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148 条记录 (耗时 0.026 秒)

    Color filter array, image sensor having the same, and signal interpolating method
    64.
    发明授权
    Color filter array, image sensor having the same, and signal interpolating method 有权
    滤色器阵列，具有相同的图像传感器和信号内插方法

    公开(公告)号：US08599291B2

    公开(公告)日：2013-12-03

    申请号：US12893445

    申请日：2010-09-29

    申请人： Dong Ki Min ,  Young Gu Jin

    发明人： Dong Ki Min ,  Young Gu Jin

    IPC分类号： H04N5/335

    CPC分类号： H04N9/045 ,  H04N5/332 ,  H04N2209/046

    摘要： A color filter array of an image sensor, the color filter array including a plurality of infrared ray (IR) filters, each of which filters out light to transmit wavelengths in an IR region; a plurality of first type color filters; a plurality of second type color filters; and a plurality of third type color filters, wherein some adjacent IR filters are arranged to form a T shape.

    摘要翻译： 一种图像传感器的滤色器阵列，所述滤色器阵列包括多个红外线（IR）滤波器，每个滤色器滤出光以在IR区域中发射波长; 多个第一类型滤色器; 多个第二类型滤色器; 以及多个第三类型滤色器，其中一些相邻的IR滤光器被布置成形成T形。

    Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device
    65.
    发明授权
    Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
    制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置

    公开(公告)号：US08354286B2

    公开(公告)日：2013-01-15

    申请号：US10758136

    申请日：2004-01-16

    申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    IPC分类号： H01L21/00

    CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

    摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

    Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
    66.
    发明授权
    Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same 有权
    近红外光电探测器，采用其的图像传感器及其制造方法

    公开(公告)号：US08193497B2

    公开(公告)日：2012-06-05

    申请号：US12656684

    申请日：2010-02-12

    申请人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

    发明人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

    IPC分类号： H01L27/148

    CPC分类号： H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

    摘要： Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

    摘要翻译： 使用近红外偶极天线的硅光电探测器。 光电探测器包括形成在半导体衬底上的硅区，形成两个臂的偶极天线，两个臂与它们之间的硅区间隔开，并引起入射光的电磁波信号，以及设置在偶极子天线的垂直方向上并间隔开的电极 其间的硅区域，其中向电极施加临界偏置电压以在硅区域中引起雪崩增益操作。

    IMAGE SENSOR FOR SIMULTANEOUSLY OBTAINING COLOR IMAGE AND DEPTH IMAGE, METHOD OF OPERATING THE IMAGE SENSOR, AND IMAGE PROCESSING SYTEM INCLUDING THE IMAGE SENSOR
    67.
    发明申请
    IMAGE SENSOR FOR SIMULTANEOUSLY OBTAINING COLOR IMAGE AND DEPTH IMAGE, METHOD OF OPERATING THE IMAGE SENSOR, AND IMAGE PROCESSING SYTEM INCLUDING THE IMAGE SENSOR 有权
    用于同时获得彩色图像和深度图像的图像传感器，操作图像传感器的方法和包括图像传感器的图像处理项目

    公开(公告)号：US20120133737A1

    公开(公告)日：2012-05-31

    申请号：US13237276

    申请日：2011-09-20

    申请人： Dong-ki Min ,  Young-gu Jin

    发明人： Dong-ki Min ,  Young-gu Jin

    IPC分类号： H04N13/02

    CPC分类号： H04N13/207 ,  H04N13/254 ,  H04N13/257 ,  H04N13/271

    摘要： An image sensor includes a light source that emits modulated light such as visible light, white light, or white light-emitting diode (LED) light to a target object, a plurality of pixels, and an image processing unit. The pixels include at least one pixel for outputting pixel signals according to light reflected by the target object. The image processing unit simultaneously generates a color image and a depth image from the pixel signals of the at least one pixel.

    摘要翻译： 图像传感器包括向目标物体，多个像素和图像处理单元发射诸如可见光，白光或白色发光二极管（LED）的调制光的光源。 像素包括至少一个像素，用于根据由目标对象反射的光来输出像素信号。 图像处理单元从至少一个像素的像素信号同时生成彩色图像和深度图像。

    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    68.
    发明授权
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US08119480B2

    公开(公告)日：2012-02-21

    申请号：US12923593

    申请日：2010-09-29

    申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC分类号： H01L21/336

    CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    DEPTH SENSOR, DEPTH ESTIMATION METHOD USING THE SAME, AND DEPTH ESTIMATION DEVICE INCLUDING THE SAME
    70.
    发明申请
    DEPTH SENSOR, DEPTH ESTIMATION METHOD USING THE SAME, AND DEPTH ESTIMATION DEVICE INCLUDING THE SAME 有权
    深度传感器，使用该深度传感器的深度估计方法和包括其的深度估计设备

    公开(公告)号：US20110202310A1

    公开(公告)日：2011-08-18

    申请号：US13025793

    申请日：2011-02-11

    申请人： Dong Ki MIN ,  Young Gu JIN

    发明人： Dong Ki MIN ,  Young Gu JIN

    IPC分类号： G01B11/22 ,  G06F15/00

    CPC分类号： G01S17/10

    摘要： A depth estimation apparatus and method are provided. The depth estimation method includes grouping a plurality of frame signals generated by a depth pixel into a plurality of frame signal groups which are used to estimate a depth to an object without a depth estimation error caused by an omission of a frame signal, the grouping of the a plurality of frame signals based on whether an omitted frame signal exists in the plurality of frame signals and based on a continuous pattern of the plurality of frame signals; and estimating the depth to the object using each of the plurality of frame signal groups.

    摘要翻译： 提供了深度估计装置和方法。 深度估计方法包括将由深度像素生成的多个帧信号分组成多个帧信号组，所述多个帧信号组用于估计对象的深度而没有由于丢失帧信号而导致的深度估计误差， 基于所述多个帧信号中是否存在省略的帧信号，并且基于所述多个帧信号的连续模式，所述多个帧信号; 以及使用所述多个帧信号组中的每一个估计到所述对象的深度。