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    MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM
    3.
    发明申请
    MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM 有权
    多束光束粒子光学系统

    公开(公告)号：US20110068276A1

    公开(公告)日：2011-03-24

    申请号：US12885380

    申请日：2010-09-17

    申请人： Pieter Kruit ,  Aernout Christiaan Zonnevylle

    发明人： Pieter Kruit ,  Aernout Christiaan Zonnevylle

    IPC分类号： G21K1/08

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/1477 ,  H01J2237/0435 ,  H01J2237/04924 ,  H01J2237/1205

    摘要： The invention relates to a multiple beam charged particle optical system comprising: a charged particle source for generating a plurality of charged particle beamlets, and charged particle optics for directing the charged particle beamlets from the charged particle source towards a target, wherein each charged particle beamlet defines a beamlet centre line, said charged particle optics comprising one or more electrostatic lens arrays, each comprising two or more array electrodes for generating a plurality of electrostatic lenslets, wherein each lenslet is arranged for focusing a corresponding charged particle beamlet, and wherein each lenslet defines a lenslet optical axis, wherein at least one of said one or more electrostatic lens arrays comprises one or more off-axis electrostatic lenslets, wherein the beamlet centre line of the corresponding charged particle beamlet passes through said off-axis electrostatic lenslet at a distance from its lenslet optical axis.

    摘要翻译： 本发明涉及一种多光束带电粒子光学系统，包括：用于产生多个带电粒子子束的带电粒子源和用于将带电粒子子束从带电粒子源引向靶的带电粒子光学器件，其中每个带电粒子子束 定义了子束中心线，所述带电粒子光学器件包括一个或多个静电透镜阵列，每个静电透镜阵列包括用于产生多个静电小透镜的两个或更多个阵列电极，其中每个小透镜被布置用于聚焦相应的带电粒子子束，并且其中每个小透镜 限定了小透镜光轴，其中所述一个或多个静电透镜阵列中的至少一个包括一个或多个离轴静电小透镜，其中相应带电粒子子束的子束中心线以一定距离穿过离轴静电透镜 从其小透镜光轴。

    CHARGED PARTICLE MULTI-BEAMLET APPARATUS
    6.
    发明申请
    CHARGED PARTICLE MULTI-BEAMLET APPARATUS 有权
    充电颗粒多波束装置

    公开(公告)号：US20120305798A1

    公开(公告)日：2012-12-06

    申请号：US13484231

    申请日：2012-05-30

    申请人： Aernout Christiaan Zonnevylle ,  Pieter Kruit

    发明人： Aernout Christiaan Zonnevylle ,  Pieter Kruit

    IPC分类号： G21K5/04 ,  H01J3/26 ,  H01J3/18 ,  H01J3/14

    CPC分类号： H01J37/3007 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/04924 ,  H01J2237/1205 ,  H01J2237/15 ,  H01J2237/1532

    摘要： The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.

    摘要翻译： 本发明涉及一种用于在带电粒子多子束装置中操纵多个带电粒子束的一个或多个带电粒子束的方法和装置。 所述操纵器装置包括平面基板，所述平面基板包括在所述基板的平面中的通孔的阵列，这些通孔中的每一个布置成使所述至少一个带电粒子束通过，其中每个所述通孔具有一个或 布置在通孔周围的更多电极和用于向每个通孔的一个或多个电极提供控制信号的电子控制电路，其中电子控制电路被布置用于通过开口提供每个个体的一个或多个电极， 最小的模拟可调电压。

    Multiple beam charged particle optical system
    7.
    发明授权
    Multiple beam charged particle optical system 有权
    多光束带电粒子光学系统

    公开(公告)号：US08294117B2

    公开(公告)日：2012-10-23

    申请号：US12885380

    申请日：2010-09-17

    申请人： Pieter Kruit ,  Aernout Christiaan Zonnevylle

    发明人： Pieter Kruit ,  Aernout Christiaan Zonnevylle

    IPC分类号： G21K1/08

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/1477 ,  H01J2237/0435 ,  H01J2237/04924 ,  H01J2237/1205

    摘要： The invention relates to a multiple beam charged particle optical system comprising: a charged particle source for generating a plurality of charged particle beamlets, and charged particle optics for directing the charged particle beamlets from the charged particle source towards a target, wherein each charged particle beamlet defines a beamlet center line, said charged particle optics comprising one or more electrostatic lens arrays, each comprising two or more array electrodes for generating a plurality of electrostatic lenslets, wherein each lenslet is arranged for focusing a corresponding charged particle beamlet, and wherein each lenslet defines a lenslet optical axis, wherein at least one of said one or more electrostatic lens arrays comprises one or more off-axis electrostatic lenslets, wherein the beamlet center line of the corresponding charged particle beamlet passes through said off-axis electrostatic lenslet at a distance from its lenslet optical axis.

