公开(公告)号：US20110210412A1

公开(公告)日：2011-09-01

申请号：US13103293

申请日：2011-05-09

申请人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Yoshinobu ASAMI

发明人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Yoshinobu ASAMI

IPC分类号： H01L29/66

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a nonvolatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以通过重写来制造处理和伪造等以及包括存储器件的半导体器件，可以将数据添加到存储器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US20110115034A1

公开(公告)日：2011-05-19

申请号：US12732187

申请日：2010-03-26

申请人： Po-Yuan Lo ,  Yu-Rung Peng ,  Tarng-Shiang Hu ,  Yi-Jen Chan

发明人： Po-Yuan Lo ,  Yu-Rung Peng ,  Tarng-Shiang Hu ,  Yi-Jen Chan

IPC分类号： H01L29/792

CPC分类号： H01L51/0533 ,  H01L29/4908

摘要： A transistor including a substrate, a gate, a semiconductor layer, a stacked insulating layer and a source and a drain is provided. The gate is disposed on the substrate. The semiconductor layer is disposed on the substrate, and a first type carrier is the main carrier in the semiconductor layer. The stacked insulating layer is disposed between the semiconductor layer and the gate, and includes a first insulating layer and a second insulating layer. The first insulating layer contains a first group withdrawing the first type carrier, the second insulating layer contains a second group withdrawing a second type carrier, and the first insulating layer is disposed between the semiconductor layer and the second insulating layer. The source and the drain are disposed on the substrate and at two sides of the semiconductor layer.

摘要翻译： 提供了包括基板，栅极，半导体层，堆叠绝缘层以及源极和漏极的晶体管。 栅极设置在基板上。 半导体层设置在基板上，第一类型载体是半导体层中的主载流子。 堆叠的绝缘层设置在半导体层和栅极之间，并且包括第一绝缘层和第二绝缘层。 第一绝缘层包含第一组，第一组退出第一类型载体，第二绝缘层包含第二组，第二组退出第二类型载体，第一绝缘层设置在半导体层和第二绝缘层之间。 源极和漏极设置在衬底上并在半导体层的两侧。

公开(公告)号：US07932177B2

公开(公告)日：2011-04-26

申请号：US12199446

申请日：2008-08-27

申请人： Tomoaki Onoue ,  Takeshi Yasuda ,  Tetsuo Tsutsui

发明人： Tomoaki Onoue ,  Takeshi Yasuda ,  Tetsuo Tsutsui

IPC分类号： H01L21/4763

CPC分类号： H01L51/0533 ,  H01L21/31691 ,  H01L51/0537

摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.

摘要翻译： 提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。 在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。 这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。 第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

公开(公告)号：US07800102B2

公开(公告)日：2010-09-21

申请号：US11582467

申请日：2006-10-18

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/3274 ,  H01L51/0545

摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.

摘要翻译： 有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。 形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基和未取代或取代的C 2 -C 30杂芳基的末端基团。 在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。 因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。

公开(公告)号：US20100136755A1

公开(公告)日：2010-06-03

申请号：US12656316

申请日：2010-01-25

申请人： Woong GI JUN ,  Gee Sung CHAE ,  Jae Seok HEO

发明人： Woong GI JUN ,  Gee Sung CHAE ,  Jae Seok HEO

IPC分类号： H01L21/336

CPC分类号： H01L29/78669 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L51/0533 ,  H01L51/0545

摘要： A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.

摘要翻译： 在衬底上制造薄膜晶体管（TFT）的方法包括：形成栅电极; 形成与所述栅电极绝缘并与所述栅电极部分重叠的半导体层; 在栅电极和半导体层之间依次形成第一栅极绝缘层和第二栅极绝缘层，其中第一栅极绝缘层由不同于第二栅极绝缘层的材料形成，并且第一和第二栅极绝缘层中的至少一个包括溶胶 -复合; 以及在半导体层的两侧形成源极和漏极。

公开(公告)号：US20090278117A1

公开(公告)日：2009-11-12

申请号：US12244364

申请日：2008-10-02

申请人： Sang Chul LIM ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

发明人： Sang Chul LIM ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

IPC分类号： H01L51/40 ,  H01L51/00

CPC分类号： H01L51/0533 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

摘要： An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.

摘要翻译： 提供有机薄膜晶体管（OTFT），其制造方法和使用OTFT的生物传感器。 OTFT包括栅极电极，栅极绝缘层，源极和漏极电极以及设置在基板上的有机半导体层，并且还包括通过溶胶 - 凝胶法在栅极绝缘层和有机半导体层之间形成的界面层。 栅绝缘层由有机聚合物形成，界面层由无机材料形成。 OTFT采用插入在栅极绝缘层和有机半导体层之间的界面层，从而可以保护栅极绝缘层免受外部的侵蚀，从而可以提高栅极绝缘层与有机半导体层的粘附性，从而提高驱动稳定性。 此外，由于OTFT可以使用塑料基板，OTFT的制造便宜，因此OTFT可以用作一次性生物传感器。

公开(公告)号：US20090256138A1

公开(公告)日：2009-10-15

申请号：US12101942

申请日：2008-04-11

申请人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

发明人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/3125 ,  H01L51/0036 ,  H01L51/0533

摘要： Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 半导体层包含式（I）的半导体材料：其中R1和R2独立地选自烷基，取代的烷基，芳基和取代的芳基; 并且R 3和R 4独立地选自氢，烷基，取代的烷基，芳基和取代的芳基。 还存在硅烷化界面层，其具有从其表面朝向半导体层延伸的烷基侧链。

公开(公告)号：US20080210932A1

公开(公告)日：2008-09-04

申请号：US11885970

申请日：2006-03-22

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L51/10

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以在制造过程之后将数据添加到存储器件，并且可以防止通过重写来防止伪造等，以及包括存储器件的半导体器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US20080157071A1

公开(公告)日：2008-07-03

申请号：US12047654

申请日：2008-03-13

申请人： Taek AHN ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek AHN ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L51/30

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US20080012014A1

公开(公告)日：2008-01-17

申请号：US11819966

申请日：2007-06-29

申请人： Jin-Seong Park ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Min-Chul Suh

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A thin film transistor (TFT) has reduced contact resistance between an organic semiconductor layer and source and drain electrodes. In the TFT, organic semiconductor crystals can be grown satisfactorily so as to improve electrical properties of the TFT. A method of preparing the same and a flat panel display device including the TFT are disclosed.

摘要翻译： 薄膜晶体管（TFT）具有降低有机半导体层与源极和漏极之间的接触电阻。 在TFT中，可以令人满意地生长有机半导体晶体，以改善TFT的电性能。 公开了一种其制备方法和包括TFT的平板显示装置。