公开(公告)号：US3592937A

公开(公告)日：1971-07-13

申请号：US3592937D

申请日：1967-12-06

申请人： SIEMENS AG

发明人： EMEIS REIMER

IPC分类号： C30B13/28 ,  B01D9/00

CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10T82/27 ,  Y10T117/1084 ,  Y10T279/14

摘要： IN DEVICE FOR FLOATING ZONE MELTING A CRYSTALLINE ROD INCLUDING A REMOVABLE HOLDER MOUNTED ON THE END OF A SUBSTANTIALLY VERTICAL HOLDER SHAFT FOR END-SUPPORTING A SUBSTANTIALLY VERTICAL CRYSTALLINE ROD COAXIAL TO THE HOLDER

SHAFT, THE IMPROVEMENT THEREIN COMPRISING SEPARATE MEANS FOR RESPECTIVELY PREVENTING RADIAL DISPLACEMENT OF THE END HOLDER AND ANGULAR DEVIATION THEREOF RELATIVE TO THE SHAFT.

公开(公告)号：US3592611A

公开(公告)日：1971-07-13

申请号：US3592611D

申请日：1968-10-25

申请人： SIEMENS AG

发明人： EDER GEORG ,  EMEIS REIMER ,  KELLER WOLFGANG

IPC分类号： C30B13/28 ,  C30B13/32 ,  B01J17/10

CPC分类号： C30B13/285 ,  C30B13/32 ,  Y10S117/911 ,  Y10T74/18656 ,  Y10T117/1084

摘要： APPARATUS FOR REFINING A ROD ACCORDING TO THE FLOATINGZONE MELTING TECHNIQUE INCLUDES ROTARY SHAFT MEANS ADAPTED TO CARRY AND ROTATE A ROD DURING SUBJECTION THEREOF TO THE FLOATING-ZONE MELTING TECHNIQUE, PLAY-FREE WORMDRIVE MEANS OPERATIVELY CONNECTED TO THE ROTARY SHAFT MEANS FOR ROTATING THE LATTER, CARRIAGE MEANS CARRYING THE ROTARY SHAFT MEANS, BALL-BEARING GUIDE MEANS GUIDING THE CARRIAGE MEANS FOR MOVEMENT, AND ROTARY BALL-BEARING SPINDLE MEANS OPERATIVELY CONNECTED TO THE CARRIAGE MEANS FOR DISPLACING THE LATTER, SO THAT THE ROD IS MAINTAINED FREE OF MECHANICAL VIBRATIONS DURING TREATMENT OF THE ROD ACCORDING TO THE FLOATING-ZONE MELTING TECHNIQUE.

D R A W I N G

公开(公告)号：US20240309540A1

公开(公告)日：2024-09-19

申请号：US18550134

申请日：2022-03-01

申请人： SILTRONIC AG

发明人： Patrick Moos

IPC分类号： C30B13/28 ,  C30B29/06

CPC分类号： C30B13/285 ,  C30B29/06

摘要： The invention relates to a method and a device for pulling a monocrystalline silicon rod in a pulling system for zone melting, the method comprising the following steps: (I) providing a stock rod made of silicon, which comprises an azimuthal groove at one end; (2) attaching a lower part, which comprises three gripping arms, each gripping arm being shaped such that one end fits into the azimuthal groove of the stock rod and another end is rotatably attached to the lower part; (3) suspending the lower part, together with the stock rod, on an upper part, which contains a connecting element connected to a pulling shaft of the zone-melting pulling system, such that the upper part and the lower part are radially interlockingly connected to each other, the upper part comprising an element for radial orientation, and three length-adjustable spacing elements being attached to the upper part such that the spacing elements can apply force to respective gripping arms; (4) moving the element for radial orientation such that the axis of rotation of the stock rod at the end at which the groove is located corresponds to the axis of rotation of the pulling shaft; (5) setting the length-adjustable spacing elements such that the axis of rotation of the stock rod at the end remote from the groove corresponds to the axis of rotation of the pulling shaft; (6) pulling a conical part of a monocrystalline rod; (7) pulling a cylindrical part of the monocrystalline rod.

