Logical interleaver
    61.
    发明授权

    公开(公告)号:US10122384B2

    公开(公告)日:2018-11-06

    申请号:US15157814

    申请日:2016-05-18

    申请人: ARM Limited

    IPC分类号: G11C29/00 H03M13/29 H03M13/27

    摘要: Various implementations described herein are directed to a memory device. The memory device includes a first interleaving circuit that receives data words and generates a first error correction code based on the received data words. The memory device includes a second interleaving circuit that receives the data words and generates a second error correction code based on the received data words as a complement to the first error correction code. The second interleaving circuit interleaves data bits from multiple different data words and stores modified data words based on the multiple different data words.

    Integration fill technique
    62.
    发明授权

    公开(公告)号:US10083833B1

    公开(公告)日:2018-09-25

    申请号:US15629684

    申请日:2017-06-21

    申请人: ARM Limited

    IPC分类号: H01L21/033

    摘要: Various implementations described herein are directed to a method for manufacturing an integrated circuit. The method may include defining multiple lithographic regions for the integrated circuit, and the multiple lithographic regions may include a first lithographic region and a second lithographic region. The method may include defining an anchor in the first lithographic region and defining a target in the second lithographic region. The method may include defining a spacing interval between the anchor and the target. The method may include inserting an integration fill in the spacing interval.

    System and method for providing a continuous wellbore survey

    公开(公告)号:US10077648B2

    公开(公告)日:2018-09-18

    申请号:US14446140

    申请日:2014-07-29

    摘要: Systems and methods are provided for producing a continuous survey of a previously drilled portion of a wellbore. The method includes receiving a plurality of stationary survey measurements taken at a corresponding plurality of locations along the portion of the wellbore. The method further includes receiving at least one continuous survey including a plurality of continuous survey measurements taken between a pair of stationary survey measurements of the plurality of stationary survey measurements. The method further includes combining the plurality of stationary survey measurements and the plurality of continuous survey measurements to produce the continuous survey of the portion of the wellbore.

    System and method for a laundry wash bag

    公开(公告)号:US09970151B2

    公开(公告)日:2018-05-15

    申请号:US15073446

    申请日:2016-03-17

    申请人: Serviam U, LLC

    CPC分类号: D06F95/006 D06F35/005

    摘要: A system and method for a laundry wash bag can comprise an lattice walls, a solid wall portion and a plurality of nodules. The lattice walls can form a plurality of polygonal perforations. The lattice walls can be capable of containing one or more garments. The solid wall portion can attach on a portion of the lattice walls. The solid wall portion can comprise a fastener that is capable of opening and closing the lattice walls to allow receiving of the one or more garments. The plurality of nodules can be placed within the inner surface of the lattice walls. The plurality of nodules can be capable of rubbing with the one or more garments. The plurality of nodules can be capable of reduce wrinkles during the drying cycle.

    Redundancy schemes for memory cell repair

    公开(公告)号:US09911510B1

    公开(公告)日:2018-03-06

    申请号:US15288832

    申请日:2016-10-07

    申请人: ARM Limited

    摘要: Various implementations described herein are directed to an integrated circuit having a memory cell array with multiple rows of memory cells including at least one redundant row of memory cells. The memory cell array may be partitioned into multiple regions of memory cells including a first region of memory cells corresponding to a first part of the redundant row of memory cells and a second region of memory cells corresponding to a second part of the redundant row of memory cells. The integrated circuit may include wordline driver circuitry coupled to the first and second regions of memory cells and their corresponding first and second parts of the redundant row of memory cells. In some instances, the integrated circuit may include row shift circuitry coupled to the first and second regions of memory cells and their corresponding first and second parts of the redundant row of memory cells.

    Electrostatic discharge protection circuitry

    公开(公告)号:US09893517B2

    公开(公告)日:2018-02-13

    申请号:US14570142

    申请日:2014-12-15

    申请人: ARM Limited

    摘要: Various implementations described herein are directed to an integrated circuit for electrostatic discharge (ESD) protection. The integrated circuit may include a detection stage having a resistor and a first capacitor cascaded with a second capacitor. The resistor and the first capacitor are arranged to define a triggering node configured to provide a triggering signal. The first capacitor and the second capacitor are arranged to define a reference node configured to provide a reference signal. The integrated circuit may include a first ESD clamping stage having a first transistor configured to provide a supply voltage to a first clamping transistor based on the triggering signal. The integrated circuit may include a second ESD clamping stage having a second transistor configured to receive the supply voltage from the first transistor and provide the supply voltage to a second clamping transistor based on the reference signal.