input terminal of a second amplifying device a voltage according to a reference voltage applied to a reference terminals. First and second resistors are connected in series between the reference terminal and an input terminal of a first amplifying device. The collector of a first transistor is connected to the reference terminal, and a control voltage is applied to the base of the first transistor. A third resistor is connected between the emitter of the first transistor and a grounding point. A current mirror circuit draws a current proportional to a current input from the collector of the first transistor from a connection point of the first and second resistors.

    摘要翻译： 射极跟随器电路根据施加到参考端子的参考电压向第二放大器件的输入端子施加电压。 第一和第二电阻串联连接在参考端和第一放大器的输入端之间。 第一晶体管的集电极连接到参考端子，并且控制电压被施加到第一晶体管的基极。 第三电阻连接在第一晶体管的发射极和接地点之间。 电流镜电路从第一和第二电阻器的连接点吸取与来自第一晶体管的集电极的电流成比例的电流。

    Film formation apparatus and method for using the same
    54.
    发明申请
    Film formation apparatus and method for using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US20080003362A1

    公开(公告)日：2008-01-03

    申请号：US11819500

    申请日：2007-06-27

    申请人： Nobutake Nodera ,  Kazuhide Hasebe ,  Kazuya Yamamoto

    发明人： Nobutake Nodera ,  Kazuhide Hasebe ,  Kazuya Yamamoto

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： H01L21/67109 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

    摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.

    摘要翻译： 使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。 此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

    Output overvoltage protection circuit for power amplifier
    55.
    发明授权
    Output overvoltage protection circuit for power amplifier 有权
    功率放大器输出过压保护电路

    公开(公告)号：US07145397B2

    公开(公告)日：2006-12-05

    申请号：US10889059

    申请日：2004-07-13

    申请人： Kazuya Yamamoto ,  Teruyuki Shimura ,  Tomoyuki Asada ,  Satoshi Suzuki

    发明人： Kazuya Yamamoto ,  Teruyuki Shimura ,  Tomoyuki Asada ,  Satoshi Suzuki

    IPC分类号： H03F1/52

    CPC分类号： H03F1/52

    摘要： Disclosed is an output overvoltage protection circuit for a power amplifier having a plurality of stages, which comprises a monitor circuit for monitoring an output overvoltage of an output transistor in the final stage of the power amplifier and allowing a current to flow therethrough in response to the monitored output overvoltage, and a current mirror circuit for supplying a current proportional to the current from the monitor circuit in such a manner that the base bias of the first-stage transistor of the power amplifier is reduced in response to the current supplied from the current mirror circuit, to reduce the output of the final-stage output transistor.

    摘要翻译： 公开了一种用于具有多级的功率放大器的输出过电压保护电路，其包括监视电路，用于监视功率放大器的最后级中的输出晶体管的输出过电压，并且允许电流响应于 监控的输出过电压，以及电流镜电路，用于提供与来自监视器电路的电流成比例的电流，使得功率放大器的第一级晶体管的基极偏置响应于从电流提供的电流而减小 镜像电路，以减少最终级输出晶体管的输出。

    Image forming apparatus and print system
    56.
    发明申请
    Image forming apparatus and print system 有权
    图像形成装置和打印系统

    公开(公告)号：US20050141032A1

    公开(公告)日：2005-06-30

    申请号：US10996954

    申请日：2004-11-24

    申请人： Kazuya Yamamoto

    发明人： Kazuya Yamamoto

    IPC分类号： B41J5/30 ,  G06F3/12 ,  G06F15/00 ,  G06K15/00

    CPC分类号： G06K15/00 ,  G06K15/1817

    摘要： When a jam occurs, a CPU stops reading of compression data, receives again all of the read-out compression data of a page to which the reading-stopped compression data belongs, and stores it into each of corresponding storing areas in a reception buffer again. A time necessary for communication between a host and a printer at the time of jam recovery can be shortened.

    摘要翻译： 当卡纸发生时，CPU停止读取压缩数据，再次接收读取停止的压缩数据所属的页面的所有读出的压缩数据，并将其再次存储在接收缓冲器中的每个相应的存储区域中 。 可以缩短卡纸恢复时主机与打印机之间的通信所需的时间。

    Multi-band power amplifier
    57.
    发明授权
    Multi-band power amplifier 失效
    多波段功率放大器

    公开(公告)号：US06838941B2

    公开(公告)日：2005-01-04

    申请号：US10309239

    申请日：2002-12-04

    申请人： Kazuya Yamamoto ,  Satoshi Suzuki

    发明人： Kazuya Yamamoto ,  Satoshi Suzuki

    IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/73 ,  H03F1/30 ,  H03F1/52 ,  H03F3/21 ,  H03F3/213 ,  H03F3/60 ,  H03F3/72 ,  H03F3/68

    CPC分类号： H03F3/211 ,  H03F1/302 ,  H03F3/602 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/429 ,  H03F2203/7209

    摘要： A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors for a multi-band power amplifier is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.

    摘要翻译： 最后阶段的功率放大晶体管由在形成多频带功率放大器的最终输出放大晶体管的区域中以混合方式排列的单元晶体管形成。 此外，电感元件连接在最终输出级晶体管耦合到的输出信号线之间。 因此，双频带功率放大器中的最后级晶体管可以由于发热而不受电流集中而不损害带间隔离。

    Differential amplifier including bias circuit with bias resistor
    59.
    发明授权
    Differential amplifier including bias circuit with bias resistor 失效
    差分放大器包括带偏置电阻的偏置电路

    公开(公告)号：US5886578A

    公开(公告)日：1999-03-23

    申请号：US883455

    申请日：1997-06-26

    申请人： Miyo Miyashita ,  Kazuya Yamamoto

    发明人： Miyo Miyashita ,  Kazuya Yamamoto

    IPC分类号： H03K5/08 ,  H03F3/45 ,  H03K5/02 ,  H03K19/0185 ,  H03K19/0952

    CPC分类号： H03F3/45076 ,  H03K19/018564 ,  H03K5/02

    摘要： A differential amplifier receiving a first input signal and a second input signal, respectively, and amplifying voltage difference between the first and second input signals to output an output signal includes a first source follower circuit receiving an external data signal as the first input signal, and having an output node; a second source following circuit having a constant current source FET and receiving a reference voltage as the second input signal; and a bias circuit providing a signal having the same phase as the data signal from the output node of the first source follower circuit and inputting that signal to a gate terminal of the constant current source FET of the second source follower circuit. By providing an input interface circuit connected to an external signal source and producing a phase inversion signal from an input data signal in a differential amplifier or in a first stage differential amplifier connected to other amplifiers in multiple stages, the differential gain can be improved to a value approximately equal to that obtained when differential inputs are supplied.

    摘要翻译： 分别接收第一输入信号和第二输入信号的差分放大器以及放大第一和第二输入信号之间的电压差以输出输出信号包括接收作为第一输入信号的外部数据信号的第一源极跟随器电路，以及 具有输出节点; 第二源电路，具有恒流源FET并接收参考电压作为第二输入信号; 以及偏置电路，提供与来自第一源极跟随器电路的输出节点的数据信号具有相同相位的信号，并将该信号输入到第二源极跟随器电路的恒流源FET的栅极端子。 通过提供连接到外部信号源的输入接口电路，并且从差分放大器中的输入数据信号或在多级连接到其它放大器的第一级差分放大器中产生相位反转信号，可以将差分增益提高到 大约等于提供差分输入时获得的值。