公开(公告)号：US20080174005A1

公开(公告)日：2008-07-24

申请号：US12018263

申请日：2008-01-23

申请人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

发明人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

IPC分类号： H01L23/492 ,  H01L21/60

CPC分类号： H05K3/0052 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K3/242 ,  H05K3/28 ,  H05K3/284 ,  H05K2201/0909 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/92247

摘要： An electronic device has a substrate that has first and second peripheral portions. The first peripheral portion provides a shearing position for separation. The electronic device has a plurality of wiring layers one of which forms a functional surface wiring on the substrate, an electronic element mounted on the substrate, and an encapsulation member formed over the substrate and the electronic element. The surface wiring is selectively disposed under the encapsulation member and in an area adjacent to the second peripheral portion.

摘要翻译： 电子设备具有具有第一和第二周边部分的基板。 第一周边部分提供用于分离的剪切位置。 电子器件具有多个布线层，其中一个在基板上形成功能表面布线，安装在基板上的电子元件以及形成在基板和电子元件上的封装元件。 表面布线选择性地设置在封装构件的下方和与第二周边部分相邻的区域中。

公开(公告)号：US07923835B2

公开(公告)日：2011-04-12

申请号：US12018263

申请日：2008-01-23

申请人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

发明人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

IPC分类号： H01L23/04 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H05K3/0052 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K3/242 ,  H05K3/28 ,  H05K3/284 ,  H05K2201/0909 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/92247

摘要： An electronic device has a substrate that has first and second peripheral portions. The first peripheral portion provides a shearing position for separation. The electronic device has a plurality of wiring layers one of which forms a functional surface wiring on the substrate, an electronic element mounted on the substrate, and an encapsulation member formed over the substrate and the electronic element. The surface wiring is selectively disposed under the encapsulation member and in an area adjacent to the second peripheral portion.

摘要翻译： 电子设备具有具有第一和第二周边部分的基板。 第一周边部分提供用于分离的剪切位置。 电子器件具有多个布线层，其中一个在基板上形成功能表面布线，安装在基板上的电子元件以及形成在基板和电子元件上的封装元件。 表面布线选择性地设置在封装构件的下方和与第二周边部分相邻的区域中。

公开(公告)号：US20050269701A1

公开(公告)日：2005-12-08

申请号：US10971692

申请日：2004-10-25

申请人： Kazuto Tsuji ,  Yoshihiro Kubota ,  Kenji Asada ,  Sumikazu Hosoyamada

发明人： Kazuto Tsuji ,  Yoshihiro Kubota ,  Kenji Asada ,  Sumikazu Hosoyamada

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L21/607 ,  H01L23/48 ,  H01L23/552 ,  H01L23/66 ,  H01L31/0328

CPC分类号： H01L23/66 ,  H01L23/13 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6627 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate having wiring that impedance-matched with circuits of a semiconductor element is mounted on a substrate. A plurality of first metal wires connect between first electrodes of the semiconductor element and electrodes of the substrate. A plurality of second metal wires connect between second electrodes of the semiconductor element and first electrodes of the impedance-matched substrate. A plurality of third metal wires connect between second electrodes of the impedance-matched substrate and electrodes of the substrate. The second metal wires extend parallel to each other, and the third metal wires also extend parallel to each other.

摘要翻译： 在半导体器件中，当将高度致密化的半导体元件安装在低成本基板上同时减少接合线的长度时，可以将接合线彼此平行地应用于高速信号线的电极。 具有与半导体元件的电路阻抗匹配的布线的阻抗匹配基板安装在基板上。 多个第一金属线连接在半导体元件的第一电极和基板的电极之间。 多个第二金属线连接在半导体元件的第二电极和阻抗匹配衬底的第一电极之间。 多个第三金属线连接在阻抗匹配衬底的第二电极和衬底的电极之间。 第二金属线彼此平行地延伸，并且第三金属线也彼此平行地延伸。

公开(公告)号：US07476811B2

公开(公告)日：2009-01-13

申请号：US11078326

申请日：2005-03-14

申请人： Yoshihiro Kubota ,  Kazuto Tsuji ,  Sumikazu Hosoyamada

发明人： Yoshihiro Kubota ,  Kazuto Tsuji ,  Sumikazu Hosoyamada

IPC分类号： H05K1/00

CPC分类号： H01L23/3128 ,  H01L23/13 ,  H01L23/24 ,  H01L23/36 ,  H01L23/49816 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/181 ,  H05K1/0203 ,  H05K1/182 ,  H05K3/0058 ,  H05K3/284 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device includes: a semiconductor element; a circuit substrate having a cavity at a center thereof; a heat radiating member having the semiconductor element bonded at a central portion thereof; and a sealing resin configured to seal the semiconductor element in the cavity. A configuration is provided such that a bonding resin may be disposed in a gap portion which communicates with the cavity between the circuit substrate and the heat radiating member, and by means of a bonding force of the bonding resin, the heat radiating member is permanently fixed to the circuit substrate.

