Abstract:
A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam.
Abstract:
An electrostatic lens includes multiple electrodes each having a through hole, and an insulating spacer that is provided between the electrodes and that fixes an interval between the electrodes. Both surfaces of the spacer are bonded with the electrodes opposing each other so that the spacer is integral with both the electrodes. A protective film is disposed on both surfaces of each of the electrodes. The protective film is present on the interior wall of the through hole and in a region around the through hole on the surface of the electrode. The region extends continuously from the interior wall to an end portion of the electrode. The protective film is not present at an interface between the electrode and the spacer.
Abstract:
An electrostatic lens includes multiple electrodes each having a through hole, and an insulating spacer that is provided between the electrodes and that fixes an interval between the electrodes. Both surfaces of the spacer are bonded with the electrodes opposing each other so that the spacer is integral with both the electrodes. A protective film is disposed on both surfaces of each of the electrodes. The protective film is present on the interior wall of the through hole and in a region around the through hole on the surface of the electrode. The region extends continuously from the interior wall to an end portion of the electrode. The protective film is not present at an interface between the electrode and the spacer.
Abstract:
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
Abstract:
The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.
Abstract:
Disclosed is an electrode member which has spherical sections, each of which configures a part of a sphere, and a plurality of spherical electrode sections wherein the radiuses of the spherical sections are different from each other. The spherical electrode sections are disposed in a state wherein the center points of the respective spheres match each other and the spherical electrode sections are insulated from each other such that voltages can be independently applied thereto. Electron-passing openings for straightly taking out electrons, which are moving from the center point, to the outside of the electrode are formed at positions where the spherical electrode sections and a plurality of straight lines radially extending from the center point intersect each other.
Abstract:
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
Abstract:
An ion transfer arrangement for transporting ions between higher and lower pressure regions of a mass spectrometer includes an electrode assembly (120) with a first plurality of ring electrodes (205) arranged in alternating relation with a second plurality of ring electrodes (210). The first plurality of ring electrodes (205) are narrower than the second plurality of ring electrodes (210) in a longitudinal direction, but the first plurality of ring electrodes have a relatively high magnitude voltage of a first polarity applied to them whereas the second plurality of ring electrodes (210) have a relatively lower magnitude voltage applied to them, of opposing polarity to that applied to the first set of ring electrodes (205). In this manner, ions passing through the ion transfer arrangement experience spatially alternating asymmetric electric fields that tend to focus ions away from the inner surface of the channel wall and towards the channel plane or axis of symmetry.
Abstract:
A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.
Abstract:
A charged-particle beam system has a demagnifying lens for reducing the dimensions of an electron beam produced from an electron beam source, an objective lens for focusing the demagnified beam onto the surface of a target, a first deflector located before the demagnifying lens, a second deflector placed such that the deflection field produced by it is totally or partially superimposed on the objective lens field, and a third deflector located in a stage following the second deflector. An image of the light source is created by the demagnifying lens. An image of the light source image is formed on the target by the objective lens.