公开(公告)号：US07524706B2

公开(公告)日：2009-04-28

申请号：US11844597

申请日：2007-08-24

申请人： Je Hun Lee ,  Yang Ho Bae ,  Beom Seok Cho ,  Chang Oh Jeong

发明人： Je Hun Lee ,  Yang Ho Bae ,  Beom Seok Cho ,  Chang Oh Jeong

IPC分类号： H01L21/00

CPC分类号： H01L29/458 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.

摘要翻译： 薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极，Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。 可以在Mo合金层和Cu层之间，Mo合金层和半导体层之间或Mo合金层中形成氮化物层。 制造薄膜晶体管阵列面板的方法包括：形成具有第一导电层和第二导电层的数据线，所述第一导电层含有Mo合金，所述第二导电层含有Cu，并进行氮处理，使得 第一导电层中的合金元素形成氮化物层。 在形成第一导电层之前，在形成第一导电层之后，或者在形成第一导电层期间，可以进行氮处理。

公开(公告)号：US20080138942A1

公开(公告)日：2008-06-12

申请号：US12031121

申请日：2008-02-14

申请人： Je-Hun LEE ,  Yang-Ho BAE ,  Beom-Seok CHO ,  Chang-Oh JEONG

发明人： Je-Hun LEE ,  Yang-Ho BAE ,  Beom-Seok CHO ,  Chang-Oh JEONG

IPC分类号： H01L21/336

CPC分类号： H01L27/3279 ,  H01L27/124 ,  H01L27/1288 ,  H01L51/0023 ,  H01L51/56

摘要： The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.

摘要翻译： 本发明提供一种薄膜晶体管（TFT）阵列面板，其包括绝缘基板; 形成在所述绝缘基板上并具有含有Al的金属的第一层，比所述第一层更厚的含Cu金属的第二层的栅极线和栅电极; 栅极绝缘层，布置在栅极线上; 布置在栅绝缘层上的半导体; 数据线，其具有源电极并且布置在所述栅极绝缘层和所述半导体上; 布置在所述栅绝缘层和所述半导体上并面对所述源电极的漏电极; 钝化层，其具有接触孔并且布置在所述数据线和所述漏电极上; 以及设置在钝化层上并通过接触孔与漏电极耦合的像素电极。

公开(公告)号：US07304383B2

公开(公告)日：2007-12-04

申请号：US10535304

申请日：2003-10-27

申请人： Beom-Seok Cho ,  Chang-Oh Jeong

发明人： Beom-Seok Cho ,  Chang-Oh Jeong

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/4908 ,  C22C9/00 ,  G02F1/133345 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.

摘要翻译： 提供了一种用于LCD装置的TFT基板及其制造方法。 连续地在TFT基板上形成基板（10），扩散阻挡层（11）和铜合金层（12）。 铜合金包括约0.5at％至约15at％的材料以形成栅极布线层。 该材料用于形成扩散阻挡层（11）。 包含诸如Zr，Ti，Hf，V，Ta，Ni，Cr，Nb，Co，Mn，Mo，W，Rh，Pd，Pt等材料的化合物沉积在扩散阻挡层（11）上， 至约50至约5000的厚度。 然后将沉积的化合物进行热处理以将沉积的化合物转化为硅化物（11b）。 晶体管衬底具有低电阻和高电导率。 此外，简化了蚀刻工艺，并且通过薄的扩散阻挡层来防止相互扩散。

公开(公告)号：US20070082434A1

公开(公告)日：2007-04-12

申请号：US11540131

申请日：2006-09-29

申请人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Beom-Seok Cho

发明人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Beom-Seok Cho

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： The present invention relates to a manufacturing method of a thin film transistor array panel. the method includes forming a gate line including a gate electrode on a substrate, forming a first insulating layer on the gate line, forming a semiconductor layer on the first insulating layer, forming an ohmic contact on the semiconductor layer, forming a data line including a source electrode and a drain electrode on the ohmic contact, depositing a second insulating layer, forming a first photoresist on the second insulating layer, etching the second insulating layer and the first insulating layer using the first photoresist as an etching mask to expose a portion of the drain electrode and a portion of the substrate, forming a pixel electrode connected to an exposed portion of the drain electrode using selective deposition, and removing the first photoresist.

摘要翻译： 本发明涉及薄膜晶体管阵列面板的制造方法。 该方法包括在基板上形成包括栅电极的栅极线，在栅极线上形成第一绝缘层，在第一绝缘层上形成半导体层，在半导体层上形成欧姆接触，形成数据线， 源电极和漏电极，沉积第二绝缘层，在第二绝缘层上形成第一光致抗蚀剂，使用第一光致抗蚀剂蚀刻第二绝缘层和第一绝缘层作为蚀刻掩模，以暴露部分 所述漏电极和所述衬底的一部分，使用选择性沉积形成连接到所述漏极的暴露部分的像素电极，以及去除所述第一光致抗蚀剂。

公开(公告)号：US20060175706A1

公开(公告)日：2006-08-10

申请号：US11316242

申请日：2005-12-21

申请人： Je-hun Lee ,  Chang-oh Jeong ,  Jin-kwan Kim ,  Yang-ho Bae ,  Beom-seok Cho ,  Jun-hyung Souk

发明人： Je-hun Lee ,  Chang-oh Jeong ,  Jin-kwan Kim ,  Yang-ho Bae ,  Beom-seok Cho ,  Jun-hyung Souk

IPC分类号： H01L23/48

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/4908 ,  H01L51/0021

摘要： Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer. Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.

