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    SURFACE CLEANING WITH DIRECTED HIGH PRESSURE CHEMISTRY
    63.
    发明公开
    SURFACE CLEANING WITH DIRECTED HIGH PRESSURE CHEMISTRY 审中-公开

    公开(公告)号：US20230178388A1

    公开(公告)日：2023-06-08

    申请号：US17541540

    申请日：2021-12-03

    Applicant: Applied Materials, Inc.

    Inventor： Brian K. Kirkpatrick ,  Ekaterina A. Mikhaylichenko ,  Brian J. Brown

    IPC: H01L21/67 ,  B08B3/02

    CPC classification number: H01L21/67051 ,  B08B3/024 ,  H01L21/30625

    Abstract: Cleaning chambers may include a substrate support having a substrate seating position. The cleaning chambers may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a leading edge and a trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled relative to the substrate seating position of the substrate support to produce an interior angle of greater than or about 90° at an intersection location across the substrate seating position for a fluid delivered from each fluid nozzle at the leading edge of the fluid port.

    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION
    65.
    发明申请
    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION 有权

    公开(公告)号：US20220283554A1

    公开(公告)日：2022-09-08

    申请号：US17681673

    申请日：2022-02-25

    Applicant: Applied Materials, Inc.

    Inventor： Eric Lau ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu ,  Benjamin Cherian ,  Brian J. Brown ,  Thomas H. Osterheld

    IPC: G05B13/04 ,  B24B49/00 ,  B24B49/12 ,  B24B49/16 ,  B24B37/005

    Abstract: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

    CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL
    66.
    发明申请
    CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL 有权

    公开(公告)号：US20220234163A1

    公开(公告)日：2022-07-28

    申请号：US17716941

    申请日：2022-04-08

    Applicant: Applied Materials, Inc.

    Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  PrIscilla Diep

    IPC: B24B37/005 ,  H01L21/321 ,  H01L21/306

    Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

    CLEANING SYSTEM WITH IN-LINE SPM PROCESSING
    67.
    发明申请
    CLEANING SYSTEM WITH IN-LINE SPM PROCESSING 有权

    公开(公告)号：US20210407825A1

    公开(公告)日：2021-12-30

    申请号：US17346116

    申请日：2021-06-11

    Applicant: Applied Materials, Inc.

    Inventor： Brian J. Brown ,  Ekaterina A. Mikhaylichenko ,  Brian K. Kirkpatrick

    IPC: H01L21/67 ,  B08B3/08 ,  B08B1/00 ,  B08B3/12 ,  B08B3/02 ,  B08B1/04 ,  B08B13/00 ,  B08B7/04 ,  B65G47/90 ,  H01L21/687

    Abstract: A cleaning system for processing a substrate after polishing includes a sulfuric peroxide mix (SPM) module, at least two cleaning elements, and a plurality of robots. The SPM module includes a sulfuric peroxide mix (SPM) cleaner having a first container to hold a sulfuric peroxide mix liquid and five to twenty first supports to hold five to twenty substrates in the liquid in the first container, and a rinsing station having a second container to hold a rinsing liquid and five to twenty second supports to hold five to twenty substrates in the liquid in the second container. Each of the at least two cleaning elements are configured to process a single substrate at a time. Examples of a cleaning element include a megasonic cleaner, a rotating brush cleaner, a buff pad cleaner, a jet spray cleaner, a chemical spin cleaner, a spin drier, and a marangoni drier.

    SPM PROCESSING OF SUBSTRATES
    68.
    发明申请
    SPM PROCESSING OF SUBSTRATES 有权

    公开(公告)号：US20210407824A1

    公开(公告)日：2021-12-30

    申请号：US17346108

    申请日：2021-06-11

    Applicant: Applied Materials, Inc.

    Inventor： Brian J. Brown ,  Ekaterina A. Mikhaylichenko

    IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08 ,  B08B13/00 ,  B08B3/04 ,  B08B3/14 ,  B08B3/02 ,  B08B7/04 ,  B65G47/90

    Abstract: A substrate cleaning system to remove particulates from multiple substrates includes a first container for applying a cleaning liquid to substrates, a second container for applying a rinsing liquid to substrates, and a robot system. The first container includes at least two openable and closable access ports in a top of the first container and a plurality of supports to hold the substrates at respective edges in the first container. The second container has a plurality of supports to hold the substrates at respective edges in the second container. The robot system transports substrates through the at least two openable and closable access ports in the top of the first container, and transports substrates through a top of the second container.

    WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD
    69.
    发明申请
    WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD 有权

    公开(公告)号：US20210154796A1

    公开(公告)日：2021-05-27

    申请号：US16953139

    申请日：2020-11-19

    Applicant: Applied Materials, Inc.

    Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  PrIscilla Diep

    IPC: B24B37/26 ,  B24B37/27 ,  B24B37/04 ,  B24B37/005

    Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

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