Abstract:
A semiconductor device includes a semiconductor substrate including an in-cell area and a scribe lane defining the in-cell area, a first overlay pattern on the semiconductor substrate, and a second overlay pattern adjacent to the first overlay pattern, wherein the first overlay pattern is a diffraction-based overlay (DBO) pattern and the second overlay pattern is a scanning electron microscope (SEM) overlay pattern.
Abstract:
An X-ray photographing apparatus includes: a plurality of X-ray generators which is two-dimensionally arranged and independently generates X-rays; and a plurality of X-ray detectors which is arranged in a one-to-one correspondence with the plurality of X-ray generators and independently detects the X-rays generated by the plurality of X-ray generators.
Abstract:
An X-ray source device includes a substrate, a cathode electrode on the substrate, an emitter on the cathode electrode, an insulation body around the cathode electrode, a gate electrode on the insulation body, a first secondary electron emission layer at a side wall of the gate electrode and emitting secondary electrons upon collision with an electron beam emitted by the emitter, and an anode electrode separated from the gate electrode.
Abstract:
An x-ray generator includes a housing, a cathode block that is arranged in the housing and emits electrons via a field emission scheme, an anode block that is arranged in the housing and generates x-rays in response to the electrons emitted from the cathode block and collide with the anode block, and a heat sink block that contacts the cathode block and dissipates heat generated therein to an outside of the housing.
Abstract:
An X-ray imaging system includes an X-ray generator including a plurality of X-ray generation units, where the plurality of X-ray generation units is two-dimensionally arranged, and operates independently of each other; and an X-ray detector spaced apart from the X-ray generator, where the X-ray detector includes a plurality of X-ray detection units corresponding to the plurality of X-ray generation units, where a space is defined between the X-ray generator and the X-ray detector.
Abstract:
A mesh electrode adhesion structure includes: a substrate, and an opening defined in the substrate; a mesh electrode on the substrate, and a first combination groove defined in the mesh electrode; and an adhesion layer between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.
Abstract:
Provided are methods of aging an x-ray generator having carbon nanotube electron emitters. The method of aging an x-ray generator that includes a cathode, a gate electrode, and an anode, includes applying a desired, or alternatively predetermined anode voltage to the anode, and applying a direct current pulse voltage to the gate electrodes to emit electrons from electron emitters. The method further includes maintaining an anode current formed by electrons generated from the electron emitters constant.
Abstract:
An electron emission device includes a cathode electrode; a mesh-shaped gate electrode spaced apart from the cathode electrode; a plurality of gate spacers between the cathode electrode and the gate electrode; and a plurality of electron emission sources between the cathode electrode and the gate electrode, and alternating with the plurality of gate spacers.
Abstract:
A carbon nanotube paste composition including carbon nanotubes, an organopolysiloxane including an alkenyl group, an organohydrogensiloxane including a hydrosilyl group, and a first catalyst effective to catalyze an addition reaction between the alkenyl group and the hydrosilyl group.
Abstract:
A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.