    摘要翻译： 本发明涉及一种多光束带电粒子光学系统，包括：用于产生多个带电粒子子束的带电粒子源和用于将带电粒子子束从带电粒子源引向靶的带电粒子光学器件，其中每个带电粒子子束 定义了子束中心线，所述带电粒子光学器件包括一个或多个静电透镜阵列，每个静电透镜阵列包括用于产生多个静电小透镜的两个或更多个阵列电极，其中每个小透镜被布置用于聚焦相应的带电粒子子束，并且其中每个小透镜 限定了小透镜光轴，其中所述一个或多个静电透镜阵列中的至少一个包括一个或多个离轴静电小透镜，其中相应带电粒子子束的子束中心线以一定距离穿过离轴静电透镜 从其小透镜光轴。

    Lithography system, method of heat dissipation and frame
    8.
    发明授权
    Lithography system, method of heat dissipation and frame 有权
    平版印刷系统，散热方法和框架

    公开(公告)号：US08325321B2

    公开(公告)日：2012-12-04

    申请号：US11880833

    申请日：2007-07-24

    申请人： Pieter Kruit ,  Michel Pieter Dansberg ,  Marco Jan-Jaco Wieland

    发明人： Pieter Kruit ,  Michel Pieter Dansberg ,  Marco Jan-Jaco Wieland

    IPC分类号： F28D15/00 ,  G03B27/42 ,  G03B27/52 ,  G03B27/58 ,  G03B27/62

    CPC分类号： G03F7/70875

    摘要： The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.

    摘要翻译： 本发明涉及用于将图像或图像图案投影到诸如晶片的靶上的光刻系统。 通过图像或图像图案的投影而累积在目标物中的能量从所述目标去除，使得通过局部和/或整体加热的膨胀被限制到相关的预定义值，并且其中这种除热由 在与所述靶导致热接触的吸热材料中使用相变。 作为进一步的阐述，这种材料可以与具有优异传热系数的另外的材料结合使用，并且可以结合在包含具有优良传热系数的材料的乳液中。 所述材料可以例如 粘附到目标的底面，并且也可以包括在框架中。

    MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM
    9.
    发明申请
    MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM 有权
    多束光束粒子光学系统

    公开(公告)号：US20120211677A1

    公开(公告)日：2012-08-23

    申请号：US13461594

    申请日：2012-05-01

    申请人： Pieter Kruit ,  Yanxia Zhang ,  Matijn J. Van Bruggen ,  Stijn Willem Herman Karel Steenbrink

    发明人： Pieter Kruit ,  Yanxia Zhang ,  Matijn J. Van Bruggen ,  Stijn Willem Herman Karel Steenbrink

    IPC分类号： G21K5/10

    CPC分类号： H01J37/12 ,  H01J37/153 ,  H01J2237/04924 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/317

    摘要： The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

    摘要翻译： 本发明涉及一种多束带电粒子光学系统，其包括具有至少一个具有孔的电极的静电透镜结构，其中由所述孔处的所述电极实现的透镜场的有效尺寸最小化。 该系统可以包括发散的带电粒子束部分，其中包括透镜结构。 透镜的物理尺寸最终变小，特别是小于1mm，更特别地小于几十微米。 在进一步的阐述中，透镜与限流孔结合，相对于所述结构的透镜对准，所述透镜中由所述电流限制孔影响的虚拟孔位于最小化像差总数的最佳位置。

    System, method and apparatus for multi-beam lithography including a dispenser cathode for homogeneous electron emission
    10.
    发明授权
    System, method and apparatus for multi-beam lithography including a dispenser cathode for homogeneous electron emission 有权
    用于多光束光刻的系统，方法和装置，包括用于均匀电子发射的分配器阴极

    公开(公告)号：US07710009B2

    公开(公告)日：2010-05-04

    申请号：US11650310

    申请日：2007-01-05

    申请人： Stijn Willem Herman Karel Steenbrink ,  Pieter Kruit

    发明人： Stijn Willem Herman Karel Steenbrink ,  Pieter Kruit

    IPC分类号： H01J19/14 ,  H01J1/20 ,  H01J1/14 ,  H01J1/28

    CPC分类号： H01J37/065 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/28 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31754 ,  H01J2237/31774

    摘要： A dispenser cathode which comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, said emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.

    摘要翻译： 分配器阴极，其包括排放表面，用于材料释放的储存器，当被加热时，功能降低颗粒和至少一个通道，用于允许功能降低颗粒从所述储存器扩散到所述发射表面，所述发射 表面包括至少一个发射区域和至少一个覆盖有发射抑制材料并且围绕每个发射区域的非发射区域，所述非发射区域包括将所述储层与所述非发射区域连接的至少一个通道，并在 从放射区域的扩散长度距离，用于允许功能降低颗粒从所述储存器扩散到所述发射区域。