摘要翻译： 半导体器件包括：半导体元件; 电路基板，其中心具有空腔; 散热构件，其半导体元件在其中心部分接合; 以及密封树脂，其被配置为将所述半导体元件密封在所述空腔中。 提供一种结构，使得接合树脂可以设置在与电路基板和散热构件之间的空腔连通的间隙部分中，并且借助于接合树脂的结合力，散热构件被永久固定 到电路基板。

公开(公告)号：US06696754B2

公开(公告)日：2004-02-24

申请号：US10214306

申请日：2002-08-08

申请人： Mitsutaka Sato ,  Tetsuya Fujisawa ,  Shigeyuki Maruyama ,  Junichi Kasai ,  Toshimi Kawahara ,  Toshio Hamano ,  Yoshihiro Kubota ,  Mitsunada Osawa ,  Yoshiyuki Yoneda ,  Kazuto Tsuji ,  Hirohisa Matsuki

发明人： Mitsutaka Sato ,  Tetsuya Fujisawa ,  Shigeyuki Maruyama ,  Junichi Kasai ,  Toshimi Kawahara ,  Toshio Hamano ,  Yoshihiro Kubota ,  Mitsunada Osawa ,  Yoshiyuki Yoneda ,  Kazuto Tsuji ,  Hirohisa Matsuki

IPC分类号： H01L2334

CPC分类号： H01L25/105 ,  H01L2224/48227 ,  H01L2225/1023 ,  H01L2924/09701 ,  H01L2924/1533 ,  H01L2924/3025 ,  H01R12/82 ,  H05K7/1431 ,  H01L2924/00

摘要： A semiconductor module includes a plurality of semiconductor devices each including a circuit substrate carrying thereon a single memory semiconductor chip and a socket for holding the semiconductor devices detachably.

摘要翻译： 半导体模块包括多个半导体器件，每个半导体器件包括承载有单个存储器半导体芯片的电路衬底和用于可拆卸地保持半导体器件的插座。

公开(公告)号：US5804468A

公开(公告)日：1998-09-08

申请号：US561421

申请日：1995-11-21

申请人： Kazuto Tsuji ,  Yoshiyuki Yoneda ,  Hideharu Sakoda ,  Michio Sono ,  Ichiro Yamaguchi ,  Toshio Hamano ,  Yoshihiro Kubota ,  Michio Hayakawa ,  Yoshihiko Ikemoto ,  Yukio Saigo ,  Naomi Miyaji

发明人： Kazuto Tsuji ,  Yoshiyuki Yoneda ,  Hideharu Sakoda ,  Michio Sono ,  Ichiro Yamaguchi ,  Toshio Hamano ,  Yoshihiro Kubota ,  Michio Hayakawa ,  Yoshihiko Ikemoto ,  Yukio Saigo ,  Naomi Miyaji

IPC分类号： H01L23/057 ,  H01L23/10 ,  H01L23/433 ,  H01L23/495 ,  H01L21/56 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L23/057 ,  H01L23/10 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/49 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011

摘要： A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

摘要翻译： 一种半导体装置的半导体器件的制造方法，其中半导体器件被封装在其中，包括基底，并且在基底的表面上形成金属膜。 半导体芯片形成在金属膜上。 形成在半导体芯片上的焊盘通过导线连接到金属膜。 在金属膜上形成密封层。 导线形成在玻璃层上。 在金属膜上形成连接层，并含有导电粒子。 连接层与用于电源系统的引线接触并将金属膜连接到引线。

公开(公告)号：US07361980B2

公开(公告)日：2008-04-22

申请号：US11137697

申请日：2005-05-26

申请人： Sumikazu Hosoyamada ,  Kazuto Tsuji ,  Yoshihiro Kubota

发明人： Sumikazu Hosoyamada ,  Kazuto Tsuji ,  Yoshihiro Kubota

IPC分类号： H01L23/02

CPC分类号： H01L23/5286 ,  H01L24/03 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a semiconductor chip in which a circuit part provided in a center of the semiconductor chip is connected with power-supply lines and power-supply electrodes to supply power from an external power source to the circuit part. A substrate is provided for carrying the semiconductor chip thereon and provided so that first terminals in a region encircling the semiconductor chip are electrically connected to the power-supply electrodes. A first opening is formed on the power-supply line in a center of the circuit part. A second opening is formed on the power-supply line at a peripheral part of the circuit part. A conductor layer is electrically connected to second terminals in the region encircling the semiconductor chip on the substrate, and provided so that the power-supply line in the first opening and the power-supply line in the second opening are connected together.