公开(公告)号：US10138573B2

公开(公告)日：2018-11-27

申请号：US14787236

申请日：2013-05-16

申请人： ZHEJIANG JINGSHENG M & E CO., LTD

发明人： Linjian Fu ,  Penggen Ouyang ,  Dantao Wang ,  Mingjie Chen ,  Gang Shi ,  Jianwei Cao ,  Minxiu Qiu ,  Qingliang Jiang

IPC分类号： C30B13/20 ,  C30B29/06 ,  C30B13/28 ,  C30B13/30 ,  C30B29/66

摘要： The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.

公开(公告)号：US09580832B2

公开(公告)日：2017-02-28

申请号：US14519159

申请日：2014-10-21

申请人： Siemens Medical Solutions USA, Inc.

发明人： Mark S. Andreaco ,  Troy Marlar ,  Brant Quinton

IPC分类号： C30B35/00 ,  C30B15/30 ,  C30B15/32 ,  C30B13/28 ,  C30B29/06

CPC分类号： C30B15/30 ,  C30B13/285 ,  C30B15/32 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A pulling head for a crystal growth furnace. The pulling head includes a servomotor and a rotatable housing attached to the servomotor, wherein the housing includes first, second, third and fourth housing magnets. The pulling head also includes a shaft attached to a scale and a connection device having first and second connection magnets. The first connection magnet is arranged between the first and second housing magnets to generate first and second magnetic repulsion forces and the second connection magnet is arranged between the third and fourth housing magnets to generate third and fourth magnetic repulsion forces. A rotation coupling is attached between the shaft and the connection device wherein the scale weighs the shaft, rotation coupling and the connection device. The servomotor rotates the housing and rotation of the housing is transmitted by the magnetic repulsion forces to the connection device to rotate the connection device.

摘要翻译： 用于晶体生长炉的拉头。 牵引头包括伺服电动机和连接到伺服电动机的可旋转壳体，其中壳体包括第一，第二，第三和第四壳体磁体。 牵引头还包括附接到秤的轴和具有第一和第二连接磁体的连接装置。 第一连接磁体布置在第一和第二壳体磁体之间以产生第一和第二磁性排斥力，并且第二连接磁体布置在第三和第四壳体磁体之间以产生第三和第四磁性排斥力。 旋转联轴器安装在轴和连接装置之间，其中秤称重轴，旋转联接器和连接装置。 伺服电动机旋转壳体并且壳体的旋转通过磁力排斥力传递到连接装置以旋转连接装置。

公开(公告)号：US20160377554A1

公开(公告)日：2016-12-29

申请号：US15189309

申请日：2016-06-22

申请人： SUMCO CORPORATION

发明人： Jun FUJISE ,  Toshiaki ONO

IPC分类号： G01N21/95 ,  H01L29/32 ,  H01L21/66 ,  G01N21/3563 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B33/02 ,  H01L29/16 ,  C30B13/28

CPC分类号： G01N21/9501 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  G01N21/3563 ,  G01N2021/3568 ,  G01N2021/3595 ,  G01N2201/12 ,  H01L21/3225 ,  H01L22/12

摘要： After determining the precipitated oxygen concentration and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained precipitated oxygen concentration and residual oxygen concentration; and the obtained critical shear stress and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.

摘要翻译： 在器件制造过程中进行热处理后，确定硅晶片中的沉淀氧浓度和残余氧浓度; 基于获得的沉淀氧浓度和残余氧浓度，确定在器件制造过程中在硅晶片中形成滑移位错的临界剪切应力τcri; 并且比较了在器件制造工艺的热处理中获得的临界剪切应力和施加到硅晶片的热应力τ，从而确定了当热应力τ为热应力τ时，在器件制造工艺中在硅晶片中形成滑移位错 等于或大于临界剪切应力τcri，或者当热应力τ小于临界剪切应力τcri时，确定在器件制造过程中在硅晶片中不形成滑移位错。

公开(公告)号：US09410263B2

公开(公告)日：2016-08-09

申请号：US13837047

申请日：2013-03-15

申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

发明人： Brian P. Smith ,  Christopher Cook

IPC分类号： C30B13/00 ,  C30B13/28

CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10T117/1076

摘要： The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.

