公开(公告)号：US08278743B2

公开(公告)日：2012-10-02

申请号：US13023962

申请日：2011-02-09

申请人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

发明人： Tomoyuki Fukuda ,  Yoshihiro Kubota ,  Hiroshi Ohtsubo ,  Yuichi Asano

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2224/05599

摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

公开(公告)号：US20120228730A1

公开(公告)日：2012-09-13

申请号：US13476301

申请日：2012-05-21

申请人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L31/0248

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

摘要翻译： 对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。 然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。 在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。 在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。

公开(公告)号：US08236667B2

公开(公告)日：2012-08-07

申请号：US12163743

申请日：2008-06-27

申请人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

发明人： Atsuo Ito ,  Yoshihiro Kubota ,  Kiyoshi Mitani

IPC分类号： H01L21/30

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/78603

摘要： Ion injection is performed to a single crystal silicon wafer to form an ion injection layer, with the ion injection surface of the single crystal silicon wafer and/or the surface of the transparent insulation substrate are/is processed using plasma and/or ozone. The ion injection surface of the single crystal silicon wafer and the surface of the transparent insulation substrate are bonded to each other by bringing them into close contact with each other at room temperature. A silicon on insulator (SOI) wafer is obtained by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer, to form an SOI layer on the transparent insulation substrate, and thermal processing for flattening the SOI layer surface is performed to the SOI wafer, under an atmosphere of an inert gas, a hydrogen gas, and a mixture gas of them.

摘要翻译： 对单晶硅晶片进行离子注入以形成离子注入层，使用等离子体和/或臭氧处理单晶硅晶片的离子注入表面和/或透明绝缘基板的表面。 单晶硅晶片的离子注入表面和透明绝缘基板的表面通过在室温彼此紧密接触而彼此接合。 通过对单晶硅晶片进行机械剥离而对离子注入层产生冲击，在透明绝缘基板上形成SOI层，进行SOI层表面的平坦化处理，得到绝缘体上硅（SOI）晶片 在惰性气体，氢气和它们的混合气体的气氛下，向SOI晶片。

公开(公告)号：US08138064B2

公开(公告)日：2012-03-20

申请号：US12922569

申请日：2009-10-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/304

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.

摘要翻译： 公开了一种用于制造硅膜转移绝缘体晶片的方法。 该方法包括对绝缘体晶片的表面和注入氢离子形成氢离子的单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理的表面活化步骤 植皮层 键合步骤，将氢离子注入表面结合到绝缘体晶片的表面以获得接合的晶片; 加热接合晶片的第一加热步骤; 研磨和/或蚀刻步骤，研磨和/或蚀刻接合晶片的单晶硅晶片侧的表面; 第二加热步骤，加热粘合的晶片; 以及通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击来分离氢离子注入层的分离步骤。

公开(公告)号：US08129612B2

公开(公告)日：2012-03-06

申请号：US12076916

申请日：2008-03-25

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/04 ,  H01L31/028

CPC分类号： H01L31/1804 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for manufacturing a single-crystal silicon solar cell including the steps of: implanting a hydrogen ion or a rare gas ion into a single-crystal silicon substrate; forming a transparent insulator layer on a metal substrate; performing a surface activation treatment with respect to at least one of the ion implanted surface and a surface of the transparent insulator layer; bonding these surfaces; mechanically delaminating the single-crystal silicon substrate to provide a single-crystal silicon layer; forming a plurality of second conductivity type diffusion regions in the delaminated surface side of the single-crystal silicon layer so that a plurality of first conductivity type regions and the plurality of second conductivity regions are present in the delaminated surface of the single-crystal silicon layer; respectively forming a plurality of individual electrodes on the plurality of first and second conductivity type regions of the single-crystal silicon layer; forming respective collecting electrodes; and forming a transparent protective film.

摘要翻译： 公开了一种制造单晶硅太阳能电池的方法，包括以下步骤：将氢离子或稀有气体离子注入到单晶硅衬底中; 在金属基板上形成透明绝缘体层; 对所述离子注入表面和所述透明绝缘体层的表面中的至少一个进行表面活化处理; 粘合这些表面; 机械分层单晶硅衬底以提供单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电型扩散区，使得多个第一导电型区和多个第二导电区存在于单晶硅层的分层表面 ; 分别在单晶硅层的多个第一和第二导电类型区域上形成多个单独电极; 形成各个集电极; 并形成透明保护膜。

公开(公告)号：USD653321S1

公开(公告)日：2012-01-31

申请号：US29394431

申请日：2011-06-16

申请人： Hiromasa Watanabe ,  Yoshihiro Kubota ,  Shikoh Morita

设计人： Hiromasa Watanabe ,  Yoshihiro Kubota ,  Shikoh Morita

公开(公告)号：US20110290321A1

公开(公告)日：2011-12-01

申请号：US13137281

申请日：2011-08-03

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/0224 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/022466 ,  H01L31/1884 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

摘要翻译： 一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明导电粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 将透明导电粘合剂固化并熟化成透明导电膜; 对离子注入层施加冲击以机械地分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。

公开(公告)号：US07923835B2

公开(公告)日：2011-04-12

申请号：US12018263

申请日：2008-01-23

申请人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

发明人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

IPC分类号： H01L23/04 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H05K3/0052 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K3/242 ,  H05K3/28 ,  H05K3/284 ,  H05K2201/0909 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/92247

摘要： An electronic device has a substrate that has first and second peripheral portions. The first peripheral portion provides a shearing position for separation. The electronic device has a plurality of wiring layers one of which forms a functional surface wiring on the substrate, an electronic element mounted on the substrate, and an encapsulation member formed over the substrate and the electronic element. The surface wiring is selectively disposed under the encapsulation member and in an area adjacent to the second peripheral portion.

摘要翻译： 电子设备具有具有第一和第二周边部分的基板。 第一周边部分提供用于分离的剪切位置。 电子器件具有多个布线层，其中一个在基板上形成功能表面布线，安装在基板上的电子元件以及形成在基板和电子元件上的封装元件。 表面布线选择性地设置在封装构件的下方和与第二周边部分相邻的区域中。

公开(公告)号：US20110014776A1

公开(公告)日：2011-01-20

申请号：US12933113

申请日：2009-04-01

申请人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/12

摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.

摘要翻译： 一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。 制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。 该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

公开(公告)号：US20110014775A1

公开(公告)日：2011-01-20

申请号：US12922569

申请日：2009-10-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/304

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer.[MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.

摘要翻译： [问题]提供一种用于制造SOI晶片的方法，该方法可以防止由于绝缘基板和SOI层之间的热膨胀系数的差异而引起的热应变，剥离，裂纹等的发生，并且还提高了 SOI层的膜厚度。 解决问题的手段提供一种SOI晶片的制造方法，包括以下步骤：对绝缘体晶片的表面和具有单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理，所述单晶硅晶片具有 氢离子注入层; 将氢离子注入表面接合到绝缘体晶片的表面以获得接合晶片; 在第一温度下加热接合的晶片; 研磨和/或蚀刻如此加热的接合晶片的单晶硅晶片侧的表面，以使结合晶片的单晶硅晶片变薄; 加热接合的晶片，从而在第一温度较高的第二温度下进行研磨和/或蚀刻; 并且通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击，在氢离子注入层处进行脱离。