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    MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY
    62.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY 有权
    磁性器件和磁性存储器

    公开(公告)号：US20130028011A1

    公开(公告)日：2013-01-31

    申请号：US13424769

    申请日：2012-03-20

    Applicant: Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Hiroaki Yoda ,  Junichi ITO ,  Minoru AMANO ,  Chikayoshi KAMATA ,  Keiko ABE

    Inventor： Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Hiroaki Yoda ,  Junichi ITO ,  Minoru AMANO ,  Chikayoshi KAMATA ,  Keiko ABE

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

    Abstract: A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.

    Abstract translation: 实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层 磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件 布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

    MASTER FOR PRODUCING STAMPER
    63.
    发明申请
    MASTER FOR PRODUCING STAMPER 有权
    主要生产冲压器

    公开(公告)号：US20130004724A1

    公开(公告)日：2013-01-03

    申请号：US13613667

    申请日：2012-09-13

    Applicant: Saori Kashiwada ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Yoshiyuki Kamata

    Inventor： Saori Kashiwada ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Yoshiyuki Kamata

    IPC: B32B3/30 ,  B32B9/04 ,  B32B17/06

    CPC classification number: G11B7/261 ,  G11B7/263 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612

    Abstract: In one embodiment, there is provided a master for producing a stamper. The master includes: a substrate made of a first material and comprising a first surface, wherein the first surface of the substrate is formed with a groove; a first layer made of a second material and formed in the groove, wherein the second material is different from the first material, and wherein a surface of the first layer is substantially flush with the first surface of substrate; and a projection portion formed on at least one of the first surface of the substrate and the surface of the first layer. The first material is silicon and the second material is selected from silicon oxide, aluminum oxide, titanium oxide, and glass.

    Abstract translation: 在一个实施例中，提供了一种用于制造压模的主机。 主机包括：由第一材料制成并包括第一表面的基板，其中基板的第一表面形成有凹槽; 由第二材料制成并形成在所述凹槽中的第一层，其中所述第二材料与所述第一材料不同，并且其中所述第一层的表面基本上与所述基板的第一表面齐平; 以及形成在所述基板的第一表面和所述第一层的表面中的至少一个上的突出部。 第一种材料是硅，第二种材料选自氧化硅，氧化铝，氧化钛和玻璃。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    64.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20120241827A1

    公开(公告)日：2012-09-27

    申请号：US13210678

    申请日：2011-08-16

    Applicant: Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    Inventor： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    INFORMATION RECORDING/REPRODUCING DEVICE
    66.
    发明申请
    INFORMATION RECORDING/REPRODUCING DEVICE 有权
    信息记录/再现设备

    公开(公告)号：US20110216576A1

    公开(公告)日：2011-09-08

    申请号：US13044384

    申请日：2011-03-09

    Applicant: Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    Inventor： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    IPC: G11C11/00 ,  H01L45/00

    CPC classification number: H01L45/1233 ,  G11B9/04 ,  G11C13/0011 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/146

    Abstract: According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

    Abstract translation: 根据一个实施例，信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构，并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化，以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构，第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

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