公开(公告)号：US09079269B2

公开(公告)日：2015-07-14

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00 ,  H01L21/304 ,  B23K26/06 ,  B23K26/36 ,  B23K26/40

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

摘要翻译： 可以使用激光烧蚀在至少基底衬底顶部的应力层的至少一层覆盖层内形成沟槽。 应力层的非烧蚀部分具有限定要剥离的材料层区域的边缘的边缘。 激光烧蚀还可用于在包括至少镀覆种子层的覆盖材料堆叠内形成沟槽。 在材料堆叠的非烧蚀部分上形成应力层，应力层的一部分具有限定要剥离的材料层区域的边缘的边缘。 可以进一步使用激光烧蚀来形成延伸穿过覆盖应力层并进入基底本身的沟槽。 沟槽具有限定要剥离的材料层区域的边缘的边缘。

公开(公告)号：US08936961B2

公开(公告)日：2015-01-20

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US08878055B2

公开(公告)日：2014-11-04

申请号：US12852991

申请日：2010-08-09

申请人： Keith E. Fogel ,  William S. Graham ,  Jeehwan Kim ,  Harold J. Hovel ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Keith E. Fogel ,  William S. Graham ,  Jeehwan Kim ,  Harold J. Hovel ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L31/00 ,  H01L31/052 ,  H01L31/0236 ,  H01L31/0352

CPC分类号： H01L31/0527 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.

摘要翻译： 光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。 连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。 光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130269860A1

公开(公告)日：2013-10-17

申请号：US13448939

申请日：2012-04-17

申请人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： B32B38/00 ,  B05D3/02

CPC分类号： B32B38/10 ,  B32B2457/14 ,  H01L21/02002 ,  H01L21/304 ,  H01L21/6836 ,  H01L31/1892 ,  Y02E10/50

摘要： A stressor layer is formed atop a base substrate at a first temperature which induces a first tensile stress in the base substrate that is below a fracture toughness of base substrate. The base substrate and the stressor layer are then brought to a second temperature which is less than the first temperature. The second temperature induces a second tensile stress in the stressor layer which is greater than the first tensile stress and which is sufficient to allow for spalling mode fracture to occur within the base substrate. The base substrate is spalled at the second temperature to form a spalled material layer. Spalling occurs at a fracture depth which is dependent upon the fracture toughness of the base substrate, stress level within the base substrate, and the second tensile stress of the stressor layer induced at the second temperature.

摘要翻译： 在第一温度下在基底顶部形成应力层，该第一温度在基础基板中引起低于基底基板的断裂韧性的第一拉伸应力。 然后使基底和应力层达到小于第一温度的第二温度。 第二温度在应力层中引起第二拉伸应力，其大于第一拉伸应力，并且其足以允许在基底基底内发生剥落模式断裂。 基底基板在第二温度下剥离以形成剥离的材料层。 剥离发生在取决于基底的断裂韧性，基底衬底内的应力水平以及在第二温度下引起的应力层的第二拉伸应力的断裂深度。

公开(公告)号：US08415772B2

公开(公告)日：2013-04-09

申请号：US13570989

申请日：2012-08-09

申请人： Joel P. de Souza ,  Keith E. Fogel ,  Edward W. Kiewra ,  Steven J. Koester ,  Christopher C. Parks ,  Devendra K. Sadana ,  Shahab Siddiqui

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Edward W. Kiewra ,  Steven J. Koester ,  Christopher C. Parks ,  Devendra K. Sadana ,  Shahab Siddiqui

IPC分类号： H01L23/58

CPC分类号： H01L21/28264 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.

摘要翻译： 提供了防止III-V族化合物半导体的表面分解的方法。 该方法包括在III-V族化合物半导体的表面上形成厚度为从至400的硅膜。 在III-V族化合物半导体的表面上形成硅膜之后，可以在封盖/钝化的III-V化合物半导体上形成包括例如MOSFET的高性能半导体器件。 在MOSFET制造期间，可以在封盖/钝化的III-V化合物半导体上形成高k电介质，此后可以将激活的源极和漏极区域形成为III-V族化合物半导体。

公开(公告)号：US20130025659A1

公开(公告)日：2013-01-31

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

公开(公告)号：US20120322227A1

公开(公告)日：2012-12-20

申请号：US13159893

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L31/1896 ,  Y02E10/50 ,  Y02P80/30

摘要： A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

摘要翻译： 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层，以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部，然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后，从基底基板的剥离部的顶部除去应力层。

公开(公告)号：US20120309153A1

公开(公告)日：2012-12-06

申请号：US13570980

申请日：2012-08-09

申请人： Joel P. de Souza ,  Keith E. Fogel ,  Edward W. Kiewra ,  Steven J. Koester ,  Christopher C. Parks ,  Devendra K. Sadana ,  Shahab Siddiqui

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Edward W. Kiewra ,  Steven J. Koester ,  Christopher C. Parks ,  Devendra K. Sadana ,  Shahab Siddiqui

IPC分类号： H01L21/336

CPC分类号： H01L21/28264 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.