Abstract:
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
Abstract:
A temperature distribution measuring device has a turnable sensor head section 1 in which a plurality of detecting sections are arranged, a shaft 2 to which the sensor head section 1 is mounted so that the array direction of the detecting sections is inclined to the axis of rotation thereof, a rotation driving motor for rotating the shaft 2, control circuit 8 for controlling the direction and speed of rotation of the rotation driving section 3, and an umbrella-shaped chopping member for intermittently blocking incident infrared beams. The device has high spatial resolution and can offer temperature resolution at low cost.
Abstract:
A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
Abstract translation:一种半导体器件,包括:(a)在其表面上形成集成电路的半导体衬底,(b)形成在半导体器件上并具有通向集成电路的第一接触孔的第一绝缘层,(c)电容元件 形成在所述第一绝缘层上,(d)形成在所述第一绝缘层上以覆盖所述电容元件的第二绝缘层,以及具有分别通向所述电容元件的上下电极的第二接触孔,以及(e) 互连通过第一和第二接触孔分别连接到集成电路和电容元件。 该半导体器件的氢密度为1011原子/ cm 2以下。
Abstract:
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
Abstract translation:一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件,其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层,其在一个方面覆盖电容器,并且具有氢含量为1021原子/ cm3以下的钝化层,其覆盖电容器的互连 在其他方面。 通过这样构成,可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。
Abstract:
A temperature distribution measurement apparatus has an infrared array sensor that comprises a pyroelectric substrate with infrared ray detecting electrodes, a focusing member comprising an infrared lens for focusing incident infrared rays on the infrared array sensor, a cylindrical chopping member for intermittently shielding incident infrared rays from the plurality of detector elements and a driving member for continuously rotating a rotating member which includes the infrared array sensor. The temperature distribution measurement apparatus combined with computational means and detector means is applied to determine number, position, and movements of persons in a space.
Abstract:
An air conditioner or heat pump containing a working fluid comprising tetrafluoroethane and at least two fluorinated hydrocarbons having a boiling point of not higher than -40.degree. C. under atmospheric pressure selected from the group consisting of methane derivatives and ethane derivatives which consist of one or two carbon atoms, hydrogen atoms and fluorine atoms, which has very small influence on the ozone layer in the stratosphere and is suitable as a substitute working fluid for chlorodifluoromethane.
Abstract:
An environmental control system comprises room temperature measurement apparatus, a plurality of thermal sensors fixed on a mattress over abed, a plurality of humidity sensors fixed on the mattress over the bed, an air conditioning unit for varying the room temperature, and a control circuit. The control circuit determines a thermal sensation of a sleeper from measured values by a plurality of thermal sensors , determines a perspiratory sensation of the sleeper from the measured values by a plurality of humidity sensors, and controls the air conditioning unit so as to let the temperature of the air in the vicinity of the bed be different from the room temperature by an amount prescribed by the combination of the room temperature value and the thermal and perspiratory sensation values, thus maintaining a comfortable condition in the bedroom and on the mattress.
Abstract:
A portable cooler for cooling an article by utilizing the endothermic and exothermic phenomenon pertaining to a chemical reaction is disclosed, in which an adsorbent and a working medium are sealed in a reaction chamber defined between an inner wall and an outer wall, a working medium retaining member is disposed on the inner wall inside the reaction chamber for holding therein the working medium, the working medium retaining member being spaced from the adsorbent disposed on the outer wall, and a heater is held in contact with the adsorbent for regenerating the same, at least a part of said outer wall constituting a heat radiating portion.
Abstract:
A nonvolatile semiconductor memory device (100) comprises a substrate (102) provided with a transistor (101); a first interlayer insulating layer (103) formed over the substrate to cover the transistor; a first contact plug (104) formed in the first interlayer insulating layer and electrically connected to either of a drain electrode (101a) or a source electrode (101b) of the transistor, and a second contact plug (105) formed in the first interlayer insulating layer and electrically connected to the other of the drain electrode or the source electrode of the transistor; a resistance variable layer (106) formed to cover a portion of the first contact plug; a first wire (107) formed on the resistance variable layer; and a second wire (108) formed to cover a portion of the second contact plug; an end surface of the resistance variable layer being coplanar with an end surface of the first wire.
Abstract:
A current steering element (100) formed such that the current steering element covers a lower opening (105) of a via hole (104) formed in an interlayer insulating layer (102), comprises: a corrosion-suppressing layer (106) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer (108) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer (110) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer (112) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.