公开(公告)号：US4717855A

公开(公告)日：1988-01-05

申请号：US832952

申请日：1986-02-26

Applicant: Jan Zwier ,  Johannes H. A. Vasterink

Inventor： Jan Zwier ,  Johannes H. A. Vasterink

IPC: H01J1/308 ,  H01J19/24

CPC classification number: H01J1/308

Abstract: The efficiency of a semiconductor cathode can be increased by bombarding the electron-emitting regions (8) with an electron beam (8), which frees the surface from adhered oxygen particles. The electron beam preferably originates from a second semiconductor cathode (42), which has an opening (42) for passing the electron beam (20) of the first semiconductor cathode (20). Alternatively, both semiconductor cathodes can be realized in one semiconductor body.

Abstract translation: 通过用电子束（8）轰击电子发射区域（8）可以提高半导体阴极的效率，这使得表面免受附着的氧颗粒的影响。 电子束优选地源于具有用于使第一半导体阴极（20）的电子束（20）通过的开口（42）的第二半导体阴极（42）。 或者，两个半导体阴极都可以在一个半导体本体中实现。

公开(公告)号：US4682074A

公开(公告)日：1987-07-21

申请号：US793883

申请日：1985-11-01

Applicant: Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

IPC: H01J29/04 ,  H01J1/308 ,  H01J3/02 ,  H01J3/18 ,  H01J29/48

CPC classification number: H01J29/481 ,  H01J3/021

Abstract: A device for recording or displaying images or for electron lithographic or electron microscopic uses, comprising in an evacuated envelope (1) a target (7) on which at least one electron beam (6) is focussed. This beam is generated by means of a semiconductor device (10) which comprises an electrically insulating layer (42) having an aperture (38) through which the beam passes. The layer carries at least four beam-forming electrodes (43 through 50) which are situated at regular intervals around the aperture (38). Each of the electrodes has such a potential that an n-pole field or a combination of n-pole fields is generated, where n is an even integer from 4 through 16. A suitable choice of the n-pole field will make it possible to impart substantially any desired shape to the beam (6) and thus the focus on the target.

Abstract translation: 一种用于记录或显示图像或电子光刻或电子显微镜用途的装置，包括在真空的外壳（1）中聚焦有至少一个电子束（6）的靶（7）。 该光束通过半导体器件（10）产生，该半导体器件（10）包括具有光束通过的孔（38）的电绝缘层（42）。 该层承载至少四个波束形成电极（43至50），其围绕孔（38）以规则的间隔设置。 每个电极具有产生n极场或n极场的组合的电位，其中n是从4到16的偶数整数.n极场的适当选择将使得可以 将基本上任何期望的形状赋予梁（6），从而将焦点赋予目标。

公开(公告)号：US4303930A

公开(公告)日：1981-12-01

申请号：US84041

申请日：1979-10-12

Applicant: Gerardus G. P. Van Gorkom ,  Arthur M. E. Hoeberechts

Inventor： Gerardus G. P. Van Gorkom ,  Arthur M. E. Hoeberechts

IPC: B01J23/86 ,  C07B61/00 ,  C07C1/00 ,  C07C1/04 ,  C07C67/00 ,  H01J1/308 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J31/38 ,  H01L29/90

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: The invention relates to a semiconductor, cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

Abstract translation: 本发明涉及分别具有这样的阴极的半导体，阴极和相机管和显示管，其基于平行于半导体本体的表面延伸的p-n结中的雪崩击穿。 释放的电子通过设置在器件上的加速电极获得额外的能量。 所产生的效率提高使得平面硅技术中的这种阴极的制造成为可能。 由于在雪崩击穿时p-n结的耗尽区不延伸到表面，所释放的电子显示出尖锐的能量分布。 这使得这种阴极特别适用于照相机管。 此外，他们还可以应用于显示管和平板显示器。

公开(公告)号：US4012760A

公开(公告)日：1977-03-15

申请号：US669237

申请日：1976-03-22

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L27/14

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract translation: 一种半导体冷发射器件，包括至少两个不同的半导体，以及具有n型导电性的第一区域和p型导电性的第二区域以及有效禁止带宽小于 第一区域和用于向所述结点施加电压以使从所述第一区域注入到所述第二区域的电子从所述第二区域的表面发射到外部的装置。

公开(公告)号：US3872489A

公开(公告)日：1975-03-18

申请号：US33527373

申请日：1973-02-22

Applicant: GTE LABORATORIES INC

Inventor： HAGENLOCHER ARNO K

IPC: H01J1/308 ,  H01L3/08

CPC classification number: H01J1/308

Abstract: An electron emitter comprising a body of a wide band gap material using double injection space-charge limited current. By using double injection of carriers to establish space-charge limited currents in high resistivity p-type semiconductors, the number of minority carriers can be increased considerably without raising the Fermi level above mid band gap. By using such double injection space-charge limited current a sufficient amount of large energy minority carriers are placed in the conduction band in a p-type semiconductor. A monoatomic layer of cesium and oxygen is positioned on the positively biased contact. This places a negative electron affinity surface layer on the device. The electrons in the conduction band then have enough energy to impel electrons into a vacuum.

