公开(公告)号：US07756176B2

公开(公告)日：2010-07-13

申请号：US11952408

申请日：2007-12-07

Applicant: Gyungock Kim ,  In Gyoo Kim ,  Junghyung Pyo ,  Ki Seok Chang

Inventor： Gyungock Kim ,  In Gyoo Kim ,  Junghyung Pyo ,  Ki Seok Chang

IPC: H01S5/00

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

Abstract translation: 公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。 因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

公开(公告)号：US20100130010A1

公开(公告)日：2010-05-27

申请号：US12538080

申请日：2009-08-07

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: H01L21/308 ,  G01B11/27

CPC classification number: H01L21/0338 ,  G01B11/27 ,  G03F9/7069 ,  G03F9/7088 ,  H01L21/0337

Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

公开(公告)号：US20100060369A1

公开(公告)日：2010-03-11

申请号：US12516105

申请日：2007-10-31

Applicant: Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

Inventor： Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

IPC: H03B7/14

CPC classification number: H01L49/003 ,  H01L29/94 ,  H03B17/00

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract translation: 提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。 振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器， 限制施加电流的最大量并向MIT装置施加直流恒定电压的电动电源以及在MIT装置上照射电磁波的光源，其中振荡特性是通过使用 光源。

公开(公告)号：US20090207472A1

公开(公告)日：2009-08-20

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/786

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

公开(公告)号：US08948224B2

公开(公告)日：2015-02-03

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L21/00

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

公开(公告)号：US20130156057A1

公开(公告)日：2013-06-20

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  JiHo JOO ,  Ki Seok JANG

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  JiHo JOO ,  Ki Seok JANG

IPC: H01S5/028 ,  H01L33/58

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

公开(公告)号：US20120263411A1

公开(公告)日：2012-10-18

申请号：US13443843

申请日：2012-04-10

Applicant: Do Won KIM ,  Gyungock Kim

Inventor： Do Won KIM ,  Gyungock Kim

IPC: G02B6/12 ,  G02B6/36

CPC classification number: G02B6/3897 ,  G02B6/423 ,  G02B6/4249 ,  G02B6/4292 ,  G02B2006/12107

Abstract: Provided are an optical connector capable of improving optical alignment efficiency and an optical device having the same. The connector may include a body having a top surface and a bottom surface facing each other, through holes penetrating the body to connect the top and bottom surfaces, and alignment keys provided on at least side surface of the body to be parallel to the through holes.

Abstract translation: 提供能够提高光取向效率的光连接器和具有该光连接器的光学装置。 连接器可以包括具有顶表面和底表面彼此面对的主体，穿过穿过主体以连接顶表面和底表面的孔以及设置在主体的至少侧表面上以与通孔平行的对准键 。

公开(公告)号：US20120156369A1

公开(公告)日：2012-06-21

申请号：US13289743

申请日：2011-11-04

Applicant: In Gyoo KIM ,  Sang Hoon KIM ,  Gyungock KIM

Inventor： In Gyoo KIM ,  Sang Hoon KIM ,  Gyungock KIM

IPC: G02B6/26

CPC classification number: G02B6/1228 ,  G02B6/12002 ,  G02B6/305

Abstract: Provided are methods of forming an optical coupler. The method includes forming a first waveguide and an in-plane tapered layer on a silicon layer, forming a mask with first and second openings. The first opening is formed between the in-plane tapered layer and the second opening, and the second opening extends from the first opening with a gradually narrowing width. Thereafter, a planar waveguide and a three-dimensional tapered layer are simultaneously formed in the first and second openings, respectively. The planar waveguide has a substantially uniform thickness, and the three-dimensional tapered layer has a thickness gradually increasing with a decrease of the width thereof.

Abstract translation: 提供了形成光耦合器的方法。 该方法包括在硅层上形成第一波导和面内锥形层，形成具有第一和第二开口的掩模。 第一开口形成在平面内锥形层和第二开口之间，第二开口从第一开口以逐渐变窄的宽度延伸。 此后，分别在第一和第二开口中同时形成平面波导和三维锥形层。 平面波导具有大致均匀的厚度，并且三维锥形层的厚度随着其宽度的减小而逐渐增加。

公开(公告)号：US20110243507A1

公开(公告)日：2011-10-06

申请号：US12886848

申请日：2010-09-21

Applicant: Do Won KIM ,  Gyungock Kim ,  Duk Jun Kim

Inventor： Do Won KIM ,  Gyungock Kim ,  Duk Jun Kim

IPC: G02B6/36

CPC classification number: G02B6/30 ,  G02B6/34 ,  G02B6/3885 ,  G02B2006/12107

Abstract: Provided are an optical connector and an optical apparatus having the same. The optical connector comprises a substrate, at least one optical waveguide, an optical coupler, and a ferrule alignment unit. The at least one optical waveguide is formed on the substrate. The optical coupler is formed on the optical waveguide. The ferrule alignment unit allows a ferrule fixing optical fibers combined with the optical coupler to be aligned with the substrate.

Abstract translation: 提供一种光连接器和具有该连接器的光学装置。 光学连接器包括基板，至少一个光波导，光耦合器和套圈对准单元。 所述至少一个光波导形成在所述基板上。 光耦合器形成在光波导上。 套圈对准单元允许与光耦合器组合的套圈固定光纤与衬底对准。

公开(公告)号：US07994549B2

公开(公告)日：2011-08-09

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: H01L29/76

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅极绝缘层，其具有形状并且形成在所述第一半导体层的一部分上并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。