摘要翻译： 半导体器件包括半导体芯片，其中设置在半导体芯片的中心的电路部分与电源线和电源电极连接，以从外部电源向电路部分供电。 提供了用于在其上承载半导体芯片的基板，并且设置成使得包围半导体芯片的区域中的第一端子电连接到电源电极。 在电路部分的中心的电源线上形成第一开口。 在电路部分的周边部分的电源线上形成第二开口。 导体层与围绕基板上的半导体芯片的区域中的第二端子电连接，并且设置为使得第一开口中的电源线和第二开口中的电源线连接在一起。

公开(公告)号：US07042102B2

公开(公告)日：2006-05-09

申请号：US10971692

申请日：2004-10-25

申请人： Kazuto Tsuji ,  Yoshihiro Kubota ,  Kenji Asada ,  Sumikazu Hosoyamada

发明人： Kazuto Tsuji ,  Yoshihiro Kubota ,  Kenji Asada ,  Sumikazu Hosoyamada

IPC分类号： H01L23/48 ,  H01L29/40

CPC分类号： H01L23/66 ,  H01L23/13 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6627 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate having wiring that impedance-matched with circuits of a semiconductor element is mounted on a substrate. A plurality of first metal wires connect between first electrodes of the semiconductor element and electrodes of the substrate. A plurality of second metal wires connect between second electrodes of the semiconductor element and first electrodes of the impedance-matched substrate. A plurality of third metal wires connect between second electrodes of the impedance-matched substrate and electrodes of the substrate. The second metal wires extend parallel to each other, and the third metal wires also extend parallel to each other.

摘要翻译： 在半导体器件中，当将高度致密化的半导体元件安装在低成本基板上同时减少接合线的长度时，可以将接合线彼此平行地应用于高速信号线的电极。 具有与半导体元件的电路阻抗匹配的布线的阻抗匹配基板安装在基板上。 多个第一金属线连接在半导体元件的第一电极和基板的电极之间。 多个第二金属线连接在半导体元件的第二电极和阻抗匹配衬底的第一电极之间。 多个第三金属线连接在阻抗匹配衬底的第二电极和衬底的电极之间。 第二金属线彼此平行地延伸，并且第三金属线也彼此平行地延伸。

公开(公告)号：US06472744B2

公开(公告)日：2002-10-29

申请号：US09084097

申请日：1998-05-26

申请人： Mitsutaka Sato ,  Tetsuya Fujisawa ,  Shigeyuki Maruyama ,  Junichi Kasai ,  Toshimi Kawahara ,  Toshio Hamano ,  Yoshihiro Kubota ,  Mitsunada Osawa ,  Yoshiyuki Yoneda ,  Kazuto Tsuji ,  Hirohisa Matsuki

发明人： Mitsutaka Sato ,  Tetsuya Fujisawa ,  Shigeyuki Maruyama ,  Junichi Kasai ,  Toshimi Kawahara ,  Toshio Hamano ,  Yoshihiro Kubota ,  Mitsunada Osawa ,  Yoshiyuki Yoneda ,  Kazuto Tsuji ,  Hirohisa Matsuki

IPC分类号： H01L2500

CPC分类号： H01L25/105 ,  H01L2224/48227 ,  H01L2225/1023 ,  H01L2924/09701 ,  H01L2924/1533 ,  H01L2924/3025 ,  H01R12/82 ,  H05K7/1431 ,  H01L2924/00

摘要： A semiconductor module includes a plurality of semiconductor devices each including a circuit substrate carrying thereon a single memory semiconductor chip and a socket for holding the semiconductor devices detachably.

摘要翻译： 半导体模块包括多个半导体器件，每个半导体器件包括承载有单个存储器半导体芯片的电路衬底和用于可分离地保持半导体器件的插座。

公开(公告)号：US5497032A

公开(公告)日：1996-03-05

申请号：US213720

申请日：1994-03-16

申请人： Kazuto Tsuji ,  Yoshiyuki Yoneda ,  Hideharu Sakoda ,  Michio Sono ,  Ichiro Yamaguchi ,  Toshio Hamano ,  Yoshihiro Kubota ,  Michio Hayakawa ,  Yoshihiko Ikemoto ,  Yukio Saigo ,  Naomi Miyaji

发明人： Kazuto Tsuji ,  Yoshiyuki Yoneda ,  Hideharu Sakoda ,  Michio Sono ,  Ichiro Yamaguchi ,  Toshio Hamano ,  Yoshihiro Kubota ,  Michio Hayakawa ,  Yoshihiko Ikemoto ,  Yukio Saigo ,  Naomi Miyaji

IPC分类号： H01L23/057 ,  H01L23/10 ,  H01L23/433 ,  H01L23/495 ,  H01L23/02 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/057 ,  H01L23/10 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/49 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011

摘要： A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

摘要翻译： 具有密封半导体器件的封装的半导体器件包括基底，并且在基底的表面上形成金属膜。 半导体芯片形成在金属膜上。 形成在半导体芯片上的焊盘通过导线连接到金属膜。 在金属膜上形成密封层。 导线形成在玻璃层上。 在金属膜上形成连接层，并含有导电粒子。 连接层与用于电源系统的引线接触并将金属膜连接到引线。