摘要翻译： 公开了诸如包括铝层的TFT阵列面板和形成在铝层上的钼层的显示部分。 钼层的厚度可以为铝层的厚度的约10％至约40％。 结果，铝层的顶表面可以具有大约等于钼层的底表面的宽度。 因此，本发明的一个方面是提供一种TFT阵列面板，其包括在其上减少或消除铝突起的铝布线。

公开(公告)号：US20060163582A1

公开(公告)日：2006-07-27

申请号：US10539223

申请日：2003-03-26

申请人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

发明人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

IPC分类号： H01L29/76

CPC分类号： H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

摘要翻译： 薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线方法。 由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

公开(公告)号：US20060151788A1

公开(公告)日：2006-07-13

申请号：US10535304

申请日：2003-10-27

申请人： Beom-Seok Cho ,  Chang-Oh Jeong

发明人： Beom-Seok Cho ,  Chang-Oh Jeong

IPC分类号： H01L29/04

CPC分类号： H01L29/4908 ,  C22C9/00 ,  G02F1/133345 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.

摘要翻译： 提供了一种用于LCD装置的TFT基板及其制造方法。 连续地在TFT基板上形成基板（10），扩散阻挡层（11）和铜合金层（12）。 铜合金包括约0.5at％至约15at％的材料以形成栅极布线层。 该材料用于形成扩散阻挡层（11）。 包含诸如Zr，Ti，Hf，V，Ta，Ni，Cr，Nb，Co，Mn，Mo，W，Rh，Pd，Pt等材料的化合物沉积在扩散阻挡层（11）上， 至约50至约5000的厚度。 然后将沉积的化合物进行热处理以将沉积的化合物转化为硅化物（11b）。 晶体管衬底具有低电阻和高电导率。 此外，简化了蚀刻工艺，并且通过薄的扩散阻挡层来防止相互扩散。

公开(公告)号：US20050242401A1

公开(公告)日：2005-11-03

申请号：US11170251

申请日：2005-06-29

申请人： Beom-Seok Cho ,  Chang-Oh Jeong

发明人： Beom-Seok Cho ,  Chang-Oh Jeong

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786 ,  H01L51/50 ,  H05B33/12 ,  H01L29/76

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  G02F2001/13629

摘要： A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire include triple layers of an adhesion layer, a Ag containing layer and a protection layer. The adhesion layer includes one of Cr, Cr alloy, Ti, Ti alloy, Mo, Mo alloy, Ta and Ta alloy, the Ag containing layer includes Ag or Ag alloy, and the protection layer includes one of IZO, Mo, Mo alloy, Cr and Cr alloy.

摘要翻译： 薄膜晶体管阵列面板包括绝缘基板，形成在绝缘基板上的栅极线。 栅极绝缘层覆盖栅极线。 在栅极绝缘层上形成半导体图形。 在栅极绝缘层和半导体图案上形成具有源电极，漏电极和数据线的数据线。 在数据线上形成保护层。 在保护层上形成通过接触孔与漏电极连接的像素电极。 栅极线和数据线包括粘合层，含Ag层和保护层的三层。 粘合层包括Cr，Cr合金，Ti，Ti合金，Mo，Mo合金，Ta和Ta合金中的一种，含Ag层包括Ag或Ag合金，保护层包括IZO，Mo，Mo合金， Cr和Cr合金。

公开(公告)号：US06716660B2

公开(公告)日：2004-04-06

申请号：US10247727

申请日：2002-09-20

申请人： Chang-Oh Jeong ,  Jae-Gab Lee ,  Beom-Seok Cho

发明人： Chang-Oh Jeong ,  Jae-Gab Lee ,  Beom-Seok Cho

IPC分类号： H01L2100

CPC分类号： H01L27/124 ,  G02F1/136286 ,  H01L23/53242 ,  H01L23/53247 ,  H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one aspect of the present invention, the thin film transistor array substrate basically includes a gate line assembly based on an Ag alloy. The Ag alloy comprises Ag and at least one of alloy elements and the alloy elements each bearing a low melting point. The gate line assembly comprises a gate electrode and a gate line. A data line assembly crosses over the gate line assembly while being insulated from the gate line assembly. The data line assembly comprises a source electrode, a drain electrode and a data line. A semiconductor layer contacts the source electrode and the drain electrode. The semiconductor layer forms a thin film transistor together with the gate electrode, the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode.

摘要翻译： 根据本发明的一个方面，薄膜晶体管阵列基板基本上包括基于Ag合金的栅极线组件。 Ag合金包含Ag和至少一种合金元素和各自具有低熔点的合金元素。 栅极线组件包括栅电极和栅极线。 数据线组件在与栅极线组件绝缘的同时跨过栅极线组件。 数据线组件包括源电极，漏电极和数据线。 半导体层接触源电极和漏电极。 半导体层与栅电极，源电极和漏电极一起形成薄膜晶体管。 像素电极连接到漏电极。

公开(公告)号：US08572656B2

公开(公告)日：2013-10-29

申请号：US12269797

申请日：2008-11-12

申请人： Beom Seok Cho ,  Ki Hoa Nam

发明人： Beom Seok Cho ,  Ki Hoa Nam

IPC分类号： H04N5/445 ,  H04N7/16

CPC分类号： H04H60/33 ,  H04N21/4126 ,  H04N21/4758 ,  H04N21/8545

摘要： A mobile terminal and a method for controlling a broadcast displays information on an interactive service associated with a broadcast program, the information provided prior to displaying the associated broadcast program. The present invention includes a wireless communication unit receiving interactive service information, an input unit selecting an interactive service using the received interactive service information, and a controller scheduling the execution of the selected interactive service.

摘要翻译： 用于控制广播的移动终端和方法显示关于与广播节目相关联的交互式服务的信息，所述信息在显示相关联的广播节目之前提供。 本发明包括接收交互式服务信息的无线通信单元，使用接收到的交互式服务信息选择交互式服务的输入单元，以及调度所选择的交互式服务的执行的控制器。