TALBOT X-RAY MICROSCOPE
    51.
    发明申请

    公开(公告)号:US20180261350A1

    公开(公告)日:2018-09-13

    申请号:US15954380

    申请日:2018-04-16

    Applicant: Sigray, Inc.

    CPC classification number: G21K1/025 G01N23/083 G01N2223/204 G21K7/00

    Abstract: Systems for x-ray microscopy using an array of micro-beams having a micro- or nano-scale beam intensity profile to provide selective illumination of micro- or nano-scale regions of an object. An array detector is positioned such that each pixel of the detector only detects x-rays corresponding to a single micro-or nano-beam. This allows the signal arising from each x-ray detector pixel to be identified with the specific, limited micro- or nano-scale region illuminated, allowing sampled transmission image of the object at a micro- or nano-scale to be generated while using a detector with pixels having a larger size and scale. Detectors with higher quantum efficiency may therefore be used, since the lateral resolution is provided solely by the dimensions of the micro- or nano-beams. The micro- or nano-scale beams may be generated using a arrayed x-ray source and a set of Talbot interference fringes.

    Semiconductor X-ray detector
    53.
    发明授权

    公开(公告)号:US10007009B2

    公开(公告)日:2018-06-26

    申请号:US15122456

    申请日:2015-04-07

    CPC classification number: G01T1/247 A61B6/032 G01V5/0025 G21K7/00

    Abstract: Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer comprising an electrode; an electronics layer, the electronics layer comprising: a substrate having a first surface and a second surface, an electronics system in or on the substrate, an electric contact on the first surface, a via, and a redistribution layer (RDL) on the second surface; wherein the RDL comprises a transmission line; wherein the via extends from the first surface to the second surface; wherein the electrode is electrically connected to the electric contact; wherein the electronics system is electrically connected to the electric contact and the transmission line through the via.

    ARRANGEMENT FOR X-RAY TOMOGRAPHY
    54.
    发明申请

    公开(公告)号:US20180100815A1

    公开(公告)日:2018-04-12

    申请号:US15728252

    申请日:2017-10-09

    Applicant: FEI Company

    Abstract: A method of investigating a specimen using X-ray tomography, comprising (a) mounting the specimen to a specimen holder, (b) irradiating the specimen with a beam of X-rays along a first line of sight through the specimen, and (c) detecting a flux of X-rays transmitted through the specimen and forming a first image. Then (d) repeating the steps (b) and (c) for a series of different lines of sight through the specimen, thereby producing a corresponding series of images. The method further comprises (e) performing a mathematical reconstruction on said series of images, so as produce a tomogram of at least part of the specimen, wherein the specimen is disposed within a substantially cylindrical metallic shell with an associated cylindrical axis, the beam of X-rays is produced by directing a beam of charged particles onto a zone of said metallic shell, so as to produce a confined X-ray source at said zone, and the series of different lines of sight is achieved by rotating said shell about said cylindrical axis, thereby causing relative motion of said zone relative to the specimen.

    X-RAY LASER MICROSCOPY SYSTEM AND METHOD

    公开(公告)号:US20180020996A1

    公开(公告)日:2018-01-25

    申请号:US15713645

    申请日:2017-09-23

    Abstract: Improved system and method of X-ray laser microscopy that combines information obtained from both X-ray diffraction and X-ray imaging methods. The sample is placed in an ultra-cold, ultra-low pressure vacuum chamber, and exposed to brief bursts of coherent X-ray illumination further concentrated using X-ray mirrors and pinhole collimation methods. Higher resolution data from a sample is obtained using hard X-ray lasers, such as free electron X-ray lasers, and X-ray diffraction methods. Lower resolution data from the same sample can be obtained using any of hard or soft X-ray laser sources, and X-ray imaging methods employing nanoscale etched zone plate technology. In some embodiments both diffraction and imaging data can be obtained simultaneously. Data from both sources are combined to create a more complete representation of the sample. Methods to further improve performance, such as concave or curved detectors, improved temperature control, and alternative X-ray optics are also disclosed.

    Semiconductor X-ray Detector
    56.
    发明申请

    公开(公告)号:US20180017686A1

    公开(公告)日:2018-01-18

    申请号:US15122456

    申请日:2015-04-07

    CPC classification number: G01T1/247 A61B6/032 G01V5/0025 G21K7/00

    Abstract: Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer comprising an electrode; an electronics layer, the electronics layer comprising: a substrate having a first surface and a second surface, an electronics system in or on the substrate, an electric contact on the first surface, a via, and a redistribution layer (RDL) on the second surface; wherein the RDL comprises a transmission line; wherein the via extends from the first surface to the second surface; wherein the electrode is electrically connected to the electric contact; wherein the electronics system is electrically connected to the electric contact and the transmission line through the via.

    X-ray laser microscopy system and method
    59.
    发明授权
    X-ray laser microscopy system and method 有权
    X射线激光显微镜系统及方法

    公开(公告)号:US09583229B2

    公开(公告)日:2017-02-28

    申请号:US15218017

    申请日:2016-07-23

    CPC classification number: G21K7/00 G01N23/20083 G01N2223/3103

    Abstract: Improved system and method of X-ray laser microscopy that combines information obtained from both X-ray diffraction and X-ray imaging methods. The sample is placed in an ultra-cold, ultra-low pressure vacuum chamber, and exposed to brief bursts of coherent X-ray illumination further concentrated using X-ray mirrors and pinhole collimation methods. Higher resolution data from a sample is obtained using hard X-ray lasers, such as free electron X-ray lasers, and X-ray diffraction methods. Lower resolution data from the same sample can be obtained using any of hard or soft X-ray laser sources, and X-ray imaging methods employing nanoscale etched zone plate technology. In some embodiments both diffraction and imaging data can be obtained simultaneously. Data from both sources are combined to create a more complete representation of the sample.

    Abstract translation: 改进的X射线激光显微镜系统和方法,结合了从X射线衍射和X射线成像方法获得的信息。 将样品置于超低温,超低压真空室中,暴露于使用X射线镜和针孔准直方法进一步浓缩的相干X射线照射的短暂阵列。 使用诸如自由电子X射线激光器的硬X射线激光器和X射线衍射方法获得来自样品的更高分辨率数据。 使用硬或软X射线激光源的任何一种可以获得来自相同样品的较低分辨率数据,以及使用纳米级蚀刻区域板技术的X射线成像方法。 在一些实施例中,可以同时获得衍射和成像数据。 来自两个来源的数据被组合以创建样本的更完整的表示。

    Inspection Apparatus, Inspection Method and Manufacturing Method
    60.
    发明申请
    Inspection Apparatus, Inspection Method and Manufacturing Method 有权
    检验仪器,检验方法及制造方法

    公开(公告)号:US20170045823A1

    公开(公告)日:2017-02-16

    申请号:US15230937

    申请日:2016-08-08

    Abstract: A product structure (407, 330′) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

    Abstract translation: 产品结构(407,330')形成有缺陷(360-366)。 在产品结构(604)上提供至少部分相干的EUV辐射的点(S),以捕获由产品结构散射之后由辐射形成的至少一个衍射图案(606)。 参考数据(612)描述了标称产品结构。 从捕获的图像数据计算产品结构的至少一个合成图像(616)。 将合成图像的数据与参考数据进行比较,以识别产品结构中的缺陷(660-666)。 在一个实施例中,使用串联重叠点(S(1)-S(N))获得多个衍射图案,并且使用衍射图案和相对位移的知识来计算合成图像。 EUV辐射可以具有5至50nm范围内的波长,接近感兴趣结构的尺寸。

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