公开(公告)号：US08231730B2

公开(公告)日：2012-07-31

申请号：US12155762

申请日：2008-06-09

申请人： David D. McLean

发明人： David D. McLean

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/453

CPC分类号： C23C16/453 ,  C03C17/002 ,  C23C16/402 ,  F23D14/08 ,  F23D14/78 ,  F23D23/00 ,  F23D91/02

摘要： Certain example embodiments relate to a burner for use in combustion deposition depositing a coating on a substrate. First and second spaced-apart combustion gas manifolds are configured to respectively produce first and second flames (which may effectively combine to form a single flame front beyond the outer face of the burner in certain example embodiments). The first and second combustion gas manifolds form a precursor reaction zone therebetween. An adjustable precursor delivery manifold located between the first and second combustion gas manifolds is configured to receive a precursor used in forming the coating. The precursor delivery manifold is positioned so as to substantially directly provide the precursor to a desired or predetermined portion of the precursor reaction zone. The precursor delivery manifold includes first and second cooled walls arranged to reduce the occurrence of precursor pre-reactions upstream of the precursor reaction zone. The burners of certain example embodiments may be used to combustion deposition deposit metal oxide coatings onto glass substrates.

摘要翻译： 某些示例性实施例涉及用于在基板上沉积涂层的燃烧沉积中使用的燃烧器。 第一和第二间隔开的燃烧气体歧管被构造成分别产生第一和第二火焰（其在某些示例性实施例中可以有效地组合以形成超过燃烧器的外表面的单个火焰前沿）。 第一和第二燃烧气体歧管在它们之间形成前体反应区。 位于第一燃烧气体歧管和第二燃烧气体歧管之间的可调节前体输送歧管被配置成接收用于形成涂层的前体。 前体输送歧管被定位成基本上直接将前体提供到前体反应区域的期望的或预定的部分。 前体输送歧管包括布置成减少前体反应区上游的前体预反应的发生的第一和第二冷却壁。 某些示例性实施例的燃烧器可用于将金属氧化物涂层沉积在玻璃基板上。

公开(公告)号：US08053372B1

公开(公告)日：2011-11-08

申请号：US11520497

申请日：2006-09-12

申请人： Frank Greer ,  Karl Leeser

发明人： Frank Greer ,  Karl Leeser

IPC分类号： H01L21/36 ,  B01J19/08 ,  C23C16/453

CPC分类号： C23C16/45538 ,  C23C16/45523 ,  H01J37/32082 ,  H01J37/32137

摘要： The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving efficiency.

摘要翻译： 本发明涉及一种适用于沉积阻挡层，粘附层，种子层，低介电常数（低k）膜，高介电常数（高k）膜）和其它导电半导体膜的增强循环沉积工艺 ，和非导电膜。 沉积增强源自在等离子体中产生的离子。 所描述的技术减少了等离子体稳定化所需的时间，从而减少了沉积时间并提高了效率。

公开(公告)号：US20110120375A1

公开(公告)日：2011-05-26

申请号：US12950928

申请日：2010-11-19

申请人： Myung-Gon SONG ,  Jung-Rak Lee ,  Jae-Chul Do ,  Bu-Il Jeon

发明人： Myung-Gon SONG ,  Jung-Rak Lee ,  Jae-Chul Do ,  Bu-Il Jeon

IPC分类号： C23C16/453

CPC分类号： H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541

摘要： An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means.

摘要翻译： 一种用于处理衬底的设备包括：处理室，其通过盖和主体的组合提供反应空间; 反应空间中的基座，其上具有基板; 在反应空间上的多个等离子体源电极; 盖下方的多个第一下突出部; 以及与多个等离子体源电极对应的多个第一气体注入装置和与多个第一气体注入装置交替设置的多个第二气体注入装置。

公开(公告)号：US20100151130A1

公开(公告)日：2010-06-17

申请号：US11720851

申请日：2005-12-07

申请人： Johannes A.M. Ammerlaan ,  Ralph T.H. Maessen ,  Roland Weidl

发明人： Johannes A.M. Ammerlaan ,  Ralph T.H. Maessen ,  Roland Weidl

IPC分类号： C23C16/453

CPC分类号： C23C16/463 ,  C23C16/453 ,  C23C16/4586 ,  H01L21/67248

摘要： Method and apparatus for depositing film on flexible (plastic/metal) foil and/or temperature sensitive substrates (101) by combustion chemical vapor deposition (C-CVD). A substrate (101) is held in place to provide physical and conductive thermal contact between the substrate (101) and a substrate holder (102). The substrate holder (102) is cooled using a cooling fluid and the substrate (101) and burner are moved relative to each other as C-CVD takes place. Heating of the substrate (101) during C-CVD is controlled and deterioration by heating is avoided. The foil or substrate (101) is suitable, in particular, for use in flat and flexible displays.

