Abstract:
A power harvesting circuit for use in an open drain transmitter circuit is configured to generate two distinct harvested supply voltages at different voltage levels along with two distinct cascode voltages at different voltage levels. The harvested supply voltages are used to power circuitry in the transmitter circuit. The cascode voltages are used to bias cascode transistors in the open drain circuitry for different channels.
Abstract:
A device includes a matrix of active pixels. Each active pixel includes an OLED and a control circuit configured to refresh the active pixel and including at least one transistor having a first conduction terminal coupled to a supply line and a second conduction terminal coupled to the OLED. Supply circuitry is configured to apply a supply voltage to the supply line of each active pixel during the refreshing of the active pixel and for a time period less than a duration of the refreshing of the active pixel.
Abstract:
A NFC tag includes an NFC controller, with a secure element coupled to the NFC controller. The secure element is to send first configuration data to the NFC controller and not second configuration data. The first configuration data comprises data to be used by the NFC controller to generate responses to initial polling and anti-collision commands from an external NFC device and not data to be used by the NFC controller in processing a command from the external NFC device involving the use of an upper layer protocol. The second configuration data comprises data to be used by the NFC controller in processing a command involving the use of an upper layer protocol from the external NFC device.
Abstract:
A memory device includes an array of phase-change memory (PCM) cells and complementary PCM cells. A column decoder is coupled to the array of PCM cells and complementary PCM cells, and a sense amplifier is coupled to the column decoder. The sense amplifier includes a current integrator configured to receive first and second currents of a given PCM cell and complementary PCM cell, respectively. A current-to-voltage converter is coupled to the current integrator and is configured to receive the first and second currents, and to provide first and second voltages of the given PCM cell and complementary PCM cell to first and second nodes, respectively. A logic circuit is coupled to the first and second nodes and is configured to disable the column decoder and to discharge the bitline and complementary bitline voltages in response to the first and second voltages.
Abstract:
According to an embodiment described herein, a method for testing a memory includes receiving an address and a start signal at a memory, and generating a first detector pulse at a test circuit in response to the start signal. The first detector pulse has a leading edge and a trailing edge. A data transition of a bit associated with the address is detected. The bit is a functional bit. The method further includes determining whether the bit is a weak bit by determining whether the data transition occurred after the trailing edge.
Abstract:
A method for operating an augmented reality system includes acquiring video data from a camera sensor or video file, and identifying at least one region of interest within the video data. Augmented reality data is generated for the region of interest without receiving user input, with the augmented reality data being contextually related to the region of interest. The video data may be displayed with the augmented reality data superimposed thereupon in real time as the video data is acquired from the camera sensor or video file. The video data and the augmented reality data are stored in a non-conflated fashion. The video data may be displayed with updated AR content acquired for stored AR metadata during later playback. The method therefore allows the storage of AR ROI's and data from any suitable sensor as metadata, so that later retrieval is possible in the absence of additional processing.
Abstract:
An integrated device includes a semiconducting substrate having a matrix of active pixels formed therein. Each active pixel includes an OLED diode, a first nMOS transistor having its source coupled to an anode of the OLED diode, and a refresh circuit coupled to a gate of the first nMOS transistor. The first nMOS transistor has its source and its substrate coupled together. The first nMOS transistor is situated in and on a first part of the semiconductor substrate, and the refresh circuit is situated in and on a second part of the semiconductor substrate, with the first part and the second part being electrically insulated from one another.
Abstract:
A GOP-independent dynamic bit-rate controller system includes a user interface to receive one or more input parameters, a bit-rate controller and an encoder. The bit-rate controller regulates a bit-rate of an output bit-stream. The bit-rate controller includes multiple bit-rate modules to determine a bit-estimate and a quantization parameter, and a control module to calculate a convergence period based on the received input parameters and a frame rate. The control module selects a bit rate module based on the convergence period and the encoder generates the output bit-stream using the quantization parameter determined by the bit rate module.
Abstract:
A semiconductor chip includes an OCC that receives an ATPG test pattern and generates clock pulses in response. An OCC test circuit detects clock pulses of the OCC circuit and provides debug data to test output configurable logic that also receives results from other circuits testing different DUT flip-flops. A clipping test circuit detects ATPG failures due to clipped clock pulses from the OCC by providing pulse-width sensitive flip-flop outputs to DUT I/Os. An IR drop test circuit detects if ATPG failures are due to IR-drop problems in certain flip-flops. A pulse bit manipulating circuit varies the test pattern provided to the OCC and OCC-generated clock pulses. A debug controller connected to test output configurable logic selects between results of the different tests for supply as an output test signal to be compared on-the-fly with expected pattern data on ATE and used to isolate errors on the chip.
Abstract translation:半导体芯片包括接收ATPG测试图案并产生响应的时钟脉冲的OCC。 OCC测试电路检测OCC电路的时钟脉冲,并提供调试数据以测试输出可配置逻辑,其也接收来自测试不同DUT触发器的其他电路的结果。 削波测试电路通过向DUT I / O提供脉冲宽度敏感的触发器输出来检测来自OCC的剪辑时钟脉冲的ATPG故障。 IR跌落测试电路检测ATPG故障是否由于某些触发器中的IR降低问题。 脉冲位操作电路改变提供给OCC和OCC产生的时钟脉冲的测试模式。 连接到测试输出可配置逻辑的调试控制器在不同测试结果之间选择供应作为输出测试信号,与ATE上的预期模式数据进行比较,并用于隔离芯片上的错误。
Abstract:
A drive circuit includes a first drive transistor coupled between a first supply node and an output pad of an integrated circuit and a second drive transistor coupled between a second supply node and the output pad. The first drive transistor and second drive transistors are controlled by a control signal. A body bias generator circuit is configured to apply a variable first body bias to the first transistor and a variable second body bias to the second transistor. The variable first and second body biases are generated as a function of the control signal and a voltage at the output pad.