Abstract translation: 一种电子发射器，包括使用双注入空间电荷限制电流的宽带隙材料体。 通过使用双重注入载流子在高电阻率p型半导体中建立空间电荷限制电流，可以显着增加少数载流子的数量，而不会使费米能级高于中间带隙。 通过使用这种双注入空间电荷限制电流，在p型半导体中的导带中放置足够量的大能量少数载流子。 铯和氧的单原子层位于正偏压接触件上。 这在设备上放置负电子亲和性表面层。 导带中的电子然后具有足够的能量来推动电子进入真空。

公开(公告)号：US3821773A

公开(公告)日：1974-06-28

申请号：US22006472

申请日：1972-01-24

Applicant: BETA IND INC

Inventor： MIZE J

IPC: H01J1/308 ,  H01S5/04 ,  H01L5/00

CPC classification number: H01S5/04 ,  H01J1/308

Abstract: CHARGE CARRIERS ARE EMITTED FROM THE SURFACE OF A HETEROJUNCTION REGION WHICH IS FORMED WITHIN THE FILM-LIKE BODY OF A SEMICONDUCTOR MATERIAL. THE EMITTING REGION IS DEFINED BY AN INTERFACE WHICH IS GENERALLY SEMICIRCULAR IN CROSS-SECTION OR HAS AT LEAST A SUBSTANTIAL PORTION NEITHER PARA LLEL NOR PERPENDICULAR TO THE SURFACE OF THE FILM-LIKE BODY. THE THICKNESS OF THE FILM-LIKE BODY IS SOMEWHAT GREATER THAN THE DEPTH OF THE EMITTING REGION SO THAT CONTINUOUS UNINTERRUPTED AND GENERALLY SEMI-CYLINDRICAL INNER AND OUTER DEPLETION REGIONS EXIST ADJACENT THE INTERFACE. WHEN A VOLTAGE IN APPLIED ACROSS THE FILM-LIKE BODY AND HENCE ACROSS THE EMITTING REGION, THE DEPLETION REGIONS DISTORT IN A PARTICULAR FASHION AND PRODUCE AN ELECTRIC FIELD WITHIN THE EMITTING REGION. ELECTRONS CROSSING THE INTERFACE ARE "HEATED BY THIS FIELD TO A DEGREE PREMITTING ELECTRON EMISSION FROM THE SURFACE OF THE EMITTING REGION. THE ELECTRON EMISSION MAY BE VARIED BY ALTERING THE VOLTAGE APPLIED ACROSS THE JUNCTION.

公开(公告)号：US3478213A

公开(公告)日：1969-11-11

申请号：US3478213D

申请日：1967-09-05

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F ,  WASSERMAN RALPH

IPC: H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J39/12

CPC classification number: H01J1/34 ,  H01J1/308 ,  H01J1/32 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/12

公开(公告)号：US20150206692A1

公开(公告)日：2015-07-23

申请号：US14599988

申请日：2015-01-19

Applicant: TSINGHUA UNIVERSITY ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  DE-JIE LI ,  CHUN-HAI ZHANG ,  DUAN-LIANG ZHOU ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J29/04 ,  H01J29/18 ,  H01J1/308

CPC classification number: H01J29/18 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes.

Abstract translation: 电子发射装置包括多个第一电极和多个彼此相交的第二电极以限定多个交点。 电子发射单元在每个交叉点的每一个处夹在第一电极和第二电极之间，其中电子发射单元包括层叠在一起的半导体层和绝缘层，半导体层限定多个孔，碳纳米管 层覆盖孔的数量，并且一部分碳纳米管层悬浮在孔的数量上。

公开(公告)号：US20150170864A1

公开(公告)日：2015-06-18

申请号：US14297408

申请日：2014-06-05

Applicant: Altera Corporation

Inventor： Michael Brassington

IPC: H01J1/308

CPC classification number: H01J1/3044

Abstract: In an illustrative embodiment, a three electrode circuit element comprises an insulating material, a cavity in the insulating material, first and second electrodes spaced apart in the cavity by a distance small enough that electron emission is caused when suitable operating voltages are applied to the first and second electrodes, and a gate electrode near one of the first and second electrodes. A voltage applied to the gate electrode can control current flow between the first and second electrodes. The circuit element may be realized in a planar structure in which the electrodes are formed in substantially the same plane; or it may be a multi-layer device in which some or all of the electrodes are in separate layers of conductive material. Methods for forming the circuit element are also disclosed. Illustrative applications of the three electrode circuit element to provide standard circuit functions are also disclosed.

Abstract translation: 在说明性实施例中，三电极电路元件包括绝缘材料，绝缘材料中的空腔，在空腔中间隔开距离足够小的距离的电极发射的第一和第二电极，当适当的工作电压施加到第一 和第二电极，以及靠近第一和第二电极之一的栅电极。 施加到栅电极的电压可以控制第一和第二电极之间的电流。 电路元件可以以平面结构实现，其中电极形成在基本相同的平面中; 或者它可以是其中部分或全部电极处于分开的导电材料层的多层器件。 还公开了形成电路元件的方法。 还公开了三电极电路元件提供标准电路功能的说明性应用。

公开(公告)号：US20150060757A1

公开(公告)日：2015-03-05

申请号：US14471713

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-gu LEE ,  Shang-hyeun PARK ,  Yong-chul KIM ,  Chang-soo LEE ,  Do-yoon KIM

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J35/065 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或包括覆盖该开口的石墨烯片的栅电极。 制造栅电极的方法可以包括：在导电膜的一个表面上形成石墨烯薄膜; 在所述导电膜的另一表面上形成具有蚀刻开口的掩模层，其中所述蚀刻开口暴露所述导电膜的一部分; 通过蚀刻开口部分去除导电膜以部分地暴露石墨烯薄膜; 和/或去除掩模层。