摘要翻译： 通过燃烧化学气相沉积（C-CVD）在柔性（塑料/金属）箔和/或温度敏感基板（101）上沉积膜的方法和装置。 衬底（101）被保持就位以在衬底（101）和衬底保持器（102）之间提供物理和导电的热接触。 使用冷却流体对衬底保持器（102）进行冷却，并且当发生C-CVD时，衬底（101）和燃烧器相对于彼此移动。 控制C-CVD时的基板（101）的加热，避免加热劣化。 箔或衬底（101）特别适用于平面和柔性显示器。

公开(公告)号：US20090155619A1

公开(公告)日：2009-06-18

申请号：US11990475

申请日：2006-08-24

申请人： Douglas M. Nelson ,  Gary Nichol ,  Srikanth Varansi

发明人： Douglas M. Nelson ,  Gary Nichol ,  Srikanth Varansi

IPC分类号： H01L31/0216 ,  C23C16/453

CPC分类号： H01L31/02168 ,  H01L31/03762 ,  Y02E10/548 ,  Y10T428/12604 ,  Y10T428/265

摘要： A multi-layer thin film stack, particularly suitable as a component of a solar cell, is deposited on a transparent dielectric substrate. The multi-layer film stack comprises a transparent electrically conductive metal oxide layer deposited over the dielectric substrate, the conductive metal oxide layer having a refractive index less than 2.0, a light transmittance optimizing interlayer having a refractive index between 2.3 and 3.5, deposited over the electrically conductive metal oxide layer, and a silicon layer having a refractive index of at least 4.5 deposited over the light transmittance optimizing interlayer. The film stack can be deposited by any suitable method, but deposition of each of these layers by atmospheric chemical vapor deposition is preferred.

摘要翻译： 特别适合作为太阳能电池组件的多层薄膜叠层淀积在透明电介质基片上。 多层膜堆叠包括沉积在电介质基底上的透明导电金属氧化物层，导电金属氧化物层具有小于2.0的折射率，折射率在2.3和3.5之间的透光率优选中间层沉积在 导电金属氧化物层，以及沉积在透光率优选中间层上的具有至少4.5的折射率的硅层。 可以通过任何合适的方法沉积膜堆叠，但是优选通过大气化学气相沉积沉积这些层。

公开(公告)号：US20080305275A1

公开(公告)日：2008-12-11

申请号：US12216598

申请日：2008-07-08

申请人： Kazuo Ichikawa ,  Hiroshi Tanabe ,  Katsuhisa Yuda

发明人： Kazuo Ichikawa ,  Hiroshi Tanabe ,  Katsuhisa Yuda

IPC分类号： C23C16/453

CPC分类号： C23C16/0245 ,  H01L29/4908

摘要： An insulating film deposition chamber 40 has a plasma generator 14 having a plasma generation chamber 21 separated from the film deposition chamber 13 in which the substrate is arranged. A material gas is directly supplied to the film deposition chamber, and radicals are introduced into the film deposition chamber from the plasma generator, and a thin film is deposited on the substrate. Further, a cleaning gas feeder is added to the plasma generator. A cleaning gas is introduced through the cleaning gas feeder to produce plasma at the plasma generator to generate radicals, and the radicals are introduced into the film deposition chamber and irradiate the substrate to clean it.

公开(公告)号：US20080190560A1

公开(公告)日：2008-08-14

申请号：US11885625

申请日：2006-02-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/3065 ,  C23C16/453

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna. The planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween, the slow-wave plate and the microwave transmitting plate are made of the same material, and an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.

摘要翻译： 本发明是微波等离子体处理装置，其特征在于，包括：容纳被加工物的室; 处理气体供应单元，其将处理气体供应到所述室中; 微波发生源，其产生由于所述室中的处理气体而形成等离子体的微波; 波导单元，其将由微波发生源产生的微波引导到所述室; 由导电材料制成的平面天线，设置有用于将由波导单元引导的微波辐射到腔室的多个微波辐射孔; 由电介质材料制成的微波透射板，所述微波透射板用作所述室的顶壁，并且透过已经穿过所述平面天线的微波辐射孔的微波; 以及相对于微波透射板设置在平面天线的相反侧的慢波板，该慢波板具有缩短到达平面天线的微波的波长的功能。 平面天线和微波透射板彼此接触，基本上没有空气，慢波板和微波透射板由相同的材料制成，并且由慢波板形成的等效电路， 由于在室内形成的工艺气体，平面天线，微波透射板和等离子体满足谐振条件。

