摘要:
A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.
摘要:
A double polarized light beam spectrophotometer of a light-source modulation type. A modulated light beam emitted by a light source is conducted through specimen atom vapor generated by a graphite atomizer. Wavelength of light undergone atom absorption is selected and spatially separated into a pair of linearly polarized light beams perpendicular to each other. The pair of the linearly polarized light beams separated are alternately passed through a chopper and received by a photoelectric conversion device to be converted into electric signals which are utilized for determining atomic absorption of the specimen. The phase of modulation of light radiated from the light source is synchronized with phase of a current supplied to the graphite atomizer for heating thereof and the switching timing of the chopper.
摘要:
The present invention aims at realizing a PDP and a mercury-free fluorescent lamp feasible to maintain excellent luminescent characteristics over long periods by suppressing time-lapse changes in luminescent characteristics of a phosphor that is excited by vacuum ultraviolet light to thereby emit light. To accomplish this object, the oxide phosphor of the invention comprises individual particles, each of which has a region at and near the surface thereof modified, and the elemental composition of the surface region is in a more oxidized state than that of the internal region of the particles. Alternatively, the surface region has more halogen or chalcogen in the elemental composition. In the phosphor treatment method of the invention, the surface region of individual phosphor particles is selectively modified by (i) forming a highly reactive gas atmosphere by exciting gas which contains reactive gas, and (ii) exposing the phosphor to the gas atmosphere.
摘要:
A sample plate assembly for an electrophoresis apparatus including a tray at a sample supply portion of a capillary array, an adapter for the tray, a sample plate mounted on the adapter, a septer mounted on the sample plate and a septer holder mounted on the septer. Thereby, many number of samples can be automatically supplied to capillaries in a multi capillary array.
摘要:
According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.
摘要:
A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要:
Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.
摘要:
A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
摘要:
A standard containing the same elements as a sample is prepared. Concentrations of the elements of the standard are known previously. When signal intensities of an element of the standard solution and the sample exceed an upper limit of a pulse counter of an element analyzing apparatus, a transmitting rate of a passage, through which ionized elements of the standard and the sample pass, is controlled to be less than the ordinal transmitting rate of the passage in synchronism to the passing time of the elements. The concentrations of the elements of the sample is calculated based on output signals of the pulse counter concerning the elements of the standard and the sample and known concentration of the standard.
摘要:
An atomic absorption spectrophotometer for simultaneously measuring a plurality of elements different in kind from each other. A cylindrical heating furnace is provided for heating a sample being analyzed to dry, ash and atomize the sample thereby producing atomic vapor. A plurality of hollow-cathode discharge tubes corresponding in number to the elements being detected are arranged for simultaneously emitting light beams respectively containing line spectra of the respective elements, to cause the light beams to be incident upon the heating furnace at respective angles of inclination with respect to a central axis of the heating furnace. A plurality of spectral detection systems are arranged behind the heating furnace in relation to the angles of inclination, for respectively spectral-diffracting and receiving the light beams having their respective line spectra absorbed by the atomic vapor. A signal processing device is provided for carrying out calculation to obtain concentrations or quantities of the respective elements in the sample being analyzed, on the basis of respective ratios of atomic resonance absorption of the respective line spectra spectral-detected.