摘要翻译： 根据本发明的装置是用于保持单晶硅种子的装置。 装置或保持器包含多个条以将晶种夹持在晶种保持器中; 以及支撑多个条的基座。 多个条带各自具有接触单晶硅晶种的自由端和与连接基底并与之成一体的自由端相反的端部。 多个条带被弯曲或折叠，使得当晶种插入多个条带中时，它们对晶种施加压力。

公开(公告)号：US09181631B2

公开(公告)日：2015-11-10

申请号：US12524737

申请日：2008-01-23

申请人： Shinji Togawa ,  Ryosuke Ueda

发明人： Shinji Togawa ,  Ryosuke Ueda

IPC分类号： C30B15/00 ,  C30B29/06 ,  C30B13/28 ,  C30B13/32 ,  C30B15/22

CPC分类号： C30B29/06 ,  C30B13/285 ,  C30B13/32 ,  C30B15/22

摘要： Provided is a silicon crystalline material, which is manufactured by a CZ method to be used as a material bar for manufacturing a silicon single crystal by an FZ method and has a grasping section for being loaded in a crystal growing furnace employing the FZ method without requiring mechanical processing. A method for manufacturing such silicon crystalline material is also provided. The silicon crystalline material is manufactured by the silicon crystal manufacturing method employing the CZ method and is provided with the grasping section, which is manufactured in a similar way as a shoulder portion, a straight body portion and a tail portion in a silicon crystal growing step employing the CZ method, and is loaded in a single crystal manufacturing apparatus employing the FZ method to grow single crystals. A seed-crystal used in the silicon crystal manufacture employing the CZ method is used as the grasping section. The grasping section is manufactured by temporarily changing crystal growing conditions to form a protruding section or a recessed section on the outer circumference surface of the straight body section or by forming a dent on the shoulder portion of the straight body portion, at the time of manufacturing the silicon crystal by the CZ method.

摘要翻译： 提供了一种硅晶体材料，其通过CZ法制造，用作通过FZ法制造单晶硅材料棒，并且具有用FZ方法装载在晶体生长炉中的把持部分，而不需要 机械加工。 还提供了制造这种硅晶体材料的方法。 硅晶体材料通过使用CZ法的硅晶体制造方法制造，并且在硅晶体生长步骤中设置有与肩部相同的方式制造的把持部，直体部和尾部 采用CZ法，并装载在采用FZ法的单晶制造装置中生长单晶。 使用采用CZ法的硅晶体制造中使用的晶种被用作抓取部分。 通过临时改变晶体生长条件来制造把持部分，以在直体部分的外圆周表面上形成突出部分或凹部，或者在制造时在直体部分的肩部上形成凹痕 硅晶体采用CZ法。

公开(公告)号：US08728238B2

公开(公告)日：2014-05-20

申请号：US13957074

申请日：2013-08-01

申请人： Pengdi Han ,  Jian Tian

发明人： Pengdi Han ,  Jian Tian

IPC分类号： C30B35/00 ,  C30B13/28 ,  C30B15/30 ,  C30B11/00 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC分类号： C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

摘要翻译： 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。

公开(公告)号：US08535442B2

公开(公告)日：2013-09-17

申请号：US12373080

申请日：2007-07-12

申请人： Pengdi Han ,  Jian Tian

发明人： Pengdi Han ,  Jian Tian

IPC分类号： C30B35/00 ,  C30B13/28 ,  C30B11/00 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC分类号： C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

摘要翻译： 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。