公开(公告)号：US20080075858A1

公开(公告)日：2008-03-27

申请号：US11859104

申请日：2007-09-21

申请人： Wonyong Koh

发明人： Wonyong Koh

IPC分类号： C23C16/453 ,  B05C11/10

CPC分类号： C23C16/405 ,  C23C16/06 ,  C23C16/403 ,  C23C16/45544 ,  C23C16/54 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3162 ,  H01L21/31645

摘要： ALD apparatuses and methods of depositing multiple layers employ a plurality of reaction spaces. The reaction chamber includes inlets configured to introduce reactant gases sufficient to achieve a first ALD process into a first set of the reaction spaces for a first period of time such that the reactant gases are not mixed one another. The ALD apparatus further includes a driver configured to move the substrates through all of the of reaction spaces in a plurality of cycles during the first period such that a first thin film is deposited by space-divided ALD on each of the substrates. Other inlets introduce reactant gases sufficient to achieve a second ALD process into a second set of the reaction spaces for a second period of time, while purge gas is fed to the first set of reaction spaces. The driver moves the substrates through all of the reaction spaces in a plurality of cycles during the second period such that a second thin film of a different composition from the first film is deposited by space-divided ALD on each of the substrates. Additional sets of reaction spaces can be added for third, fourth, etc. ALD processes. The configuration of the ALD apparatus permits deposition of nanolaminate films on a plurality of substrates for a relatively short period of time while preventing undesired deposition by reaction between the reactant gases.

摘要翻译： ALD装置和沉积多层的方法采用多个反应空间。 反应室包括入口，其构造成将足以在第一时间段内实现第一组反应空间的第一ALD工艺的反应气体引入，使得反应气体不彼此混合。 所述ALD装置还包括驱动器，所述驱动器被配置为在所述第一时段期间以多个周期移动所述基板通过所有的反应空间，从而通过每个所述基板上的空间划分的ALD沉积第一薄膜。 其它入口引入足以在第二时间段内将第二组ALD工艺进入第二组反应空间的反应气体，同时吹扫气体被供给到第一组反应空间。 驱动器在第二周期期间以多个周期移动基板穿过所有反应空间，从而通过在每个基板上的空间划分的ALD沉积与第一膜不同组成的第二薄膜。 可以为第三，第四等ALD工艺添加额外的反应空间。 ALD装置的配置允许在相当短的时间段内在多个基板上沉积纳米层间膜，同时防止反应气体之间的反应引起不希望的沉积。

公开(公告)号：US06955066B2

公开(公告)日：2005-10-18

申请号：US10383164

申请日：2003-03-06

申请人： Thomas A. Seeman

发明人： Thomas A. Seeman

IPC分类号： C03B9/38 ,  C03B11/12 ,  C03B29/00 ,  C03B40/02 ,  C03B40/027 ,  C03B40/04 ,  C03C20060101 ,  C23C16/26 ,  C23C16/453 ,  C03B40/00

CPC分类号： C23C16/26 ,  C03B9/3808 ,  C03B9/3891 ,  C03B11/12 ,  C03B29/00 ,  C03B40/027 ,  C23C16/453

摘要： A method and system for coating a glass contacting surface with a thermal barrier and lubricious coating. The system uses a novel exterior surface mixing tip device wherein oxygen is supplied through a predetermined portion of one supply line, and a predetermined gas is supplied through a predetermined portion of another supply line enveloping the first predetermined portion.

摘要翻译： 一种用热屏障和光滑涂层涂覆玻璃接触表面的方法和系统。 该系统使用新颖的外表面混合尖端装置，其中通过一条供应管线的预定部分供应氧气，并且通过包围第一预定部分的另一供应管线的预定部分供应预定气体。

公开(公告)号：US06911093B2

公开(公告)日：2005-06-28

申请号：US10453821

申请日：2003-06-02

申请人： David Stacey ,  Zach Prather ,  Jonathan Allinger

发明人： David Stacey ,  Zach Prather ,  Jonathan Allinger

IPC分类号： B23P11/00 ,  C23C16/00 ,  C23C16/44 ,  C23C16/453 ,  H01J37/32

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  Y10T29/53443 ,  Y10T29/53652 ,  Y10T29/53709

摘要： A lid liner for a chemical vapor deposition chamber includes an annular portion having an inner surface for surrounding a reaction volume within the chemical deposition chamber; a mounting tab formed on an outer surface of the annular portion; and a hole formed in the mounting tab for receiving a fastener wherein the hole does not penetrate the inner surface of the annular portion.

摘要翻译： 用于化学气相沉积室的盖衬垫包括具有内表面的环形部分，用于围绕化学沉积室内的反应体积; 形成在所述环形部分的外表面上的安装突片; 以及形成在所述安装突片中用于接收紧固件的孔，其中所述孔不穿透所述环形部分的内表面。